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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR9N20DTRL

Name: IRFR9N20DTRL
Brand: Infineon Technologies
SKU: IRFR9N20DTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9N20DTRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9N20DTRL.pdf

Description:: MOSFET N-CH 200V 9.4A DPAK

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Product details

Overview

IRFR9N20DTRL from Infineon Technologies (formerly International Rectifier) is a 200V, 9.4A N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, optimized for high-frequency DC-DC converters and SMPS topologies including forward converters with 48V input. It features 0.38Ω R_DS(on) at V_GS = 10V, 18–27nC total gate charge, and 100mJ single-pulse avalanche energy.

For engineers reviewing the IRFR9N20DTRL datasheet, IRFR9N20DTRL pinout, IRFR9N20DTRL application, or IRFR9N20DTRL equivalent, key selection criteria include its 200V V_BR(DSS), low Q_gd/Q_gs ratio for fast switching, body diode t_rr of 130ns, and R_θJC of 1.75°C/W for thermal management in compact power stages.

Technical Context

This HEXFET device uses planar vertical DMOS structure with fully characterized output capacitance (C_oss = 97pF @ V_DS = 25V; C_oss(eff) = 74pF), enabling accurate snubberless design in hard-switched topologies. Its gate threshold voltage (3.0–5.5V) and low 0.23V/°C breakdown voltage temperature coefficient support stable operation across -55°C to +175°C junction range.

The MOSFET integrates a robust intrinsic body diode with V_SD = 1.3V at I_S = 5.6A and controlled reverse recovery (Q_rr = 560nC, di/dt = 100A/µs), making it suitable for synchronous rectification and freewheeling paths where diode conduction and turn-off behavior directly impact efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	200V - Withstands up to 200V drain-source blocking voltage before avalanche onset, enabling use in 48V telecom input systems with margin.
R_DS(on) max	0.38Ω @ V_GS = 10V, I_D = 5.6A - Defines conduction loss in continuous current mode; contributes ~3.4W loss at 9.4A.
Q_g	18–27nC - Total gate charge determines driver strength requirement; enables <100ns switching transitions with 11Ω gate resistor.
E_AS	100mJ - Single-pulse avalanche energy rating supports unclamped inductive switching without failure under transient overvoltage.
t_rr	130ns - Body diode reverse recovery time impacts shoot-through risk and EMI in half-bridge configurations.
R_θJC	1.75°C/W - Junction-to-case thermal resistance enables direct heatsinking via PCB copper pour or clip-mount solutions.

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Standard three-terminal configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Receives 0–10V logic-level drive; requires <27nC charge to fully enhance; sensitive to ESD (±30V absolute max).
D	Drain (high-side switch node)	Connected to exposed metal tab; carries full load current and must be thermally coupled to PCB ground plane or heatsink.
S	Source (return path)	Reference node for gate drive; forms common return with body diode cathode; routed with low-inductance layout for switching stability.

Key Features

Feature	Design Value
Low gate-to-drain charge (Q_gd)	9.0–14nC - Reduces Miller effect during switching, enabling faster turn-off and improved dv/dt immunity in high-side applications.
Fully characterized C_oss(eff)	74pF - Effective output capacitance over 0–160V range allows precise calculation of turn-on loss and resonant timing in ZVS designs.
Avalanche-rated	100mJ single-pulse - Eliminates need for external clamping in inductive load switching, simplifying protection circuitry.
Lead-free construction	RoHS-compliant per IRF documentation - Meets JEDEC J-STD-020 reflow profile with 300°C peak soldering temperature (10s, 1.6mm from case).

Applications

Telecom Forward Converter

Industrial DC-DC Module

Use Scenario: 48V input forward converter delivering 12V/10A output in telecom shelf power supplies.

IC Role / Device Role / Timing Role: Primary-side active switch operating at 200–500kHz with zero-voltage switching assistance.

Use Value: Low R_DS(on) minimizes conduction loss at full load; low Q_g enables efficient gate driving with integrated controller.

Use Scenario: Isolated 24V-to-5V DC-DC module for PLC I/O modules requiring high reliability.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward topology handling repetitive 10A pulsed loads.

Use Value: 175°C max junction temperature and 100mJ E_AS ensure robustness against line transients and startup surges.

