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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR9N20DTRPBF

Name: IRFR9N20DTRPBF
Brand: Infineon Technologies
SKU: IRFR9N20DTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9N20DTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9N20DTRPBF.pdf

Description:: MOSFET N-CH 200V 9.4A DPAK

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Product details

Overview

IRFR9N20DTRPBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 9.4 A, 0.38 Ω R_DS(on) N-channel DPAK-3 surface-mount power MOSFET optimized for high-frequency DC-DC converters and offline SMPS. It features fully characterized C_oss (74 pF effective), low Q_gd (9.0–14 nC), and 100 mJ single-pulse avalanche energy - enabling robust hard-switching in 48 V telecom forward converters.

For engineers reviewing the IRFR9N20DTRPBF datasheet, IRFR9N20DTRPBF pinout, IRFR9N20DTRPBF application, or IRFR9N20DTRPBF equivalent, key selection criteria include its 5.0 V/ns diode recovery dv/dt rating, 1.75 °C/W junction-to-case thermal resistance, and lead-free DPAK package compatibility with automated PCB assembly.

Technical Context

This HEXFET device uses planar vertical DMOS technology with an integrated body diode rated for 5.6 A continuous source current and 130 ns reverse recovery time. Its gate threshold voltage (3.0–5.5 V) and low total gate charge (18–27 nC) support clean turn-on/turn-off control under 10 V gate drive in fixed-frequency PWM topologies.

The MOSFET's dynamic parameters are fully specified across temperature: R_DS(on) increases to 0.52 Ω at T_J = 125 °C, while avalanche capability remains validated up to I_AR = 5.6 A and E_AR = 8.6 mJ repetitive. Thermal derating is linear at 0.57 W/°C above 25 °C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands 48 V input-derived bus voltages with ≥2× margin in flyback/forward converters
R_DS(on) max	0.38 Ω @ V_GS = 10 V, I_D = 5.6 A - Limits conduction loss to ≤2.1 W at 9.4 A DC load
Q_gd	9.0–14 nC - Reduces Miller-induced switching delay and improves gate drive efficiency
E_AS	100 mJ - Sustains unclamped inductive switching events without failure in 100 µs pulses
C_oss(eff)	74 pF - Enables accurate snubberless soft-switching design in resonant LLC topologies
T_J range	−55 to +175 °C - Supports operation in sealed industrial power supplies without active cooling
R_θJC	1.75 °C/W - Allows 86 W dissipation with ≤150 °C junction rise over 25 °C case

Pinout & Package

IRFR9N20DTRPBF is housed in a lead-free DPAK (TO-252AA) surface-mount package with gull-wing leads, optimized for high-current PCB thermal relief and automated reflow soldering. The package exposes the drain pad on the bottom for direct thermal connection to copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level gate drive; 3.0–5.5 V V_GS(th) ensures reliable enhancement-mode turn-on
2 (Drain)	High-side power terminal	Connected to switched HV rail; electrically tied to exposed backside thermal pad
3 (Source)	Reference and return path	Serves as local ground reference for gate driver; carries full load current and body diode conduction

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	~50% - Minimizes Miller plateau duration and improves switching controllability at 500 kHz+
Fully characterized C_oss	74 pF effective - Enables precise calculation of turn-off energy and resonant timing in ZVS designs
Lead-free construction	RoHS-compliant DPAK - Meets IPC-J-STD-020D reflow profile with 300 °C peak (10 s)
Avalanche-rated	100 mJ single-pulse - Eliminates need for external clamping in cost-sensitive offline adapters
Fast body diode	t_rr = 130 ns, Q_rr = 560 nC - Reduces cross-conduction loss in synchronous rectification and half-bridge freewheeling

Applications

Telecom 48V Forward Converter

Industrial AC-DC Adapter

Use Scenario: Primary-side switch in isolated 48 V input, 12 V output forward converter operating at 200–500 kHz.

IC Role / Device Role / Timing Role: High-side power switch handling 9.4 A peak primary current with controlled dv/dt during turn-off.

Use Value: Low R_DS(on) and 5.0 V/ns diode dv/dt rating suppress EMI generation and reduce snubber losses by >30% vs. legacy 250 V MOSFETs.

Use Scenario: Main switch in universal-input (85–265 VAC) offline flyback supplying 24 V/3 A for PLC I/O modules.

IC Role / Device Role / Timing Role: Energy-transfer switch with avalanche tolerance during line surges and transformer leakage spikes.

