My Inquiry
My Account
Infineon Technologies IRFR9024NTRR
- Part No.:
- IRFR9024NTRR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9024NTRR.pdf
- Description:
- MOSFET P-CH 55V 11A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,339
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFR9024NTRR from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TO-252AA (D-Pak) surface-mount package, rated for -55 V V(BR)DSS, 0.175 Ω RDS(on) at VGS = -10 V and ID = -6.6 A, with -11 A continuous drain current at TC = 25°C. It features ultra-low on-resistance, fast switching, full avalanche rating, and is optimized for DC-DC converters, load switches, and reverse polarity protection circuits.
For engineers reviewing the IRFR9024NTRR datasheet, IRFR9024NTRR pinout, IRFR9024NTRR application, or IRFR9024NTRR equivalent, key selection criteria include its P-channel configuration, D-Pak thermal performance (RθJC = 3.3 °C/W), body diode recovery characteristics (trr = 47–71 ns), and gate charge profile (Qg = 19 nC) for high-efficiency synchronous rectification and hot-swap designs.
Technical Context
This device operates as a voltage-controlled unidirectional power switch with integrated body diode, designed for low-side switching in negative-rail configurations. Its P-channel topology eliminates external level-shifting circuitry in high-side switch applications when used with bootstrap or charge-pump gate drivers.
The fifth-generation HEXFET process delivers stable RDS(on) over temperature (±0.05 V/°C V(BR)DSS tempco), supports repetitive avalanche energy up to 3.8 mJ, and maintains safe operating area integrity up to 10 ms pulses at -55 V and -11 A under derated conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -55 V - Maximum blocking voltage before avalanche onset; defines maximum input rail for reverse polarity protection. |
| RDS(on) | 0.175 Ω @ VGS = -10 V, ID = -6.6 A - Enables <1.2 W conduction loss at 7.2 A, critical for thermally constrained PCB layouts. |
| ID (TC = 25°C) | -11 A - Continuous drain current capability with heatsink-free operation on 1"² FR-4 PCB. |
| Qg / Qgd | 19 nC / 10 nC - Miller charge dominates turn-off; dictates gate driver peak current requirement (>1 A for <100 ns switching). |
| trr / Qrr | 47–71 ns / 84–130 nC - Fast body diode recovery enables use in synchronous buck topologies without cross-conduction risk. |
| RθJC | 3.3 °C/W - Junction-to-case thermal resistance enables direct thermal pad mounting to copper pour or heatsink for >30 W dissipation. |
Pinout & Package
IRFR9024NTRR uses the TO-252AA (D-Pak) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 6.73 × 6.35 mm with 1.27 mm lead pitch and conforms to JEDEC outline standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Accepts -10 V to -20 V drive for full enhancement; threshold range -2.0 to -4.0 V enables compatibility with 3.3 V logic via level shifters. |
| 2 (Drain) | Main current path anode | Internally connected to exposed metal tab; must be soldered to large copper area for thermal management and low-inductance return path. |
| 3 (Source) | Main current path cathode | Reference node for gate drive; connects to system ground or negative rail; carries full load current and body diode reverse recovery charge. |
| 4 (Drain) | Secondary drain terminal | Electrically redundant with Pin 2; provides mechanical stability and additional thermal conduction path to PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | Single-pulse EAS = 62 mJ at TJ = 25°C - withstands unclamped inductive switching events without failure in motor drive or relay control. |
| Ultra-low RDS(on) | 0.175 Ω at -10 V gate drive - reduces I²R losses by >30% vs. legacy P-channel MOSFETs in 12 V automotive load switches. |
| Fast body diode recovery | trr = 47–71 ns, dv/dt = -10 V/ns - minimizes shoot-through risk and EMI in bidirectional power flow applications like USB PD reverse charging. |
| Surface-mount D-Pak | TO-252AA footprint with exposed drain pad - supports automated reflow assembly and achieves 3.3 °C/W junction-to-case thermal resistance without added heatsinks. |
Applications
| Automotive Reverse Polarity Protection | Industrial DC-DC Load Switch |
|---|---|
Use Scenario: Protecting infotainment ECUs from battery misconnection in 12 V vehicle systems. IC Role / Device Role / Timing Role: P-channel high-side switch controlling main power rail entry; activated only during correct polarity insertion. Use Value: Eliminates need for series Schottky diode, reducing voltage drop from 0.4 V to <0.1 V at 5 A and enabling full 12 V delivery to sensitive electronics. | Use Scenario: Enabling/disabling 24 V auxiliary power rails in PLC backplanes with controlled inrush. IC Role / Device Role / Timing Role: Low-side load switch managing power sequencing; driven by microcontroller GPIO with RC gate network. Use Value: Achieves <10 µs turn-on delay and <40 ns fall time, supporting precise timing-critical power-up sequences across multi-rail industrial modules. |
| Hot-Swap Controller Interface | Synchronous Buck Converter High-Side Switch |
