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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS23N15D

Name: IRFS23N15D
Brand: Infineon Technologies
SKU: IRFS23N15D
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS23N15D

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS23N15D.pdf

Description:: MOSFET N-CH 150V 23A D2PAK

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Product details

Overview

IRFS23N15D from Infineon Technologies (formerly International Rectifier) is a 150V, 23A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-frequency DC-DC converters. It delivers 0.090Ω R_DS(on) at V_GS = 10V, 37nC total gate charge, and 210pF effective output capacitance (C_oss,eff), enabling efficient active-clamp forward and telecom 48V input SMPS topologies.

For engineers reviewing the IRFS23N15D datasheet, IRFS23N15D pinout, IRFS23N15D application, or IRFS23N15D equivalent, key selection criteria include avalanche ruggedness (260mJ single-pulse E_AS), low Q_gd/Q_g ratio for reduced switching loss, and validated diode recovery dv/dt of 4.1V/ns under controlled test conditions.

Technical Context

This MOSFET employs planar silicon process with optimized cell geometry to achieve low R_DS(on) while maintaining robust unclamped inductive switching capability. Its fully characterized C_iss, C_oss, and C_rss (1200pF/260pF/65pF at V_DS = 25V) support accurate snubber and gate drive design in hard-switched topologies.

The device features a fast, soft-recovery body diode with t_rr = 150–220ns and Q_rr = 0.8–1.2µC at dI/dt = 100A/µs, critical for minimizing commutation loss in synchronous rectification and active-clamp circuits. Junction-to-case thermal resistance is 1.1°C/W, enabling high-power operation with standard heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150V - Withstands 48V telecom bus transients up to 120V without breakdown
R_DS(on) max	0.090Ω @ V_GS = 10V - Enables ≤2.1W conduction loss at 14A continuous drain current
Q_g typ	37nC - Supports <100kHz switching with 5.1Ω gate resistor and 12V drive
C_oss,eff	210pF - Reduces capacitive turn-on loss and simplifies resonant transition design
E_AS max	260mJ - Sustains single-pulse inductive energy in active-clamp reset without failure
t_rr max	220ns - Limits reverse recovery overshoot and ringing in high-dI/dt synchronous FETs
R_θJC	1.1°C/W - Allows 136W power dissipation at T_C = 25°C with minimal thermal margin

Pinout & Package

IRFS23N15D uses the industry-standard TO-220AB package with isolated tab (drain-connected), rated for 10 lbf·in mounting torque and 300°C soldering temperature at 1.6mm from case.

Pin/Terminal	Circuit Role	Design Meaning
1 – Gate	Control electrode	Receives 10V logic-level drive; threshold voltage 3.0–5.5V enables compatibility with standard PWM controllers
2 – Drain	Main current path anode	Internally connected to metal tab; requires electrical isolation when mounted to heatsink
3 – Source	Main current path cathode / reference node	Serves as return path for load current and gate drive reference; low-inductance layout essential for fast switching
4 – Drain (Tab)	Thermal & electrical drain connection	Provides primary heat transfer path and completes drain circuit; must be insulated per safety standards

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	~0.51 (19nC/37nC) - Minimizes Miller-induced switching delay and improves controllability during hard switching
Fully characterized C_oss vs. V_DS	120pF @ 120V, 1520pF @ 1V - Enables precise calculation of turn-on loss and snubber sizing across full operating range
Soft-recovery body diode	Q_rr = 0.8–1.2µC, t_rr = 150–220ns - Reduces voltage spike and EMI during freewheeling in forward and LLC converters
Avalanche-rated construction	IAS = 14A, EAS = 260mJ - Eliminates need for external clamping in active-clamp and flyback designs with known inductance
High-temperature R_DS(on) stability	Normalized on-resistance ≤2.5× at T_J = 175°C - Maintains predictable conduction loss across industrial temperature range

Applications

Telecom 48V DC-DC Converters

Active-Clamp Forward Converters

Use Scenario: Primary-side switch in 48V input, 12V/20A isolated telecom power supply operating at 200–500kHz.

IC Role / Device Role / Timing Role: High-side switching element handling 14A peak drain current with 150V blocking; synchronized to controller's gate drive signal.

Use Value: Low Q_g and C_oss,eff reduce total switching loss to <1.8W at 300kHz, improving efficiency by ≥1.2% over legacy 0.12Ω MOSFETs.