Use Value: 100 mJ E_AS withstands 1.2 kV/0.5 µs surge transients without derating, eliminating external TVS in Class II designs.

Server VRM High-Side Switch

LED Driver Buck Controller

Use Scenario: High-side FET in multiphase buck converter delivering 45 A at 1.2 V for CPU core power.

IC Role / Device Role / Timing Role: Fast-switching power stage element synchronized to 600 kHz PWM controller with dead-time control.

Use Value: 18–27 nC Q_g enables <100 ns turn-on delay using 2 A gate drivers, supporting tight phase alignment in 3+ phase systems.

Use Scenario: Constant-current switch in 100 W isolated LED driver with analog dimming interface.

IC Role / Device Role / Timing Role: PWM-controlled current regulator modulating LED string current at 1–10 kHz.

Use Value: 130 ns t_rr and low Q_rr prevent current tailing during dimming transitions, maintaining ±2% current regulation accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK20ZFP	Zener-protected gate; higher R_DS(on) (0.42 Ω); lower Q_gd (7.5 nC)	Better ESD immunity but reduced avalanche margin (E_AS = 65 mJ)	Preferred where gate protection outweighs ruggedness needs, e.g., consumer-grade adapters
IXTP9N20P	TO-220 package; identical V_DSS/R_DS(on); higher C_iss (620 pF)	Requires heatsink; unsuitable for high-density SMT layouts	Used when thermal mass > PCB copper area is required, e.g., open-frame industrial supplies

Compared with STP9NK20ZFP and IXTP9N20P, IRFR9N20DTRPBF delivers superior thermal performance in space-constrained SMT designs, balanced switching loss via optimized Q_gd/Q_g, and highest validated avalanche energy - making it optimal for telecom and server power where reliability and density intersect.

Availability

IRFR9N20DTRPBF is available at Aetrix Electronics and suitable for telecom forward converters, industrial AC-DC adapters, server VRM high-side switches, and LED driver buck controllers requiring stable component supply and long-term lifecycle assurance.

Supply support for IRFR9N20DTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with deep expertise in silicon-based power electronics.

This part belongs to Infineon's legacy HEXFET® power MOSFET product line, designed specifically for high-efficiency, high-reliability switch-mode power supplies operating from 24 V to 400 V DC input rails.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR9N20DTRPBF supports 6.7 A continuous drain current at T_C = 100 °C with V_GS = 10 V, per the Absolute Maximum Ratings table. This reflects thermal derating from the 9.4 A rating at 25 °C, governed by the 0.57 W/°C linear derating factor and 1.75 °C/W R_θJC.

Does this MOSFET require a gate resistor for safe operation in hard-switching circuits?

Yes - a gate resistor (typically 11 Ω, per datasheet test conditions) is required to control dV/dt and prevent oscillation during switching. The device's 9.0–14 nC Q_gd and 560 pF C_iss make it susceptible to ringing without proper gate impedance matching to the driver output impedance.

Can IRFR9N20DTRPBF be used in synchronous rectification topologies?

No - it is not optimized for synchronous rectification. Its body diode has 130 ns t_rr and 560 nC Q_rr, which cause significant reverse recovery loss when used as a low-side switch. Dedicated synchronous rectifier MOSFETs (e.g., IRF7832) offer sub-30 ns t_rr and <100 nC Q_rr for that function.

Is the DPAK package of IRFR9N20DTRPBF compatible with standard reflow profiles?

Yes - the lead-free DPAK package is qualified for IPC-J-STD-020D Level 3 reflow, with peak temperature of 300 °C for 10 seconds at 1.6 mm from the case. Board layout must provide ≥200 mm² exposed drain pad copper area with ≥4 thermal vias for optimal thermal performance.

IRFR9N20DTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 560 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 86W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR9N20DTRPBF FAQ

1.How can I place an order for IRFR9N20DTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9N20DTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9N20DTRPBF reliable?

The price and inventory of IRFR9N20DTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9N20DTRPBF is usually 5 days.

3.What payment methods are accepted for IRFR9N20DTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9N20DTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9N20DTRPBF?

IRFR9N20DTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9N20DTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9N20DTRPBF?

For technical support, including IRFR9N20DTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9N20DTRPBF requirements.

6.How does Aetrix verify that IRFR9N20DTRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR9N20DTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9N20DTRPBF meets industry standards.

7.What is the process for return or replacement of IRFR9N20DTRPBF?

All IRFR9N20DTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9N20DTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9N20DTRPBF part is unused and in its original packaging.

Return procedure for IRFR9N20DTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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