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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS3006PBF

Name: IRFS3006PBF
Brand: Infineon Technologies
SKU: IRFS3006PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS3006PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS3006PBF.pdf

Description:: MOSFET N-CH 60V 195A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFS3006PBF from Infineon Technologies is a 60 V, 2.0 mΩ (typ), 270 A (silicon-limited) N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK package, optimized for high-current synchronous rectification and hard-switched DC-DC conversion in industrial SMPS and UPS systems.

For engineers reviewing the IRFS3006PBF datasheet, IRFS3006PBF pinout, IRFS3006PBF application, or IRFS3006PBF equivalent, key selection criteria include its 2.5 mΩ max R_DS(on), 200–300 nC total gate charge, 170 A body diode current rating, 44 ns reverse recovery time, and avalanche-rated 300 mJ single-pulse energy - critical for high-efficiency, high-reliability power stage design.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted source metallization to achieve low on-resistance while maintaining robust unclamped inductive switching (UIS) capability. Its body diode exhibits enhanced dV/dt and dI/dt ruggedness (up to 1360 A/µs), enabling reliable operation in synchronous buck and LLC resonant topologies without external Schottky clamping.

The device features fully characterized dynamic parameters including C_{oss eff.(TR)} = 1920 pF (time-related) and C_{oss eff.(ER)} = 1480 pF (energy-related), supporting accurate loss modeling in >100 kHz switching applications. Thermal resistance R_θJC is 0.4 °C/W, enabling high-power density mounting on copper-clad PCBs or heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche; supports 48 V bus designs with 20 % margin.
R_DS(on) (typ/max)	2.0 / 2.5 mΩ - Enables <1.5 W conduction loss at 170 A, reducing thermal load in high-current paths.
I_D (silicon-limited)	270 A @ T_C = 25°C - Sets theoretical current ceiling before thermal runaway under ideal cooling.
Q_g (typ/max)	200 / 300 nC - Determines gate driver power requirement and switching speed trade-off in 100–500 kHz converters.
E_AS	300 mJ - Single-pulse avalanche energy rating ensures survivability during transient overvoltage events in inductive loads.
t_rr	44 ns @ T_J = 25°C - Fast body diode recovery minimizes shoot-through risk and commutation loss in synchronous rectifiers.
R_θJC	0.4 °C/W - Enables direct case-to-heatsink thermal path; 100 W dissipation raises junction only 40°C above case.

Pinout & Package

IRFS3006PBF uses the surface-mount D2PAK (TO-262) package with exposed drain pad for low-inductance, high-current routing and thermal conduction. The package measures 10.16 × 15.88 mm with 2.54 mm lead pitch and is RoHS-compliant and lead-free.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal (connected to exposed metal tab)	Primary heat sink interface and high-side/lower-side switch node connection; requires soldered thermal pad.
Source	Reference node for gate drive and current sensing	Low-impedance return path; used for Kelvin-source sensing in precision current monitoring configurations.
Gate	Control input for channel conduction	High-impedance MOS control node; requires <2.7 Ω series resistance to damp ringing during fast switching.

Key Features

Feature	Design Value
Enhanced body diode dV/dt and dI/dt capability	Rated for 1360 A/µs di/dt and high dv/dt immunity - eliminates need for snubbers in hard-switched PFC stages.
Full avalanche SOA characterization	Guaranteed 300 mJ single-pulse E_AS and 10 mJ repetitive E_AR - enables robust operation in motor drives and UPS inverters.
Low C_{oss eff.(TR)} and C_{oss eff.(ER)}	1920 pF (time-related) and 1480 pF (energy-related) - improves light-load efficiency and reduces turn-off loss in ZVS circuits.
Lead-free and RoHS-compliant construction	Meets IPC-J-STD-020D reflow profile up to 260°C peak - compatible with standard SMT assembly lines.
Thermally enhanced D2PAK package	R_θJC = 0.4 °C/W - allows >150 W continuous power dissipation with forced-air cooling on 2 oz copper.

Applications

Server VRM Power Stage

Industrial UPS Inverter

Use Scenario: High-density 48 V input, 1 V/300 A output multiphase buck converter in AI accelerator servers.

IC Role / Device Role / Timing Role: Lower-side synchronous rectifier MOSFET in interleaved phase-legs, switching at 500 kHz with 30 ns dead-time.

Use Value: 2.0 mΩ R_DS(on) reduces conduction loss by 35 % vs. legacy 3.5 mΩ parts, lowering junction temperature rise by 22 °C at full load.

Use Scenario: Bidirectional DC-AC inverter stage in 10 kVA online UPS with battery backup and zero-transfer-time switchover.

