Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRFR9120NTRR

Part No.:
IRFR9120NTRR
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR9120NTRR.pdf
Description:
MOSFET P-CH 100V 6.6A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,134

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFR9120NTRR from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TO-252AA (D-Pak) surface-mount package, rated for -100V VDS, 0.48Ω RDS(on) at VGS = -10V, and -6.6A continuous drain current at TC = 25°C. It features fully avalanche-rated operation, fast switching (tr = 47ns, tf = 31ns), and integrated body diode with VSD = -1.6V at -3.9A - used in DC-DC synchronous buck high-side switches and industrial motor control H-bridge legs.

For engineers reviewing the IRFR9120NTRR datasheet, IRFR9120NTRR pinout, IRFR9120NTRR application, or IRFR9120NTRR equivalent, key selection criteria include verified P-channel polarity, D-Pak thermal resistance (RθJC = 3.1°C/W), gate charge (Qg = 27nC), avalanche energy rating (EAS = 100mJ), and body diode reverse recovery performance (trr = 100–150ns).

Technical Context

This device implements fifth-generation HEXFET process technology to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its P-channel architecture enables high-side switching without level-shifting circuitry in low-voltage (<100V) power rails.

The TO-252AA package provides direct thermal path from junction to case (RθJC = 3.1°C/W) and supports PCB-mount vapor-phase or infrared reflow. The internal source/drain inductances (LS = 7.5nH, LD = 4.5nH) are characterized for accurate switching waveform modeling in hard-switched topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-100V - Maximum blocking voltage for high-side switch in 48V industrial systems
RDS(on)0.48Ω @ VGS = -10V - Enables <1.5W conduction loss at -3.9A, suitable for thermally constrained SMT layouts
ID (cont)-6.6A @ TC = 25°C - Continuous current capability with derating to -4.2A at 100°C case temperature
Qg27nC - Gate drive energy requirement determines minimum driver peak current (e.g., >1.35A for 20ns rise)
EAS100mJ - Single-pulse avalanche robustness allows safe operation under inductive load turn-off transients
tr/tf47ns/31ns - Fast edge rates support >100kHz PWM in SMPS while limiting switching loss
VSD-1.6V @ IS = -3.9A - Body diode forward drop impacts efficiency in synchronous rectification or freewheeling paths

Pinout & Package

TO-252AA (D-Pak) surface-mount package with exposed drain pad for thermal conduction and mechanical stability. Three leads: Gate (Lead 1), Drain (Leads 2 & 4), Source (Lead 3). Mounting requires FR-4 PCB with ≥1"² copper area for RθJA = 50°C/W performance.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control electrodeReceives negative VGS to turn on; threshold range -2.0V to -4.0V; ±20V absolute max rating
2 & 4 (Drain)High-side power terminalInternally connected to exposed backside metal pad; primary heat path and current return for load
3 (Source)Reference nodeConnected to system ground or floating rail; defines VGS reference; carries full load current

Key Features

FeatureDesign Value
P-channel enhancement modeEnables high-side switching with simple gate drive referenced to load supply, eliminating bootstrap complexity
Fully avalanche ratedGuarantees survivability during unclamped inductive switching events up to 100mJ without derating
Ultra-low RDS(on)0.48Ω minimizes I²R losses in space-constrained 48V telecom or industrial power modules
Fast switching speed14ns turn-on delay + 47ns rise time supports high-frequency DC-DC conversion with predictable timing margins
Surface-mount D-PakTO-252AA footprint enables automated assembly and efficient thermal coupling to PCB copper planes

Applications

Industrial Motor ControlTelecom DC-DC Converters

Use Scenario: Half-bridge high-side switch in 24–48V BLDC motor gate drivers.

IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled high-side power delivery with integrated body diode freewheeling.

Use Value: Avalanche rating ensures reliability during rapid PWM transitions and load dump events; RDS(on) limits thermal rise in enclosed enclosures.

Use Scenario: High-side switch in isolated 48V-to-12V synchronous buck converters for base station power supplies.

IC Role / Device Role / Timing Role: Primary high-side switching element operating at 200–500kHz with precise gate timing control.

Use Value: Low Qg and fast tr/tf reduce switching losses; TO-252 thermal performance sustains >3W dissipation on standard PCBs.

Automotive Body ControlLED Driver Circuits

Use Scenario: Load switch for 12V/24V automotive lighting or solenoid control with reverse-battery protection.

IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch enabling fail-safe load disconnect.

Use Value: VGS = ±20V rating withstands load-dump transients; -55°C to +150°C TJ range meets AEC-Q101 ambient requirements.

