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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR9N20DTRLPBF

Name: IRFR9N20DTRLPBF
Brand: Infineon Technologies
SKU: IRFR9N20DTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9N20DTRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9N20DTRLPBF.pdf

Description:: MOSFET N-CH 200V 9.4A DPAK

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Product details

Overview

IRFR9N20DTRLPBF from Infineon Technologies (formerly International Rectifier) is a 200V, 9.4A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, optimized for high-frequency DC-DC converters and forward topology SMPS. It features 0.38Ω R_DS(on) at V_GS = 10V, 18–27nC total gate charge, and 100mJ single-pulse avalanche energy - enabling robust switching in telecom 48V-input power supplies.

For engineers reviewing the IRFR9N20DTRLPBF datasheet, IRFR9N20DTRLPBF pinout, IRFR9N20DTRLPBF application, or IRFR9N20DTRLPBF equivalent, key selection criteria include its 200V V_BR(DSS), low 0.38Ω on-resistance at 5.6A, 130ns body diode reverse recovery time, and D-Pak thermal performance with R_θJC = 1.75°C/W.

Technical Context

This HEXFET device uses planar vertical DMOS technology with fully characterized output capacitance (C_oss = 97pF at V_DS = 25V; C_oss,eff = 74pF), enabling accurate snubberless design in hard-switched topologies. Its gate threshold voltage (3.0–5.5V) and 10V-rated drive ensure compatibility with standard PWM controllers.

The integrated body diode exhibits 1.3V forward drop at 5.6A and 130ns trr with 560nC Q_rr, supporting synchronous rectification and unclamped inductive switching. Avalanche ruggedness (I_AR = 5.6A, E_AS = 100mJ) allows operation under transient overloads without external protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	200V - Withstands 48V-input forward converter primary-side voltage spikes up to 160V with margin.
R_DS(on) max	0.38Ω @ V_GS = 10V, I_D = 5.6A - Limits conduction loss to ≤2.1W at 9.4A continuous drain current.
Q_g typ/max	18–27nC - Enables <100ns turn-on delay (t_d(on) = 7.5ns) and fast switching at 300kHz+ frequencies.
C_oss,eff	74pF - Reduces capacitive switching loss and simplifies resonant transition design in ZVS/ZCS circuits.
E_AS	100mJ - Sustains single-pulse inductive energy without failure during startup or overload conditions.
t_rr/Q_rr	130ns / 560nC - Minimizes body-diode commutation loss in synchronous buck or LLC secondary-side rectification.
R_θJC	1.75°C/W - Supports 86W continuous dissipation with heatsink interface, critical for compact 1U telecom PSU designs.

Pinout & Package

IRFR9N20DTRLPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal enhancement. The package measures 6.73 × 6.22 × 2.39 mm and is lead-free (Pb-free) per RoHS.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or power return path; carries full load current.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET control node; requires 10V drive for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Power output (D)	Exposed copper pad (top side); connects to high-voltage rail; primary thermal path to PCB copper pour.

Key Features

Feature	Design Value
Low gate-to-drain charge (Q_gd)	9.0–14nC - Reduces Miller-induced switching instability and enables stable operation with high dv/dt (5V/ns).
Fully characterized C_oss vs. V_DS	97pF @ 25V → 40pF @ 160V - Allows precise calculation of turn-off energy and snubber sizing across operating range.
Enhanced avalanche capability	100mJ E_AS with 5.6A I_AR - Eliminates need for external clamping in flyback or forward converter primary switches.
Optimized body diode	1.3V V_SD @ 5.6A, 130ns t_rr - Supports quasi-resonant operation and reduces cross-conduction loss in half-bridge configurations.

Applications

Telecom 48V Forward Converter

Industrial DC-DC Module

Use Scenario: Primary-side switch in isolated 48V-input forward converter delivering 12V/20A to base station subsystems.

IC Role / Device Role / Timing Role: High-side switching element synchronized to 200–500kHz PWM controller; handles 200V blocking and 9.4A peak current.

Use Value: 0.38Ω R_DS(on) limits conduction loss to 3.4W at full load; 100mJ avalanche rating absorbs transformer leakage energy.

Use Scenario: Secondary-side synchronous rectifier in 12V-output industrial DC-DC module with 3.3V/5V auxiliary rails.