IC Role / Device Role / Timing Role: High-current switching element in H-bridge output stage, handling 170 A peak inverter current with 10 µs overcurrent response.

Use Value: 300 mJ E_AS and 170 A body diode rating ensure fault ride-through during grid transients and short-circuit events without desaturation protection.

Telecom Rectifier Module

EV Onboard Charger PFC

Use Scenario: 3 kW front-end AC-DC rectifier with active clamp forward topology for 5G base station power systems.

IC Role / Device Role / Timing Role: Primary-side switch operating in discontinuous conduction mode (DCM) at 100–200 kHz with 60 V clamp voltage.

Use Value: 60 V V_DSS and 2.5 mΩ max R_DS(on) enable >96.5 % efficiency at 50 % load while meeting IEC 61000-4-5 surge immunity requirements.

Use Scenario: Boost PFC stage in 11 kW OBC for Level 2 EV charging, operating at 65 kHz with 400 V DC-link.

IC Role / Device Role / Timing Role: High-side boost switch subjected to repetitive 170 A inductor current peaks and 100 V overshoot during line dips.

Use Value: 44 ns t_rr and 1360 A/µs dI/dt rating suppress voltage spikes during diode commutation, eliminating need for external RC snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 60 V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V, 1.8 mΩ typ R_DS(on), 220 A ID, DFN 8×8 package; lower Q_g (160 nC) but no avalanche rating.	Suitable for space-constrained, air-cooled telecom rectifiers where avalanche stress is absent.	Select when footprint size and gate drive loss dominate; avoid in UPS/motor drive where UIS capability is mandatory.
IXFH300N06T2	60 V, 2.1 mΩ typ R_DS(on), 300 A ID, TO-247 package; higher R_θJA (40 °C/W) but 450 mJ E_AS.	Better suited for chassis-mounted, low-frequency (<100 kHz) industrial inverters requiring maximum ruggedness.	Prefer for high-temperature ambient (>85 °C) or infrequent high-energy fault conditions; larger footprint and higher cost.

Compared with STL220N6F7 and IXFH300N06T2, IRFS3006PBF delivers optimal balance of low R_DS(on), moderate gate charge, proven avalanche reliability, and D2PAK manufacturability - making it the preferred choice for volume production of 100–300 kHz SMPS with stringent thermal and fault-tolerance requirements.

Availability

IRFS3006PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply (UPS) inverters, and high-speed power switching in industrial motor drives requiring stable component supply and long-term lifecycle support.

Supply support for IRFS3006PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

IRFS3006PBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-current, high-frequency power conversion in server VRMs, telecom rectifiers, and renewable energy inverters where low conduction loss and rugged switching behavior are essential.

FAQ

What is the maximum continuous drain current for IRFS3006PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 191 A, determined by silicon-limited conduction and thermal derating. This value assumes proper PCB copper area (≥1"² FR-4) and adequate airflow; exceeding it risks thermal runaway due to R_DS(on) increase with junction temperature.

Does IRFS3006PBF have a specified body diode reverse recovery charge (Q_rr)?

Yes - Q_rr is specified as 63 nC at T_J = 25°C and 77 nC at T_J = 125°C, measured with I_F = 170 A, dI/dt = 100 A/µs, and V_R = 51 V. These values are critical for calculating commutation loss in synchronous rectifier designs and must be included in SPICE simulations.

Can IRFS3006PBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (0.07 V/°C) enables natural current sharing. Successful paralleling requires matched gate drive impedance (<1 Ω difference), symmetrical PCB layout, and Kelvin-source connections to minimize loop inductance imbalance and oscillation risk.

Is the D2PAK package of IRFS3006PBF compatible with standard reflow profiles?

Yes - the lead-free construction complies with IPC-J-STD-020D, supporting peak reflow temperatures up to 260°C for 10 seconds. Recommended thermal profile includes ramp rate ≤3°C/s, soak at 150–200°C for 60–120 s, and time above liquidus (217°C) of 60–90 s with controlled cooling.

IRFS3006PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 170A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 300 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8970 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS3006PBF FAQ

1.How can I place an order for IRFS3006PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS3006PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS3006PBF reliable?

The price and inventory of IRFS3006PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS3006PBF is usually 5 days.

3.What payment methods are accepted for IRFS3006PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS3006PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS3006PBF?

IRFS3006PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS3006PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS3006PBF?

For technical support, including IRFS3006PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS3006PBF requirements.

6.How does Aetrix verify that IRFS3006PBF is sourced from the original manufacturer or authorized distributors?

All IRFS3006PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS3006PBF meets industry standards.

7.What is the process for return or replacement of IRFS3006PBF?

All IRFS3006PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS3006PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS3006PBF part is unused and in its original packaging.

Return procedure for IRFS3006PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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