Use Scenario: Main switch in 300W active-clamp forward converter for server VRM auxiliary rails.

IC Role / Device Role / Timing Role: Primary switch conducting during main power transfer; clamp switch recycles magnetizing energy during reset phase.

Use Value: 260mJ E_AS rating ensures reliable clamp energy absorption without derating, enabling compact transformer design with higher flux density.

Industrial Motor Drive Inverters

UPS Output Stage Switches

Use Scenario: Half-bridge leg in 1kW BLDC motor drive operating at 10–20kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-side switching FET in three-phase inverter bridge; body diode conducts during shoot-through protection intervals.

Use Value: Soft-recovery diode limits V_DS overshoot to <210V during 100A/µs commutation, reducing snubber size and stress on gate driver.

Use Scenario: Output H-bridge switch in online UPS delivering clean 230VAC sine wave from 380VDC bus.

IC Role / Device Role / Timing Role: Bidirectional switching element in full-bridge inverter stage; handles bidirectional current during regeneration.

Use Value: 17A continuous current at T_C = 100°C supports 1.5× surge rating for battery backup load transients without thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50FP	500V V_DSS, 0.24Ω R_DS(on), 45nC Q_g, TO-220FP package	Higher voltage rating but higher conduction and switching loss at 150V operation	Preferred only where 500V isolation or enhanced surge immunity is required beyond 150V system needs
IXTH24N50L	500V V_DSS, 0.22Ω R_DS(on), 62nC Q_g, TO-247 package	Superior thermal performance (R_θJC = 0.45°C/W) but larger footprint and higher gate drive demand	Selected when >200W continuous dissipation or >175°C junction operation is mandatory

Compared with STP20NM50FP and IXTH24N50L, IRFS23N15D offers optimal balance of low R_DS(on), moderate Q_g, and proven 150V avalanche ruggedness-making it the most cost-effective and thermally efficient choice for 48–60V input SMPS where voltage headroom is constrained.

Availability

IRFS23N15D is available at Aetrix Electronics and suitable for telecom DC-DC converters, active-clamp forward power supplies, and industrial motor drive inverters requiring stable component supply and long-term production continuity.

Supply support for IRFS23N15D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon-based power devices and wide-bandgap technologies.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability switching in telecom, server, and industrial power conversion-emphasizing low gate charge, rugged avalanche performance, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFS23N15D supports 17A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within its 136W P_D limit at 25°C case temperature.

Does the body diode support synchronous rectification in DC-DC converters?

Yes-the integrated body diode has t_rr = 150–220ns and Q_rr = 0.8–1.2µC at dI/dt = 100A/µs, enabling use in quasi-resonant and synchronous forward topologies. However, external Schottky diodes are recommended for >300kHz operation due to limited softness at high dI/dt.

Is the TO-220AB package electrically isolated?

No-the metal tab (Pin 4) is internally connected to the drain terminal. Electrical isolation from heatsink is mandatory unless the drain node is at chassis ground potential. Recommended insulation materials include mica washers or silicone pads rated for ≥500V dielectric strength.

How does the effective output capacitance (C_oss,eff) differ from static C_oss?

C_oss,eff = 210pF is measured dynamically from V_DS = 0V to 120V and represents the energy-equivalent capacitance governing turn-on loss. Static C_oss = 260pF is measured at fixed V_DS = 25V and is unsuitable for loss calculation-C_oss,eff is the correct value for snubber and ZVS design.

IRFS23N15D Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS23N15D FAQ

1.How can I place an order for IRFS23N15D through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS23N15D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS23N15D reliable?

The price and inventory of IRFS23N15D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS23N15D is usually 5 days.

3.What payment methods are accepted for IRFS23N15D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS23N15D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS23N15D?

IRFS23N15D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS23N15D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS23N15D?

For technical support, including IRFS23N15D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS23N15D requirements.

6.How does Aetrix verify that IRFS23N15D is sourced from the original manufacturer or authorized distributors?

All IRFS23N15D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS23N15D meets industry standards.

7.What is the process for return or replacement of IRFS23N15D?

All IRFS23N15D units undergo pre-shipment inspection (PSI). If there is an issue with IRFS23N15D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS23N15D part is unused and in its original packaging.

Return procedure for IRFS23N15D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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