IC Role / Device Role / Timing Role: Low-side N-channel MOSFET replacing Schottky diode; driven by gate driver referenced to source.

Use Value: Body diode t_rr = 130ns and Q_rr = 560nC minimize reverse recovery loss; D-Pak thermal resistance enables 6.7A derated current at 100°C case.

LED Driver Power Stage

Motor Control H-Bridge

Use Scenario: High-side switch in constant-current LED driver for street lighting with 100–200V bus.

IC Role / Device Role / Timing Role: PWM-controlled current regulator; operates in linear and switching modes during dimming transitions.

Use Value: 200V V_BR(DSS) supports 170V AC rectified input; 1.75°C/W R_θJC maintains junction temperature below 150°C under 100% duty cycle.

Use Scenario: Low-side switch in 24V brushed DC motor H-bridge driving 5A stall current.

IC Role / Device Role / Timing Role: One quadrant of bidirectional drive; switched at ≤20kHz with dead-time control.

Use Value: 9.4A continuous rating covers motor surge; 0.38Ω on-resistance ensures <2W loss at 5A; SOA curve supports 10ms pulse overload.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK20ZFP	Zener-protected gate; higher R_DS(on) = 0.42Ω; lower Q_g = 14nC	Better ESD immunity but reduced efficiency at high current; slower dV/dt immunity	Preferred where gate protection outweighs conduction loss penalty
IXTP9N20P	TO-220 package; identical V_BR(DSS) and R_DS(on); higher R_θJA = 62°C/W	Requires heatsink; unsuitable for ultra-thin PCB layouts; better manual assembly	Chosen when mechanical mounting or serviceability is prioritized over thermal density

Compared with STP9NK20ZFP and IXTP9N20P, IRFR9N20DTRLPBF delivers superior thermal performance in space-constrained SMPS via D-Pak's 1.75°C/W R_θJC, while maintaining competitive switching speed and avalanche robustness without gate protection overhead.

Availability

IRFR9N20DTRLPBF is available at Aetrix Electronics and suitable for telecom power supplies, industrial DC-DC modules, LED drivers, and motor control H-bridges requiring stable component supply and long-term production continuity.

Supply support for IRFR9N20DTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors, focusing on energy-efficient systems for industrial, automotive, and communications markets.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching power conversion in telecom and industrial SMPS topologies.

FAQ

Is IRFR9N20DTRLPBF suitable for synchronous rectification?

Yes - its body diode has 1.3V forward voltage at 5.6A and 130ns reverse recovery time, enabling efficient synchronous rectification in secondary-side DC-DC stages. Gate drive must be referenced to source, and timing must avoid shoot-through; typical use requires external gate driver with adaptive dead-time control.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies 6.7A continuous drain current at T_C = 100°C and V_GS = 10V. This derating accounts for thermal resistance and safe operating area limits; actual usable current depends on PCB copper area, airflow, and ambient temperature.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 10–47Ω) is recommended to dampen ringing caused by gate loop inductance and MOSFET input capacitance. The device's Q_gd of 9–14nC and C_iss of 560pF make it susceptible to oscillation without proper gate drive impedance matching.

Can IRFR9N20DTRLPBF replace IRFR9N20DPbF?

Yes - IRFR9N20DTRLPBF is the lead-free (RoHS-compliant) version of IRFR9N20DPbF, with identical electrical specifications, pinout, and package. The "PbF" suffix denotes lead-free plating; both share the same D-Pak footprint and thermal characteristics.

IRFR9N20DTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 560 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 86W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR9N20DTRLPBF FAQ

1.How can I place an order for IRFR9N20DTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9N20DTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9N20DTRLPBF reliable?

The price and inventory of IRFR9N20DTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9N20DTRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR9N20DTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9N20DTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9N20DTRLPBF?

IRFR9N20DTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9N20DTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9N20DTRLPBF?

For technical support, including IRFR9N20DTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9N20DTRLPBF requirements.

6.How does Aetrix verify that IRFR9N20DTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR9N20DTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9N20DTRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR9N20DTRLPBF?

All IRFR9N20DTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9N20DTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9N20DTRLPBF part is unused and in its original packaging.

Return procedure for IRFR9N20DTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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