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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR9N20DTR

Name: IRFR9N20DTR
Brand: Infineon Technologies
SKU: IRFR9N20DTR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9N20DTR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9N20DTR.pdf

Description:: MOSFET N-CH 200V 9.4A DPAK

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Product details

Overview

IRFR9N20DTR from Infineon Technologies (formerly International Rectifier) is a 200V, 9.4A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, optimized for high-frequency DC-DC converters and SMPS topologies including forward converters with 48V input. It features R_DS(on) = 0.38 Ω @ V_GS = 10V, Q_g = 18–27 nC, and C_oss(eff) = 74 pF, enabling low switching loss in hard-switched power stages.

For engineers reviewing the IRFR9N20DTR datasheet, IRFR9N20DTR pinout, IRFR9N20DTR application, or IRFR9N20DTR equivalent, key selection criteria include its 200V V_BR(DSS), 0.38Ω on-resistance at 10V gate drive, 175°C max junction temperature, avalanche-rated construction (E_AS = 100 mJ), and D-Pak thermal performance (R_θJC = 1.75°C/W).

Technical Context

This HEXFET device uses planar vertical DMOS structure with fully characterized dynamic parameters including C_iss = 560 pF, C_oss = 97 pF (V_DS = 25V), and C_rss = 29 pF - critical for snubberless flyback and resonant LLC design. Its gate charge profile (Q_gd/Q_gs ≈ 2.0) supports predictable Miller-effect timing in synchronous rectification.

The integrated body diode exhibits t_rr = 130 ns and Q_rr = 560 nC at I_F = 5.6A, di/dt = 100 A/µs, making it suitable for freewheeling in non-isolated buck converters where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	200 V - Withstands 48V-input forward converter primary-side voltage spikes up to 160V with margin
R_DS(on) max	0.38 Ω @ V_GS = 10V - Enables <1.5W conduction loss at 6.7A continuous current (T_C = 100°C)
I_D cont	9.4 A @ T_C = 25°C - Supports >100W output in compact D-Pak SMPS designs with forced-air cooling
Q_g	18–27 nC - Determines gate driver current requirement (~1.8–2.7A peak for 10ns rise time)
E_AS	100 mJ - Withstands unclamped inductive switching events in offline flyback or PFC boost stages
R_θJC	1.75 °C/W - Allows ~49W dissipation before reaching 175°C junction limit at 25°C case temperature

Pinout & Package

IRFR9N20DTR is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal enhancement. The package has three terminals: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the heatsinkable tab.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 3.0–5.5V threshold and ±30V absolute max rating
D	Drain	Main high-side power terminal; tied to PCB copper pour for thermal management and high-current return path
S	Source	Reference node for gate drive and current sensing; connects to low-side switch or ground plane

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	~50% - Reduces Miller-induced shoot-through risk in half-bridge configurations
Fully characterized C_oss(eff)	74 pF - Enables accurate soft-switching timing prediction in ZVS/ZCS topologies
Avalanche-rated	E_AS = 100 mJ - Eliminates need for external clamping in inductive load switching
Lead-free construction	RoHS-compliant - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for reflow assembly

Applications

48V Telecom Forward Converter

Industrial DC-DC Buck Regulator

Use Scenario: Primary-side switch in isolated 48V-to-12V forward converter operating at 200–500 kHz.

IC Role / Device Role / Timing Role: High-side power switch handling 200V blocking and 9.4A peak current during PWM on-time.

Use Value: Low C_oss(eff) (74 pF) minimizes turn-on loss; R_DS(on) = 0.38Ω limits conduction loss to <2.5W at full load.

Use Scenario: Synchronous rectifier in non-isolated 24V-to-5V buck converter for PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side switch with fast body diode recovery (t_rr = 130 ns) enabling efficient synchronous operation.

Use Value: Q_rr = 560 nC reduces reverse recovery charge loss; 175°C T_J rating supports sealed enclosure thermal design.