Use Scenario: Current-limiting and fault isolation in modular server power supplies during live board insertion. IC Role / Device Role / Timing Role: Main pass element in discrete hot-swap circuit; monitored via source resistor for overcurrent shutdown. Use Value: Avalanche rating ensures survival during sudden short-circuit events on backplane; RDS(on) tolerance supports ±15% current sense accuracy over temperature. | Use Scenario: High-efficiency 48 V to 12 V step-down conversion in telecom rectifiers using synchronous rectification. IC Role / Device Role / Timing Role: Complementary P-channel switch paired with N-channel synchronous rectifier; driven by dedicated gate controller. Use Value: Body diode trr <71 ns prevents overlap conduction during dead-time, improving efficiency by 1.2% at 20 A output versus standard Schottky solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR9120TRPBF | V(BR)DSS = -100 V, RDS(on) = 0.27 Ω @ -10 V - higher voltage rating but +55% on-resistance | Better suited for 48 V industrial bus protection where breakdown margin is critical | Select when system max voltage exceeds 55 V; avoid if conduction loss dominates thermal budget. |
| DMG2305UVT-7 | V(BR)DSS = -20 V, RDS(on) = 0.045 Ω @ -4.5 V - logic-level compatible, lower voltage, much lower RDS(on) | Optimized for 3.3 V/5 V portable electronics; insufficient for 12 V+ reverse polarity protection | Choose only for sub-10 V rails with tight gate drive constraints; not drop-in for IRFR9024NTRR's -55 V use cases. |
Compared with IRFR9120TRPBF and DMG2305UVT-7, IRFR9024NTRR uniquely balances -55 V blocking, 0.175 Ω on-resistance, and D-Pak thermal performance-making it optimal for cost-sensitive 12–24 V automotive and industrial load switching where both voltage margin and conduction loss matter.
Availability
IRFR9024NTRR is available at Aetrix Electronics and suitable for automotive reverse polarity protection, industrial DC-DC load switching, and hot-swap controller interface applications requiring stable component supply and long-term manufacturing continuity.
Supply support for IRFR9024NTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The HEXFET® Power MOSFET product line was developed to deliver rugged, high-current switching performance in compact packages for automotive, industrial, and computing power systems-emphasizing avalanche robustness, low RDS(on), and fast switching.
FAQ
What is the maximum continuous drain current for IRFR9024NTRR at 100°C case temperature?
The maximum continuous drain current is -8 A at TC = 100°C and VGS = -10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel conductivity and increased RDS(on) at elevated temperatures, requiring careful PCB copper area design to maintain safe junction temperature.
Can IRFR9024NTRR be driven directly from a 3.3 V microcontroller GPIO?
No-its gate threshold voltage range is -2.0 V to -4.0 V, and full enhancement requires -10 V for specified RDS(on). Driving from 3.3 V will yield high RDS(on) (>1 Ω), excessive heating, and unreliable switching. A gate driver or level shifter is mandatory for logic-level control.
Is the body diode in IRFR9024NTRR suitable for reverse recovery in synchronous rectification?
Yes-the body diode has characterized reverse recovery time (trr = 47–71 ns) and charge (Qrr = 84–130 nC), making it usable in synchronous buck high-side roles when paired with appropriate dead-time control. However, its VSD = -1.6 V at -7.2 A indicates higher forward drop than discrete Schottky diodes.
What is the recommended PCB footprint and soldering method for TO-252AA package?
Per Application Note AN-994, use a minimum 1"² copper pour connected to the drain pad via multiple thermal vias. Vapor phase or infrared reflow is preferred; wave soldering is acceptable with proper stencil design. Soldering temperature must not exceed 300°C for 10 seconds within 1.6 mm of the case edge.
IRFR9024NTRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 175mOhm @ 6.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 38W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR9024NTRR FAQ
1.How can I place an order for IRFR9024NTRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9024NTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9024NTRR reliable?
The price and inventory of IRFR9024NTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9024NTRR is usually 5 days.
3.What payment methods are accepted for IRFR9024NTRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9024NTRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9024NTRR?
IRFR9024NTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9024NTRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9024NTRR?
For technical support, including IRFR9024NTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9024NTRR requirements.
6.How does Aetrix verify that IRFR9024NTRR is sourced from the original manufacturer or authorized distributors?
All IRFR9024NTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9024NTRR meets industry standards.
7.What is the process for return or replacement of IRFR9024NTRR?
All IRFR9024NTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9024NTRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9024NTRR part is unused and in its original packaging.
Return procedure for IRFR9024NTRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFR9024NTRR Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
