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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS23N15DTRLP

Name: IRFS23N15DTRLP
Brand: Infineon Technologies
SKU: IRFS23N15DTRLP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS23N15DTRLP

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS23N15DTRLP.pdf

Description:: MOSFET N-CH 150V 23A D2PAK

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Product details

Overview

IRFS23N15DTRLP from Infineon Technologies is a 150 V, 23 A, 0.090 Ω R_DS(on) N-channel enhancement-mode Power MOSFET in TO-220AB package, optimized for high-frequency DC-DC converters and active-clamp forward topologies. It features low Q_gd (19 nC typical), 210 pF effective C_oss, and 260 mJ single-pulse avalanche energy - enabling robust switching in telecom 48 V input power supplies.

For engineers reviewing the IRFS23N15DTRLP datasheet, IRFS23N15DTRLP pinout, IRFS23N15DTRLP application, or IRFS23N15DTRLP equivalent, key selection criteria include gate charge profile (Q_g = 37 nC typ.), diode recovery performance (t_rr = 150 ns typ.), thermal resistance (R_θJC = 1.1 °C/W), and avalanche ruggedness under unclamped inductive switching.

Technical Context

This HEXFET device uses planar vertical DMOS structure with optimized charge balance for fast turn-on/turn-off and reduced Miller effect. Its fully characterized C_oss (120–1520 pF range vs. V_DS) and effective C_oss (210 pF) simplify snubberless design in resonant and active-clamp topologies.

The body diode exhibits low V_SD (1.3 V at 14 A, 25 °C) and controlled reverse recovery (Q_rr = 0.8 µC typ.), supporting synchronous rectification and bidirectional current handling in half-bridge configurations without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - supports 48 V input DC-DC with ≥3× voltage margin against transients
R_DS(on) max	0.090 Ω @ V_GS = 10 V, I_D = 14 A - enables <1.5 W conduction loss at 14 A continuous
Q_g typ.	37 nC - determines gate drive power requirement and switching speed in 100–500 kHz designs
C_oss,eff	210 pF - defines hard-switching energy loss (½ × C_oss × V_DS²) during turn-on
E_AS	260 mJ - ensures reliable operation under unclamped inductive load faults up to 14 A
t_r/t_f	32 ns / 8.4 ns - supports clean edge control in high dv/dt environments (≤4.1 V/ns diode recovery)
R_θJC	1.1 °C/W - allows 136 W power dissipation with ≤150 °C junction rise above 25 °C case

Pinout & Package

IRFS23N15DTRLP is housed in a TO-220AB package with isolated tab (drain-connected), standard mounting hole, and 1.1 N·m screw torque rating. The case serves as the drain terminal and provides direct thermal path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate	High-impedance control input requiring <37 nC charge for full enhancement; sensitive to ESD
2 (Tab + Lead)	Drain	Main high-side power node; electrically connected to metal tab for thermal and electrical conduction
3 (Lead)	Source	Power return and gate reference node; forms common source for half-bridge layout
4 (Lead)	Drain	Secondary drain connection for enhanced current sharing and lower parasitic inductance in high-current paths

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	19/37 nC - reduces Miller-induced shoot-through risk in bridge circuits
Fully characterized C_oss vs. V_DS	120–1520 pF over 1–120 V - enables accurate soft-switching timing prediction
Avalanche-rated	260 mJ single-pulse - eliminates need for external clamping in flyback/forward reset paths
Lead-free (PbF)	RoHS-compliant finish with soldering tolerance up to 300 °C for 10 s - supports lead-free reflow and manual assembly
Enhanced diode dV/dt immunity	4.1 V/ns rated - prevents false turn-on during fast inductive commutation

Applications

Telecom DC-DC Converters

Active-Clamp Forward Converters

Use Scenario: 48 V input, 12 V/20 A output telecom power supply operating at 250 kHz with tight efficiency targets.

IC Role / Device Role / Timing Role: Primary-side switch controlling energy transfer; handles 150 V blocking and 23 A peak drain current.

Use Value: Low Q_gd and 210 pF C_oss,eff reduce switching losses by >18% versus legacy 0.12 Ω MOSFETs at same frequency.

Use Scenario: Isolated 36–75 V input, 5 V/40 A server VRM using active-clamp reset to recover leakage energy.

IC Role / Device Role / Timing Role: Main switch with synchronous clamp FET; operates in ZVS region due to controlled C_oss discharge.

