Infineon Technologies IRFS3004-7PPBF

Overview

IRFS3004-7PPBF from Infineon Technologies is a 40 V, 240 A (package-limited), N-channel D2PAK-7L HEXFET® Power MOSFET with 0.90 mΩ typical R_DS(on), optimized for high-current synchronous rectification and hard-switched DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IRFS3004-7PPBF datasheet, IRFS3004-7PPBF pinout, IRFS3004-7PPBF application, or IRFS3004-7PPBF equivalent, key selection criteria include its 240 A package-limited continuous current, 160 nC total gate charge, 2.0 Ω internal gate resistance, enhanced body diode dV/dt and dI/dt capability, and SOA-rated avalanche energy up to 380 mJ.

Technical Context

This device operates as a high-side or low-side switch in high-frequency (>100 kHz) DC-DC topologies, leveraging its ultra-low R_DS(on) and fast switching (tr = 240 ns, tf = 160 ns) to minimize conduction and switching losses. Its fully characterized SOA includes thermal-limited avalanche (EAS = 380 mJ) and unclamped inductive switching robustness.

The integrated body diode supports synchronous rectification with trr = 49 ns (TJ = 25°C), Qrr = 37 nC, and IRRM = 3.2 A - enabling efficient zero-voltage switching transitions. Gate drive requirements are defined by Qgs = 42 nC, Qgd = 65 nC, and V_GS(th) = 2.0–4.0 V, ensuring compatibility with standard 10 V gate drivers.

Key Specifications

Pinout & Package

D2PAK-7L (TO-263-7) surface-mount package with exposed drain pad for low-thermal-resistance PCB mounting (R_θJC = 0.40 °C/W). Seven terminals: three parallel source pins (S1–S3), two parallel gate pins (G1–G2), one drain (D), and one Kelvin source (KS) for accurate gate-drive referencing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Compared with IXFN300N04S4 and STH315N10F7-2, IRFS3004-7PPBF uniquely balances ultra-low R_DS(on), moderate Q_g, Kelvin source for timing accuracy, and fully specified avalanche robustness - making it optimal for high-efficiency, high-reliability 40 V synchronous rectification.

Availability

IRFS3004-7PPBF is available at Aetrix Electronics and suitable for server voltage regulator modules, telecom 48 V DC-DC converters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRFS3004-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's TRENCHSTOP™ and HEXFET® power MOSFET product line, engineered specifically for high-current, high-frequency switching in datacenter, telecom, and industrial power conversion systems.

FAQ

What is the maximum continuous drain current for IRFS3004-7PPBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 280 A (silicon-limited), as specified in the Absolute Maximum Ratings table. However, the package-limited rating remains 240 A regardless of temperature, governed by bond wire current capacity and leadframe thermal saturation - this is the limiting value for sustained operation.

Does IRFS3004-7PPBF support Kelvin source connection, and how is it used in circuit design?

Yes, the D2PAK-7L package includes a dedicated Kelvin source (KS) terminal. It must be connected directly to the gate driver's source reference node - separate from the main source return path - to eliminate voltage drop error in gate drive loop, ensuring accurate V_GS control during high-di/dt switching events.

Can IRFS3004-7PPBF be used in parallel configurations, and what layout considerations apply?

Yes, it supports paralleling due to positive R_DS(on) temperature coefficient and matched threshold voltage. Layout requires symmetrical gate routing with individual 2.7 Ω gate resistors, mirrored source/drain copper areas, and shared thermal pad under all devices to ensure current sharing within ±5% across 4-device arrays.

What is the significance of C_oss eff. (TR) = 2650 pF versus standard C_oss = 2020 pF in switching performance?

C_oss eff. (TR) is a time-equivalent capacitance derived from actual V_DS rise time measurements (0–80% V_DSS). At 2650 pF, it reflects real-world Miller-effect delay and impacts dead-time calculation more accurately than static C_oss, especially in high-dv/dt applications like GaN-driven synchronous buck stages.