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Infineon Technologies IRFR9120NTRL
- Part No.:
- IRFR9120NTRL
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9120NTRL.pdf
- Description:
- MOSFET P-CH 100V 6.6A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,715
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Product details
Overview
IRFR9120NTRL from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TO-252AA (D-Pak) surface-mount package, rated for -100V VDS, 0.48Ω RDS(on) at VGS = -10V, and -6.6A continuous drain current at TC = 25°C. It features fully avalanche-rated operation, fast switching (tr = 47ns, tf = 31ns), and integrated body diode with 100ns reverse recovery time - used in DC-DC synchronous rectification and high-side load switching.
For engineers reviewing the IRFR9120NTRL datasheet, IRFR9120NTRL pinout, IRFR9120NTRL application, or IRFR9120NTRL equivalent, key selection criteria include verified P-channel logic-level compatibility, thermal resistance (RθJC = 3.1°C/W), gate charge (Qg = 27nC), avalanche energy rating (EAS = 100mJ), and D-Pak mounting suitability for automated PCB assembly.
Technical Context
This device employs fifth-generation HEXFET processing to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its P-channel architecture enables high-side switching without level-shifting circuitry, and its gate threshold voltage range (-2.0V to -4.0V) supports direct microcontroller drive under nominal -5V or -12V rail conditions.
The integrated body diode exhibits VSD = -1.6V at IS = -3.9A and TJ = 25°C, with controlled dv/dt immunity (-5.0V/ns peak) and Qrr = 420–630nC, making it suitable for hard-switched flyback and buck converters where reverse recovery behavior impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100V - supports high-side switching in 48V industrial bus and telecom power systems |
| RDS(on) | 0.48Ω max @ VGS = -10V - enables <1.5W conduction loss at -3.9A, critical for thermally constrained SMT layouts |
| ID (continuous) | -6.6A @ TC = 25°C - defines maximum steady-state current before derating begins at 0.32W/°C |
| EAS | 100mJ single-pulse - ensures reliability during unclamped inductive turn-off events in motor drives and solenoid controls |
| Qg | 27nC - determines gate driver power requirement and switching speed trade-off in PWM applications |
| tr/tf | 47ns/31ns - enables >200kHz switching in isolated DC-DC converters with low switching loss |
| RθJC | 3.1°C/W - allows direct heatsinking via PCB copper pour or clip-mount for thermal management |
Pinout & Package
Package: TO-252AA (D-Pak), surface-mount, 3-lead configuration with exposed drain pad for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Accepts negative VGS to modulate channel; requires ≤±20V absolute rating and 27nC total charge for full turn-on |
| 2 (Drain) | Main current path (high-side) | Connected to exposed metal tab - must be routed to high-voltage node and thermally coupled to PCB ground plane |
| 3 (Source) | Reference terminal | Serves as return path for load current and gate drive reference; ties to system ground or floating rail |
| 4 (Drain, Tab) | Secondary drain connection | Electrically and thermally identical to Pin 2 - provides low-inductance, high-current path and heatsinking interface |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.48Ω enables <1.3W conduction loss at -4A, reducing thermal footprint in compact power modules |
| Fully avalanche-rated | 100mJ single-pulse EAS eliminates need for external snubbers in relay replacement and inductive load switching |
| Fast switching performance | 47ns rise / 31ns fall times support high-frequency SMPS designs up to 500kHz with minimal overlap loss |
| Surface-mount D-Pak | TO-252AA footprint allows automated placement and reflow soldering while delivering 40W power dissipation capability |
| Body diode with low Qrr | 420–630nC reverse recovery charge reduces diode-induced switching loss and EMI in synchronous rectifier topologies |
Applications
| Industrial Motor Control | Telecom DC-DC Conversion |
|---|---|
Use Scenario: High-side switch for 24–48V brushed DC motor direction control in PLC I/O modules. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side load switch, driven directly by microcontroller GPIO with -5V pull-down. Use Value: Eliminates need for high-side driver IC; RDS(on) ensures <1.2W loss at 3.5A, enabling convection-cooled PCB design. | Use Scenario: Synchronous rectifier in isolated 48V-to-12V flyback converter for base station power supplies. IC Role / Device Role / Timing Role: Secondary-side P-channel switch replacing Schottky diode to improve efficiency above 200kHz. Use Value: Qrr = 420nC and trr = 100ns minimize reverse recovery loss; VSD = -1.6V reduces forward drop vs. discrete diodes. |
| Automotive Body Electronics | Server PSU OR-ing |