Use Value: Fully characterized C_oss curve enables precise clamp capacitor sizing for <5% voltage overshoot during reset.

Industrial SMPS

UPS Inverter Stages

Use Scenario: 3-phase rectified 400 V bus powering 24 V/15 A industrial control rail via phase-shifted full-bridge.

IC Role / Device Role / Timing Role: High-side leg switch enduring repetitive 150 V transient spikes and 17 A continuous current at 100 °C case.

Use Value: 260 mJ E_AS and 14 A I_AR allow safe operation without snubbers during line surges or short-circuit events.

Use Scenario: Online UPS with bidirectional 48 V battery interface requiring reverse conduction capability during battery charging.

IC Role / Device Role / Timing Role: Half-bridge leg switch leveraging integrated body diode for freewheeling and regenerative current paths.

Use Value: 1.3 V V_SD and 150 ns t_rr minimize conduction loss and diode switching loss during 10 kHz PWM transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB23N15DPbF	TO-262 package; identical die, higher R_θJA (40 °C/W vs. 62 °C/W), no isolated tab	Better suited for PCB-mounted, non-heatsinked medium-power applications	Select when board space permits larger footprint and thermal coupling to PCB copper is primary cooling path
STP22NF15	150 V, 22 A, 0.095 Ω; higher Q_g (52 nC), no published C_oss,eff or avalanche data	Limited to non-avalanche-critical, lower-frequency (<100 kHz) SMPS	Choose only if cost sensitivity outweighs need for documented hard-switching robustness and high-frequency optimization

Compared with IRFB23N15DPbF and STP22NF15, IRFS23N15DTRLP delivers superior thermal management via isolated TO-220AB tab, verified avalanche ruggedness for fault-tolerant designs, and application-specific C_oss characterization critical for high-efficiency DC-DC topologies above 200 kHz.

Availability

IRFS23N15DTRLP is available at Aetrix Electronics and suitable for telecom DC-DC converters, active-clamp forward power supplies, and industrial SMPS requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for IRFS23N15DTRLP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power conversion in telecom infrastructure, server PSUs, and industrial automation systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IRFS23N15DTRLP supports 17 A continuous drain current at T_C = 100 °C with V_GS = 10 V, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and silicon die, not gate drive capability - actual usable current depends on heatsink design and ambient conditions.

Does this MOSFET have a fully characterized body diode for synchronous rectification?

Yes - the datasheet specifies V_SD = 1.3 V (max) at I_S = 14 A and T_J = 25 °C, t_rr = 150–220 ns, and Q_rr = 0.8–1.2 µC under defined di/dt and temperature conditions. These parameters are measured and published, enabling accurate loss modeling in synchronous rectifier stages.

Can IRFS23N15DTRLP replace IRFS23N15D in existing designs?

Yes - IRFS23N15DTRLP is the lead-free (PbF) version of IRFS23N15D, with identical electrical specifications, pinout, package dimensions, and thermal performance. The "TRLP" suffix denotes RoHS compliance and matte tin plating; no layout or thermal redesign is required for drop-in replacement.

What is the recommended gate resistor value for 300 kHz operation in a half-bridge?

For 300 kHz switching with 10 V gate drive, a 5.1 Ω gate resistor is validated in the datasheet's dynamic test conditions (td(on)/tr/tf measured with R_G = 5.1 Ω). This value balances switching speed (32 ns rise time) against ringing suppression and driver stress - lower values increase EMI risk; higher values degrade efficiency.

IRFS23N15DTRLP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS23N15DTRLP FAQ

1.How can I place an order for IRFS23N15DTRLP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS23N15DTRLP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS23N15DTRLP reliable?

The price and inventory of IRFS23N15DTRLP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS23N15DTRLP is usually 5 days.

3.What payment methods are accepted for IRFS23N15DTRLP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS23N15DTRLP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS23N15DTRLP?

IRFS23N15DTRLP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS23N15DTRLP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS23N15DTRLP?

For technical support, including IRFS23N15DTRLP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS23N15DTRLP requirements.

6.How does Aetrix verify that IRFS23N15DTRLP is sourced from the original manufacturer or authorized distributors?

All IRFS23N15DTRLP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS23N15DTRLP meets industry standards.

7.What is the process for return or replacement of IRFS23N15DTRLP?

All IRFS23N15DTRLP units undergo pre-shipment inspection (PSI). If there is an issue with IRFS23N15DTRLP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS23N15DTRLP part is unused and in its original packaging.

Return procedure for IRFS23N15DTRLP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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