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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR9024NTRRPBF

Name: IRFR9024NTRRPBF
Brand: Infineon Technologies
SKU: IRFR9024NTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9024NTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9024NTRRPBF.pdf

Description:: MOSFET P-CH 55V 11A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR9024NTRRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET in DPAK package, rated for -55 V V_DS, -11 A I_D (T_C = 25°C), R_DS(on) ≤ 0.23 Ω at V_GS = −10 V, and featuring integrated body diode with t_rr = 85 ns. It serves as a high-side load switch in DC-DC converters and motor control H-bridge legs.

For engineers reviewing the IRFR9024NTRRPBF datasheet, IRFR9024NTRRPBF pinout, IRFR9024NTRRPBF application, or IRFR9024NTRRPBF equivalent, key selection criteria include verified R_DS(on) at −10 V gate drive, body diode reverse recovery performance, SOA compliance under pulsed inductive loads, and lead-free DPAK thermal profile compatibility.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for low gate charge (Q_g = 27 nC) and fast switching (t_f = 25 ns). Its threshold voltage V_GS(th) ranges from −2.0 V to −4.0 V, enabling robust turn-on with standard logic-level gate drivers.

The device supports repetitive avalanche energy rating E_AS = 115 mJ and exhibits guaranteed unclamped inductive switching (UIS) capability. Its SOA curve is specified up to T_C = 100°C with pulse width ≤ 10 ms.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−55 V - Maximum drain-to-source blocking voltage in reverse bias; defines safe operating ceiling in high-side switch configurations.
I_D (T_C = 25°C)	−11 A - Continuous DC current capability at case temperature 25°C; derates to −7.2 A at 100°C.
R_DS(on) @ V_GS = −10 V	≤ 0.23 Ω - On-resistance directly impacts conduction loss and junction temperature rise in power stages.
Q_g	27 nC - Total gate charge determines required driver current and switching transition time.
t_rr	85 ns - Body diode reverse recovery time; critical for minimizing shoot-through risk and EMI in bridge topologies.
E_AS	115 mJ - Single-pulse avalanche energy rating; enables reliable operation under transient overvoltage conditions.

Pinout & Package

DPAK (TO-252AA) surface-mount package with exposed drain pad for enhanced thermal dissipation. Standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Receives negative gate drive relative to source to turn on P-channel channel; requires −10 V for full enhancement.
Drain (D)	High-side power output	Connected to input rail in high-side switch; tab is electrically tied to drain and serves as primary thermal path.
Source (S)	Reference node	Biased at load-side potential; defines gate drive reference and carries full load current back to ground or return path.

Key Features

Feature	Design Value
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 reflow profile for Pb-free soldering; no lead contamination in assembly process.
Fast body diode recovery	t_rr = 85 ns enables use in synchronous rectification and bidirectional current paths without external diode.
Low gate charge	Q_g = 27 nC reduces driver power loss and allows use with low-current gate drivers like microcontroller GPIOs.
Repetitive avalanche rated	E_AS = 115 mJ ensures survivability during inductive switching transients without external snubbers.

Applications

DC-DC Buck Converter High-Side Switch

H-Bridge Motor Driver (Upper Leg)

Use Scenario: Used as upper switch in non-synchronous buck regulator feeding 3.3 V/5 V logic rails from 12 V input.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch; turns on/off at 200–500 kHz PWM frequency.

Use Value: Low R_DS(on) minimizes conduction loss; fast t_rr prevents cross-conduction during dead-time transitions.

Use Scenario: Upper quadrant switch in brushed DC motor driver controlling forward/reverse direction.

IC Role / Device Role / Timing Role: High-side P-MOSFET in half-bridge leg; commutated with complementary N-MOSFET at ≤20 kHz.

Use Value: Integrated body diode handles freewheeling current during off-state; avalanche rating absorbs inductive kickback.

LED Constant-Current Driver

Hot-Swap Controller (Primary Switch)

Use Scenario: Series pass element regulating current through high-brightness LED strings in automotive lighting.

IC Role / Device Role / Timing Role: Linear-mode controlled switch dissipating variable power based on feedback loop error signal.

Use Value: SOA curve validated for 10 ms pulses enables stable linear operation without thermal runaway.

Use Scenario: Inrush-limiting switch in 12 V board-level hot-swap module protecting backplane from capacitive loading.

IC Role / Device Role / Timing Role: High-side power switch turned on gradually via gate resistor to limit dV/dt and peak inrush current.

Use Value: Guaranteed UIS performance withstands repeated connection/disconnection events without degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET high-side switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9024NTRPBF	Same die, identical R_DS(on), Q_g, and t_rr; differs only in RoHS marking (no "P" suffix in part number).	No functional difference; legacy variant without explicit lead-free designation.	Select when RoHS documentation not required or legacy BOM alignment needed.
STP9PF55	Higher R_DS(on) (0.55 Ω), lower I_D (−9 A), slower t_rr (120 ns); TO-220 package.	Requires heatsink due to larger package and higher conduction loss; unsuitable for compact DPAK layouts.	Choose only if TO-220 mounting is mandatory and thermal budget permits higher losses.

Compared with IRFR9024NTRPBF, the base variant offers identical electrical performance but lacks formal lead-free certification; STP9PF55 trades efficiency and footprint for legacy package availability and lower cost in non-density-constrained designs.

Availability

IRFR9024NTRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor control modules, and LED drivers requiring stable component supply across industrial and automotive production cycles.

Supply support for IRFR9024NTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and maintains its power MOSFET product lines with full technical documentation and qualification.

This device belongs to the HEXFET® P-channel family, engineered for high-efficiency, high-reliability switching in medium-power DC applications where high-side control and fast recovery are essential.

FAQ

What is the maximum allowable gate-source voltage for IRFR9024NTRRPBF?

The absolute maximum V_GS is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For reliable enhancement, −10 V is recommended; −5 V yields partial turn-on with elevated R_DS(on) (~0.45 Ω).

Can IRFR9024NTRRPBF be used in synchronous rectification?

No - it is a P-channel MOSFET intended for high-side switching, not low-side synchronous rectification. Its body diode forward drop (V_SD ≈ −1.2 V) and recovery characteristics are not optimized for reverse conduction timing in buck output stages.

Is the drain tab electrically isolated from other pins?

No - the exposed drain pad (Pin 2) is internally connected to the drain terminal. PCB layout must isolate this pad from all other copper except dedicated drain traces and thermal vias to ground planes.

Does IRFR9024NTRRPBF require a gate resistor in switching applications?

Yes - a series gate resistor (typically 10–47 Ω) is required to dampen ringing, limit peak gate current, and control dV/dt. Omitting it risks oscillation, EMI, and accelerated gate oxide wear during fast transitions.

IRFR9024NTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 175mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 38W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR9024NTRRPBF FAQ

1.How can I place an order for IRFR9024NTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9024NTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9024NTRRPBF reliable?

The price and inventory of IRFR9024NTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9024NTRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR9024NTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9024NTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9024NTRRPBF?

IRFR9024NTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9024NTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9024NTRRPBF?

For technical support, including IRFR9024NTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9024NTRRPBF requirements.

6.How does Aetrix verify that IRFR9024NTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR9024NTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9024NTRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR9024NTRRPBF?

All IRFR9024NTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9024NTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9024NTRRPBF part is unused and in its original packaging.

Return procedure for IRFR9024NTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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