Motor Drive Half-Bridge

LED Driver Power Stage

Use Scenario: 24V BLDC motor driver stage controlling 3-phase inverter with PWM up to 20kHz.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg; body diode conducts freewheeling current during dead-time.

Use Value: 130ns t_rr and 560nC Q_rr reduce switching losses and EMI compared to standard MOSFETs with slower diodes.

Use Scenario: Constant-current LED driver for street lighting with 36V string voltage and 1.5A output.

IC Role / Device Role / Timing Role: Primary switch in buck-derived constant-on-time (COT) regulator operating at 300kHz.

Use Value: 0.38Ω R_DS(on) limits thermal rise in sealed outdoor enclosures; D-Pak package allows direct heatsink mounting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK20ZFP	200V, 9A, 0.42Ω R_DS(on), 22nC Q_g, TO-220FP package	Through-hole mounting; higher R_θJA (62°C/W); no specified avalanche rating	Preferred where through-hole assembly and higher thermal mass are acceptable; not drop-in for SMT layouts.
IXTP9N20P	200V, 9A, 0.40Ω R_DS(on), 24nC Q_g, TO-220 package, 80mJ E_AS	Larger footprint; lower peak current rating (IDM = 32A vs. 38A); same junction temp range	Used where legacy TO-220 board space exists and slightly lower avalanche margin is acceptable.

Compared with STP9NK20ZFP and IXTP9N20P, IRFR9N20DTRL offers superior SMT thermal performance (R_θJC = 1.75°C/W), higher avalanche energy (100mJ), and lower gate charge-critical for high-frequency, space-constrained power stages.

Availability

IRFR9N20DTRL is available at Aetrix Electronics and suitable for telecom forward converters, industrial DC-DC modules, motor drive half-bridges, and LED driver power stages requiring stable component supply and long-term production continuity.

Supply support for IRFR9N20DTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET® power MOSFET product line with full technical documentation and application engineering resources.

The IRFR9N20DTRL belongs to the HEXFET® family designed specifically for high-efficiency, high-frequency switched-mode power supplies-emphasizing low gate charge, rugged avalanche capability, and thermally optimized surface-mount packaging.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR9N20DTRL supports 6.7A continuous drain current at T_C = 100°C with V_GS = 10V. This derating reflects thermal limitations of the D-Pak package and ensures safe operation within the 175°C maximum junction temperature limit under sustained load conditions.

Does this MOSFET have a specified body diode reverse recovery charge?

Yes, Q_rr is specified as 560nC under test conditions of I_F = 5.6A, di/dt = 100A/µs, and T_J = 25°C. This value is critical for estimating commutation losses and EMI generation when the body diode conducts freewheeling current in bridge configurations.

Can IRFR9N20DTRL be driven directly by a 3.3V microcontroller GPIO?

No-its gate threshold voltage ranges from 3.0V to 5.5V, and full enhancement (to achieve 0.38Ω R_DS(on)) requires V_GS ≥ 10V. A dedicated gate driver or level-shifting circuit is required for reliable switching at rated current.

What is the recommended PCB layout practice for thermal management?

Maximize copper area connected to the exposed drain pad using multiple thermal vias (≥8×0.3mm) to inner ground planes. Maintain ≥1.5mm clearance between drain pad and other traces. Use minimum 2oz copper on outer layers and verify thermal simulation shows T_J < 150°C at full load with ambient ≤ 70°C.

IRFR9N20DTRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 560 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 86W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR9N20DTRL FAQ

1.How can I place an order for IRFR9N20DTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9N20DTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9N20DTRL reliable?

The price and inventory of IRFR9N20DTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9N20DTRL is usually 5 days.

3.What payment methods are accepted for IRFR9N20DTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9N20DTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9N20DTRL?

IRFR9N20DTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9N20DTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9N20DTRL?

For technical support, including IRFR9N20DTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9N20DTRL requirements.

6.How does Aetrix verify that IRFR9N20DTRL is sourced from the original manufacturer or authorized distributors?

All IRFR9N20DTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9N20DTRL meets industry standards.

7.What is the process for return or replacement of IRFR9N20DTRL?

All IRFR9N20DTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9N20DTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9N20DTRL part is unused and in its original packaging.

Return procedure for IRFR9N20DTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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