Use Scenario: Constant-current LED string switch in architectural lighting with PWM dimming.

IC Role / Device Role / Timing Role: High-side current regulator switch controlling LED cathode return path.

Use Value: Tight VGS(th) distribution (-2.0V to -4.0V) ensures consistent turn-on across temperature; low RDS(on) maintains current accuracy at high duty cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-side switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRFR9024NTRRVDS = -60V, RDS(on) = 0.27Ω, Qg = 22nCLimited to ≤60V systems; lower conduction loss but reduced blocking marginSelect when operating voltage is ≤42V and lowest RDS(on) is prioritized over avalanche margin
IPD95R1K2P7ATMA1VDS = -950V, RDS(on) = 1.2Ω, superjunction structure, TO-252Designed for high-voltage AC-DC PFC; higher VDS, much higher RDS(on), slower switchingOnly suitable where 950V blocking is required; not interchangeable for 100V-class designs

Compared with IRFR9024NTRR, the IRFR9120NTRR trades lower RDS(on) for higher voltage rating and greater avalanche energy - critical for 48V industrial systems with inductive loads. Against IPD95R1K2P7ATMA1, it offers 20× lower RDS(on) and 3× faster switching, making it appropriate for medium-voltage, high-efficiency DC-DC rather than HV rectification.

Availability

IRFR9120NTRR is available at Aetrix Electronics and suitable for industrial motor control, telecom DC-DC converters, and automotive body electronics requiring stable component supply and long-term manufacturability.

Supply support for IRFR9120NTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon-based power devices and system-level solutions.

The HEXFET® Power MOSFET product line delivers rugged, high-efficiency discrete transistors optimized for industrial power conversion, motor drives, and automotive subsystems - emphasizing avalanche robustness, thermal performance, and surface-mount reliability.

FAQ

What is the maximum safe operating voltage for IRFR9120NTRR in continuous DC blocking?

The IRFR9120NTRR has a guaranteed VDS rating of -100V under all conditions, with no derating required for DC operation at TJ ≤ 150°C. This rating is validated per JEDEC JESD22-A114 test conditions and applies to static blocking only - transient overvoltage must remain within the SOA curve limits shown in Figure 8 of the datasheet.

Can IRFR9120NTRR be used in synchronous rectification configurations?

No - IRFR9120NTRR is a P-channel MOSFET intended for high-side switching, not low-side synchronous rectification. Its body diode forward voltage (-1.6V at -3.9A) and lack of optimized reverse recovery characteristics make it unsuitable as a synchronous rectifier; N-channel devices like IRF7470 are preferred for that role.

What is the recommended PCB layout for optimal thermal performance?

Mount IRFR9120NTRR on a 1"² FR-4 PCB with ≥2oz copper on the drain pad layer, using multiple thermal vias (≥6 × 0.3mm diameter) to inner ground/power planes. Maintain ≥1.5mm clearance from adjacent components and avoid routing signal traces under the exposed drain pad to preserve thermal conduction integrity.

Does IRFR9120NTRR require gate resistors for reliable switching?

Yes - a series gate resistor (typically 10–47Ω) is required to dampen ringing caused by gate loop inductance and prevent unintended oscillation. The datasheet specifies RG = 12Ω for switching time measurements; omitting this resistor risks shoot-through in bridge configurations and excessive dv/dt-induced false turn-on.

IRFR9120NTRR Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
480mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
27 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
350 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
40W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRFR9120NTRR FAQ

1.How can I place an order for IRFR9120NTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9120NTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9120NTRR reliable?

The price and inventory of IRFR9120NTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9120NTRR is usually 5 days.

3.What payment methods are accepted for IRFR9120NTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9120NTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9120NTRR?

IRFR9120NTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9120NTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9120NTRR?

For technical support, including IRFR9120NTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9120NTRR requirements.

6.How does Aetrix verify that IRFR9120NTRR is sourced from the original manufacturer or authorized distributors?

All IRFR9120NTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9120NTRR meets industry standards.

7.What is the process for return or replacement of IRFR9120NTRR?

All IRFR9120NTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9120NTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9120NTRR part is unused and in its original packaging.

Return procedure for IRFR9120NTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFR9120NTRR Tags

  • IRFR9120NTRR
  • IRFR9120NTRR PDF
  • IRFR9120NTRR Datasheet
  • IRFR9120NTRR Specifications
  • IRFR9120NTRR Images
  • Infineon Technologies
  • Infineon Technologies IRFR9120NTRR
  • Buy IRFR9120NTRR
  • IRFR9120NTRR Price
  • IRFR9120NTRR Distributor
  • IRFR9120NTRR Supplier
  • IRFR9120NTRR Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER