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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR9N20DPBF

Name: IRFR9N20DPBF
Brand: Infineon Technologies
SKU: IRFR9N20DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9N20DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9N20DPBF.pdf

Description:: MOSFET N-CH 200V 9.4A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR9N20DPBF from Infineon Technologies (formerly International Rectifier) is a 200V, 9.4A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak package, optimized for high-frequency DC-DC converters with low R_DS(on) (0.38 Ω @ V_GS = 10 V), low gate charge (18–27 nC), and robust avalanche capability (100 mJ single-pulse). It serves as a primary switch in telecom 48V forward converters.

For engineers reviewing the IRFR9N20DPBF datasheet, IRFR9N20DPBF pinout, IRFR9N20DPBF application, or IRFR9N20DPBF equivalent, key selection criteria include its 200V V_DS, 0.38Ω R_DS(on), 18–27nC total gate charge, 5.0 V/ns diode recovery dv/dt rating, and D-Pak thermal performance (R_θJC = 1.75°C/W).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with fully characterized output capacitance (C_oss = 97 pF @ V_DS = 25 V; C_oss,eff = 74 pF over 0–160 V), enabling accurate snubberless flyback and forward converter design. Its gate threshold voltage (3.0–5.5 V) ensures stable turn-on under wide supply conditions.

Dynamic switching behavior is defined by measured parameters: t_d(on) = 7.5 ns, t_r = 16 ns, t_d(off) = 13 ns, t_f = 9.3 ns (I_D = 5.6 A, V_DD = 100 V, R_G = 11 Ω), and body diode reverse recovery time (t_rr = 130 ns, Q_rr = 560 nC at dI/dt = 100 A/µs), critical for synchronous rectification and ZVS topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Withstands up to 200 V drain-source blocking voltage, suitable for 48V telecom input systems with margin.
R_DS(on) max	0.38 Ω @ V_GS = 10 V, I_D = 5.6 A - Enables <1.5 W conduction loss at 5.6 A, reducing heatsink requirements.
Q_g	18–27 nC - Low gate drive energy supports >500 kHz switching without excessive driver loss.
E_AS	100 mJ - Rated unclamped inductive avalanche energy allows reliable operation during transient overloads.
R_θJC	1.75 °C/W - Junction-to-case thermal resistance enables 86 W continuous dissipation with adequate heatsinking.
t_rr	130 ns - Body diode recovery time impacts cross-conduction loss in half-bridge configurations.
dv/dt	5.0 V/ns - Peak diode recovery dv/dt rating defines maximum allowable voltage slew rate during commutation.

Pinout & Package

IRFR9N20DPBF uses the surface-mount D-Pak (TO-252AA) package with exposed drain pad for enhanced thermal transfer. The three terminals are arranged in standard D-Pak layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives 10 V logic-level signal to fully enhance channel; threshold 3.0–5.5 V ensures compatibility with 5 V/3.3 V controllers.
Drain (D)	High-side power terminal	Connected to PCB copper pour via exposed tab; carries full load current and dissipates heat directly to board.
Source (S)	Reference node	Serves as return path for drain current and gate drive reference; ties to power ground in low-side switch configuration.

Key Features

Feature	Design Value
Low gate-to-drain charge (Q_gd)	9.0–14 nC - Reduces Miller-induced switching delay and improves hard-switching efficiency.
Fully characterized C_oss,eff	74 pF - Enables precise calculation of resonant timing and zero-voltage switching points.
Lead-free construction	RoHS-compliant termination with Pb-free plating - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1).
Robust body diode	t_rr = 130 ns, Q_rr = 560 nC - Supports freewheeling in non-synchronous buck and flyback converters without external diode.

Applications

Telecom Forward Converter

Industrial DC-DC Module

Use Scenario: Primary-side switch in isolated 48V-input forward converter delivering 12V/20A output for base station power supplies.

IC Role / Device Role / Timing Role: High-side main switch operating at 200–300 kHz with synchronous rectification on secondary side.

Use Value: 0.38 Ω R_DS(on) limits conduction loss to ≤2 W at full load; low Q_g enables efficient gate driving with TC4427.

Use Scenario: Main switching element in compact 24V-input industrial DC-DC module for PLC I/O power rails.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology driving isolated transformer primary.

Use Value: 100 mJ E_AS withstands inductive kickback during short-circuit events; D-Pak footprint simplifies automated assembly.

LED Driver Power Stage

Motor Control H-Bridge

Use Scenario: Constant-current switch in high-brightness LED driver for street lighting with 100–200 V AC rectified input.

IC Role / Device Role / Timing Role: PWM-controlled high-side switch regulating average LED current at 1–10 kHz.

Use Value: 200 V V_DS accommodates peak line voltage surges; low R_DS(on) minimizes thermal derating at ambient >70°C.

Use Scenario: Upper-leg switch in 24V brushed DC motor H-bridge for HVAC actuators.

IC Role / Device Role / Timing Role: High-side driver in discrete half-bridge pair, controlled by bootstrap gate driver (e.g., IR2104).

Use Value: 5.0 V/ns dv/dt rating prevents false turn-on during fast voltage transitions; 130 ns t_rr reduces shoot-through risk during dead-time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK20ZFP	V_DS = 200 V, R_DS(on) = 0.42 Ω, Q_g = 22 nC, TO-220FP package	Through-hole mounting; higher R_DS(on) increases conduction loss by ~10% at 5.6 A	Preferred where through-hole reliability or manual rework is required; not drop-in compatible due to package and pinout.
IXTP9N20P	V_DS = 200 V, R_DS(on) = 0.36 Ω, Q_g = 20 nC, TO-220 package	Larger thermal resistance (R_θJC = 2.5°C/W); requires larger heatsink for same power dissipation	Used when higher surge current tolerance (I_DM = 45 A vs. 38 A) is prioritized over board space and thermal performance.

Compared with STP9NK20ZFP and IXTP9N20P, IRFR9N20DPBF offers superior thermal performance (R_θJC = 1.75°C/W), smaller D-Pak footprint, and lower gate charge-making it optimal for high-density, high-frequency SMPS designs where board area and switching loss are critical.

Availability

IRFR9N20DPBF is available at Aetrix Electronics and suitable for telecom forward converters, industrial DC-DC modules, LED driver power stages, and motor control H-bridges requiring stable component supply and long-term production continuity.

Supply support for IRFR9N20DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon MOSFET innovation.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies in telecom, industrial, and lighting applications.

FAQ

Is IRFR9N20DPBF suitable for 5 V gate drive?

No. Its gate threshold voltage range is 3.0–5.5 V, but full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on) of 0.38 Ω. At 5 V, R_DS(on) rises significantly (>1.2 Ω), increasing conduction loss and thermal stress. A dedicated gate driver (e.g., TC4427) or 10–12 V supply is required.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies I_D = 6.7 A at T_C = 100°C and V_GS = 10 V. This reflects thermal derating from the 9.4 A rating at 25°C, based on R_θJC = 1.75°C/W and maximum junction temperature of 175°C. Operation above this current requires active cooling or reduced ambient temperature.

Does IRFR9N20DPBF have avalanche ruggedness for inductive load switching?

Yes. It is fully specified for unclamped inductive switching with E_AS = 100 mJ (single-pulse) and I_AR = 5.6 A. These ratings are validated per JEDEC JESD24-11 and enable safe operation in relay drivers, solenoid controls, and flyback converters without external snubbers under defined test conditions.

Can IRFR9N20DPBF be used in parallel configurations?

Yes, but with careful attention to gate drive symmetry and current sharing. Its positive R_DS(on) temperature coefficient promotes inherent current balancing above 50°C junction temperature. Use matched gate resistors (≤1 Ω difference), symmetrical PCB layout, and individual gate resistors (10–22 Ω) to minimize oscillation and ensure simultaneous turn-on/turn-off.

IRFR9N20DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 560 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 86W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR9N20DPBF FAQ

1.How can I place an order for IRFR9N20DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9N20DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9N20DPBF reliable?

The price and inventory of IRFR9N20DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9N20DPBF is usually 5 days.

3.What payment methods are accepted for IRFR9N20DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9N20DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9N20DPBF?

IRFR9N20DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9N20DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9N20DPBF?

For technical support, including IRFR9N20DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9N20DPBF requirements.

6.How does Aetrix verify that IRFR9N20DPBF is sourced from the original manufacturer or authorized distributors?

All IRFR9N20DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9N20DPBF meets industry standards.

7.What is the process for return or replacement of IRFR9N20DPBF?

All IRFR9N20DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9N20DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9N20DPBF part is unused and in its original packaging.

Return procedure for IRFR9N20DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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