Infineon Technologies IRFS3004PBF

Overview

IRFS3004PBF from Infineon (formerly International Rectifier) is a 40V, 340A silicon-limited N-channel HEXFET Power MOSFET in TO-220AB package, optimized for high-current synchronous rectification and hard-switched SMPS topologies. It features 1.4 mΩ typical R_DS(on), 160 nC total gate charge, and enhanced body diode dV/dt/dI/dt ruggedness for reliable operation in UPS and high-frequency DC-DC converters.

For engineers reviewing the IRFS3004PBF datasheet, IRFS3004PBF pinout, IRFS3004PBF application, or IRFS3004PBF equivalent, key selection criteria include continuous drain current rating at elevated case temperature, avalanche energy capability (340 mJ), SOA compliance under unclamped inductive switching, and thermal resistance (R_θJC = 0.40 °C/W) for heatsink-limited designs.

Technical Context

This MOSFET employs planar V-groove silicon technology with optimized cell pitch and trench-assisted source metallization to achieve ultra-low on-resistance while maintaining robust avalanche performance. Its gate threshold voltage (2.0–4.0 V) and 2.2 Ω internal gate resistance support stable drive in high-di/dt environments.

The device integrates an intrinsic body diode with 27 ns reverse recovery time (T_J = 25°C), 18 nC Q_rr, and 1.2 A I_RRM, enabling efficient freewheeling in synchronous buck stages without external Schottky supplementation.

Key Specifications

Pinout & Package

IRFS3004PBF uses a TO-220AB package with isolated tab (drain-connected), standard lead spacing (2.54 mm), and screw-mount compatible flange. Thermal pad is electrically connected to drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Compared with STL220N4F7AG and IXFH320N04S4, IRFS3004PBF delivers the highest silicon-limited current (340 A) in a cost-optimized through-hole package with best-in-class R_θJC (0.40 °C/W), making it optimal for thermally demanding, high-volume industrial power supplies where mechanical robustness and heatsink compatibility are mandatory.

Availability

IRFS3004PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and high-speed power switching circuits requiring stable component supply across multi-year production cycles.

Supply support for IRFS3004PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with core expertise in silicon and wide-bandgap power devices.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-current, high-ruggedness switching in enterprise power infrastructure, renewable energy inverters, and mission-critical backup systems.

FAQ

What is the maximum allowable case temperature for continuous 340 A operation?

The 340 A rating is silicon-limited at T_C = 25°C. At T_C = 100°C, continuous current drops to 240 A per the derating curve in Figure 9. Sustained 340 A requires active cooling to maintain case temperature ≤45°C, verified via thermal simulation using R_θJC = 0.40 °C/W and measured heatsink resistance.

Does IRFS3004PBF support paralleling without external gate resistors?

No-gate resistance mismatch causes current imbalance. Each device requires individual 2.2–4.7 Ω gate resistors to equalize turn-on timing and suppress oscillation. Layout symmetry (identical trace length/inductance) is mandatory; mismatch >5% leads to >20% current skew at 300 A.

How does its body diode performance compare to discrete Schottky alternatives?

At 195 A, V_SD = 1.3 V and trr = 27 ns exceed most 45 V Schottkys (typically V_F = 0.55 V but trr > 50 ns). The integrated diode eliminates layout parasitics and cost of external components but trades 0.75 V higher forward drop for superior ruggedness and temperature stability up to 175°C junction.

Is the TO-220AB package suitable for automated optical inspection (AOI) after reflow?

Yes-the TO-220AB's coplanar leads and defined solder fillet geometry meet IPC-A-610 Class 2 criteria for AOI. However, the isolated drain tab must be masked during stencil printing to prevent bridging; recommended aperture ratio is 0.65 for 100 µm thick stencil.