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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR812TRPBF

Name: IRFR812TRPBF
Brand: Infineon Technologies
SKU: IRFR812TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR812TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR812TRPBF.pdf

Description:: MOSFET N-CH 500V 3.6A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:2,525

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Product details

Overview

IRFR812TRPBF from Infineon Technologies (formerly International Rectifier) is a 500V, 3.6A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, featuring 1.85Ω R_DS(on) at V_GS = 10V, 75ns reverse recovery time, and integrated body diode optimized for flyback and snubberless AC-DC power supplies.

For engineers reviewing the IRFR812TRPBF datasheet, IRFR812TRPBF pinout, IRFR812TRPBF application, or IRFR812TRPBF equivalent, key selection criteria include breakdown voltage margin, unclamped inductive switching capability (E_AS = 400mJ), thermal resistance (R_θJC = 1.8°C/W), and gate charge profile (Q_g = 20nC) for hard-switched SMPS designs.

Technical Context

This HEXFET device uses planar vertical DMOS structure with optimized doping profile to achieve stable 500V V_(BR)DSS and low temperature coefficient (0.37V/°C). Its body diode exhibits 1.2V forward drop at 3.6A and 75ns t_rr at 25°C, enabling efficient discontinuous conduction mode operation.

Dynamic parameters are characterized at V_DS = 400V with Q_gd/Q_gs ratio of ~0.97, indicating strong Miller effect control; C_oss drops from 47pF at 1V to 16pF at 400V, supporting high-voltage resonant transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	500V - Withstands full mains-referenced DC bus in 230VAC systems with 20% derating margin
R_DS(on) typ.	1.85Ω @ V_GS = 10V - Enables <1.2W conduction loss at 3.6A continuous drain current
t_rr typ.	75ns @ T_J = 25°C - Limits switching loss during diode commutation in flyback snubberless topologies
Q_g	20nC - Requires ≤1W gate driver dissipation at 100kHz with 10V swing and 5Ω source impedance
E_AS	400mJ - Supports single-pulse unclamped inductive energy handling up to 1.8A at 250V
R_θJC	1.8°C/W - Delivers 78W P_D at T_C = 25°C with minimal heatsink requirement
dv/dt rating	32V/ns - Resists false turn-on in high-noise industrial motor drive gate loops

Pinout & Package

IRFR812TRPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal enhancement and mechanical stability on PCBs. The package meets JEDEC MO-238 standard and supports lead-free reflow soldering per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Connected to ground plane; carries full load current and body diode reverse recovery charge
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <100nA leakage; sensitive to ESD and requires RC snubbing in high-dv/dt environments
Pin 3 (Drain)	Main power output node	Exposed copper pad tied to internal die drain; primary thermal path to PCB copper area

Key Features

Feature	Design Value
Enhancement-mode operation	Guarantees normally-off behavior with V_GS(th) = 3.0–5.0V, eliminating need for active pull-down in standby
Low gate charge asymmetry	Q_gd/Q_gs ≈ 0.97 enables predictable Miller plateau timing for precise dead-time control
High avalanche ruggedness	Rated for repetitive unclamped inductive switching up to I_AR = 3.6A without degradation
Thermally robust construction	1.8°C/W junction-to-case resistance allows direct mounting to 1"² FR-4 copper without external heatsink
Lead-free qualified	Meets consumer-level RoHS requirements with Pb-free terminations and halogen-free molding compound

Applications

AC-DC Adapter

Flyback SMPS

Use Scenario: 24W universal-input offline adapter powering IoT gateways.

IC Role / Device Role / Timing Role: Primary-side switch operating in DCM at 65kHz with ZVS-assisted turn-on.

Use Value: 75ns t_rr reduces diode recovery loss by 35% vs. legacy 200ns devices, improving efficiency by 0.8% at full load.

Use Scenario: 36W medical-grade isolated power supply meeting IEC 60601 creepage requirements.

IC Role / Device Role / Timing Role: Main power switch in transformer-isolated flyback with snubberless layout.

Use Value: 500V V_(BR)DSS provides 100% margin over 400V DC bus, eliminating need for external clamping components.

LED Driver

Industrial Control PSU

Use Scenario: Constant-current LED driver for street lighting with 0–10V dimming interface.

IC Role / Device Role / Timing Role: High-side switch controlling buck-derived current regulation stage.

Use Value: 1.85Ω R_DS(on) limits conduction loss to <0.25W at 350mA output, enabling passive cooling in sealed enclosures.

Use Scenario: Auxiliary 12V/2A supply for PLC I/O modules in factory automation cabinets.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement in forward converter.

Use Value: Body diode V_SD = 1.2V at 3.6A enables >92% efficiency at light loads where synchronous FETs are inactive.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500V, 4.5A, R_DS(on) = 1.4Ω, t_rr = 120ns, TO-220FP package	Higher current rating but slower diode recovery; requires heatsink due to higher R_θJA	Preferred when board space permits through-hole mounting and higher peak current is needed
FQP5N50CTU	500V, 4.5A, R_DS(on) = 1.4Ω, t_rr = 100ns, TO-220 package	Same voltage/current specs but lacks lead-free qualification and has no avalanche rating	Acceptable for cost-sensitive non-medical/non-industrial applications with controlled thermal environment

Compared with STP5NK50ZFP and FQP5N50CTU, IRFR812TRPBF offers superior thermal performance in surface-mount form factor, certified avalanche capability for reliability-critical designs, and tighter t_rr tolerance-making it optimal for compact, high-efficiency flyback converters where PCB area and safety margins are constrained.

Availability

IRFR812TRPBF is available at Aetrix Electronics and suitable for AC-DC adapters, flyback SMPS, LED drivers, and industrial control PSUs requiring stable component supply across multi-year production cycles.

Supply support for IRFR812TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered for high-voltage switching in offline power conversion, emphasizing avalanche ruggedness, low gate charge, and thermally efficient packaging for space-constrained applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR812TRPBF supports 2.3A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package and must be validated against actual PCB copper area and ambient airflow in the final layout.

Does this MOSFET require a gate resistor for reliable operation?

Yes-a gate resistor between 5Ω and 22Ω is recommended to dampen ringing caused by L_g–C_iss resonance and limit peak gate current during fast transitions. The 20nC total gate charge and 7.1nC Miller charge necessitate controlled slew rate to prevent shoot-through in half-bridge configurations.

Can IRFR812TRPBF replace IRFR820 in existing designs?

No-IRFR820 is rated for 500V but has R_DS(on) = 3.0Ω and lower I_D = 2.5A. Substituting IRFR812TRPBF improves conduction loss by 38% and increases current capability by 44%, but requires verification of gate drive strength and PCB thermal relief due to higher power density.

Is the body diode suitable for freewheeling in synchronous rectification?

The body diode is not optimized for synchronous rectification due to its 1.2V forward drop and 75ns recovery time. It functions reliably in flyback snubberless operation and clamp circuits, but dedicated low-V_F Schottky or MOSFET synchronous rectifiers are preferred for >90% efficiency targets.

IRFR812TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.2Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR812TRPBF FAQ

1.How can I place an order for IRFR812TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR812TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR812TRPBF reliable?

The price and inventory of IRFR812TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR812TRPBF is usually 5 days.

3.What payment methods are accepted for IRFR812TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR812TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR812TRPBF?

IRFR812TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR812TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR812TRPBF?

For technical support, including IRFR812TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR812TRPBF requirements.

6.How does Aetrix verify that IRFR812TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR812TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR812TRPBF meets industry standards.

7.What is the process for return or replacement of IRFR812TRPBF?

All IRFR812TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR812TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR812TRPBF part is unused and in its original packaging.

Return procedure for IRFR812TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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