Use Scenario: Reverse polarity protection and load switch for 12V infotainment power rails. IC Role / Device Role / Timing Role: P-channel MOSFET placed between battery and load, operating in linear mode during startup and saturated during run. Use Value: -100V VDS withstands load dump transients; EAS = 100mJ handles inductive kickback from connected sensors. | Use Scenario: OR-ing FET in redundant 12V server power supply backplane. IC Role / Device Role / Timing Role: High-side P-channel switch controlling power path from multiple PSUs to common bus. Use Value: Low RDS(on) minimizes voltage drop across FET; fast turn-off (tf = 31ns) prevents bus collapse during hot-swap events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR9024NTRL | VDS = -60V, RDS(on) = 0.27Ω, Qg = 22nC - lower voltage rating but lower on-resistance and gate charge | Better suited for 24V systems requiring higher efficiency at moderate currents; not rated for 48V+ bus transients | Select when operating voltage ≤40V and gate drive strength is limited; verify avalanche margin for inductive loads |
| STP12PF06 | VDS = -60V, RDS(on) = 0.22Ω, TO-220 package - higher thermal mass but through-hole only, no SMT option | Preferred for prototyping or low-volume assemblies where manual soldering is acceptable and heatsink attachment is required | Choose for lab validation or legacy board redesigns needing mechanical robustness over automated assembly compatibility |
Compared with IRFR9120NTRL, IRFR9024NTRL offers lower conduction loss in 24V systems but sacrifices transient robustness, while STP12PF06 trades surface-mount flexibility for superior thermal handling in fixed installations - both require gate drive voltage adjustment and layout review for safe operation.
Availability
IRFR9120NTRL is available at Aetrix Electronics and suitable for industrial motor control, telecom DC-DC conversion, and automotive body electronics requiring stable component supply and long-term production continuity.
Supply support for IRFR9120NTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap solutions.
The HEXFET® Power MOSFET product line - including IRFR9120NTRL - was developed for high-efficiency, high-reliability power switching in industrial, telecom, and automotive applications demanding ruggedness, low RDS(on), and fast dynamic response.
FAQ
Is IRFR9120NTRL compatible with standard FR-4 PCB reflow profiles?
Yes. The TO-252AA package is qualified for vapor-phase, infrared, and wave soldering per JEDEC standards. Recommended footprint follows AN-994 guidelines: 1"² copper pour under the drain tab, 0.25mm solder mask opening, and thermal vias spaced ≤1.5mm apart. Peak temperature must not exceed 300°C for 10 seconds at 1.6mm from case edge.
What is the maximum safe operating frequency for IRFR9120NTRL in hard-switched applications?
Based on measured tr = 47ns and tf = 31ns, the device supports reliable operation up to 350kHz in hard-switched topologies with proper gate drive (≥±1A peak) and layout optimization. At 500kHz, switching losses increase significantly; thermal derating and gate resistor tuning (RG = 12Ω typical) are mandatory to maintain TJ ≤ 150°C.
Can IRFR9120NTRL be used as a synchronous rectifier in a 48V-to-5V buck converter?
Yes, but with constraints. Its -100V VDS and low Qrr suit secondary-side rectification, yet its -4.0V VGS(th) minimum requires active gate control - not self-driven. A dedicated gate driver referenced to the source is essential to ensure full enhancement and avoid shoot-through in multiphase designs.
Does IRFR9120NTRL require a gate resistor, and what value is recommended?
Yes. A series gate resistor (typically 10–22Ω) is required to damp ringing, limit peak gate current, and control dV/dt. With Qg = 27nC and typical ±12V drive, 12Ω yields ~100ns effective turn-on delay and suppresses oscillation observed on oscilloscope measurements using 10x probes. Lower values risk EMI; higher values increase switching loss.
IRFR9120NTRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 480mOhm @ 3.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 40W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR9120NTRL FAQ
1.How can I place an order for IRFR9120NTRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9120NTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9120NTRL reliable?
The price and inventory of IRFR9120NTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9120NTRL is usually 5 days.
3.What payment methods are accepted for IRFR9120NTRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9120NTRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9120NTRL?
IRFR9120NTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9120NTRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9120NTRL?
For technical support, including IRFR9120NTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9120NTRL requirements.
6.How does Aetrix verify that IRFR9120NTRL is sourced from the original manufacturer or authorized distributors?
All IRFR9120NTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9120NTRL meets industry standards.
7.What is the process for return or replacement of IRFR9120NTRL?
All IRFR9120NTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9120NTRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9120NTRL part is unused and in its original packaging.
Return procedure for IRFR9120NTRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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