UPS Inverter Half-Bridge

LED Driver Flyback Switch

Use Scenario: High-side switch in 120VAC-fed UPS inverter half-bridge driving resistive-inductive loads.

IC Role / Device Role / Timing Role: Hard-switched power switch subjected to repetitive unclamped inductive energy during fault conditions.

Use Value: E_AS = 100 mJ ensures reliable operation without external snubbers during short-circuit events.

Use Scenario: Primary-side switch in 120VAC-input LED driver flyback converter delivering 36W to constant-current string.

IC Role / Device Role / Timing Role: Energy-transfer switch operating at 65 kHz with 200V V_DS stress during demagnetization.

Use Value: V_BR(DSS) = 200V provides 2× safety margin over reflected output voltage + leakage spike.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK20ZFP	Zener-protected gate; R_DS(on) = 0.42Ω; higher C_oss (120 pF)	Better gate robustness but slower switching due to higher capacitance	Preferred where ESD immunity > switching speed in industrial motor drives
IXTP9N20P	TO-220 package; R_DS(on) = 0.39Ω; lower Q_g (15 nC); no avalanche rating	Requires heatsink; unsuitable for unclamped inductive loads	Selected when board space allows TO-220 and avalanche stress is absent

Compared with STP9NK20ZFP and IXTP9N20P, IRFR9N20DTR uniquely balances D-Pak thermal efficiency, avalanche ruggedness, and low effective output capacitance-making it optimal for compact, high-reliability SMPS where layout area and fault tolerance are constrained.

Availability

IRFR9N20DTR is available at Aetrix Electronics and suitable for telecom forward converters, industrial DC-DC regulators, UPS inverters, and LED driver flyback circuits requiring stable component supply across multi-year production cycles.

Supply support for IRFR9N20DTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with rigorous automotive-grade qualification and industrial reliability standards.

This part belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies where low gate charge, controlled capacitance, and rugged avalanche capability are essential.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR9N20DTR supports 6.7A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package and must be verified against actual PCB copper area and airflow in the target application.

Does this MOSFET have an integrated body diode, and what are its recovery characteristics?

Yes, IRFR9N20DTR includes a monolithic body diode with t_rr = 130 ns and Q_rr = 560 nC under standard test conditions (I_F = 5.6A, di/dt = 100 A/µs, T_J = 25°C). These values are measured and published in the Diode Characteristics section of the datasheet.

Can IRFR9N20DTR be used in avalanche mode, and what is its single-pulse energy rating?

Yes - it is fully rated for repetitive and single-pulse avalanche operation. The datasheet specifies E_AS = 100 mJ (single-pulse) and E_AR = 8.6 mJ (repetitive) at T_J = 25°C. Avalanche testing was performed per JEDEC JESD24-11 using unclamped inductive switching.

Is the IRFR9N20DTR RoHS-compliant and lead-free?

Yes - the "P" suffix in the original part number IRFR9N20DPbF indicates lead-free (Pb-free) construction, compliant with RoHS Directive 2011/65/EU. The device meets MSL1 per IPC-J-STD-020 and is qualified for standard reflow soldering profiles.

IRFR9N20DTR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 560 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 86W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR9N20DTR FAQ

1.How can I place an order for IRFR9N20DTR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9N20DTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9N20DTR reliable?

The price and inventory of IRFR9N20DTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9N20DTR is usually 5 days.

3.What payment methods are accepted for IRFR9N20DTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9N20DTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9N20DTR?

IRFR9N20DTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9N20DTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9N20DTR?

For technical support, including IRFR9N20DTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9N20DTR requirements.

6.How does Aetrix verify that IRFR9N20DTR is sourced from the original manufacturer or authorized distributors?

All IRFR9N20DTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9N20DTR meets industry standards.

7.What is the process for return or replacement of IRFR9N20DTR?

All IRFR9N20DTR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9N20DTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9N20DTR part is unused and in its original packaging.

Return procedure for IRFR9N20DTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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