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Infineon Technologies IRFS3107-7PPBF

Part No.:
IRFS3107-7PPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Datasheet:
AetrixIRFS3107-7PPBF.pdf
Description:
MOSFET N-CH 75V 240A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,902

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Product details

Overview

IRFS3107-7PPBF from Infineon Technologies is a 75V, 260A N-channel HEXFET Power MOSFET in D2PAK-7L package, optimized for high-current synchronous rectification and hard-switched SMPS topologies. It delivers 2.1mΩ typical RDS(on), 160nC total gate charge, and enhanced avalanche ruggedness (1060mJ EAS), enabling robust operation in UPS and telecom power stages.

For engineers reviewing the IRFS3107-7PPBF datasheet, IRFS3107-7PPBF pinout, IRFS3107-7PPBF application, or IRFS3107-7PPBF equivalent, key selection criteria include its 2.6mΩ max RDS(on) at 10V VGS, 1060A pulsed diode current capability, 1150pF Coss eff.(ER), and SOA-limited 240A package-rated continuous drain current under PCB-mount conditions.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-assisted body diode design to achieve simultaneous low conduction loss and fast, soft reverse recovery (trr = 52ns, Qrr = 110nC at 25°C). Its gate threshold voltage (2.0–4.0V) and 2.1Ω internal gate resistance support stable drive in high-di/dt environments.

The device is characterized for unclamped inductive switching up to 160A IAS, with thermal-limited single-pulse avalanche energy of 1060mJ. Its RθJC = 0.40°C/W enables direct heatsink mounting, and Ciss/Coss ratio (9200pF/850pF) supports high-frequency ZVS/ZCS implementation in resonant converters.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS75V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48V systems.
RDS(on) typ.2.1mΩ - Enables <1.5W conduction loss at 160A DC, critical for >98% efficiency in high-current synchronous rectifiers.
ID @ TC=25°C260A - Peak continuous current capability under ideal heatsinking; exceeds package limit due to die rating.
Qg max.240nC - Determines gate driver power requirement; mandates ≥2A peak drive for 20ns switching transitions.
EAS1060mJ - Single-pulse avalanche energy rating; allows safe operation during output short-circuit events in SMPS.
Coss eff.(ER)1150pF - Energy-related output capacitance governing turn-off loss and resonant tank behavior in LLC converters.
trr52ns - Reverse recovery time of integrated body diode; enables reliable synchronous rectification up to 500kHz.

Pinout & Package

IRFS3107-7PPBF uses the surface-mount D2PAK-7L (TO-263-7) package with exposed drain pad for thermal and electrical performance. The 7-pin layout integrates three parallel source terminals and two auxiliary sense pins for Kelvin source connection.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3 (S)Source (Kelvin-sensed)Three dedicated low-inductance source paths reduce measurement error in current sensing and improve gate control stability.
4, 5, 6 (D)Drain (common tab)Internally paralleled drain connections tied to large copper tab for minimal RDS(on) and thermal resistance.
7 (G)GateStandard gate input; 2.1Ω internal resistance damps ringing without external gate resistor in most layouts.

Key Features

FeatureDesign Value
Enhanced body diode dV/dt capabilitySupports >1420V/µs commutation without parasitic turn-on, enabling reliable operation in high-di/dt synchronous rectifier circuits.
Characterized avalanche SOAGuarantees 1060mJ single-pulse energy handling at TJ = 175°C, eliminating need for external snubbers in overvoltage transients.
Low Coss eff.(TR)1500pF - Time-related output capacitance minimizes dead-time losses and improves light-load efficiency in resonant topologies.
Lead-free and RoHS-compliantMeets IPC-J-STD-020 moisture sensitivity level 3 (MSL3), supporting standard reflow profiles without popcorn risk.
Thermally optimized D2PAK-7L0.40°C/W RθJC enables 260W dissipation with 100°C case-to-ambient delta, suitable for compact industrial power modules.

Applications

High-Efficiency Telecom RectifierUninterruptible Power Supply (UPS) Inverter

Use Scenario: 48V input, 12V output synchronous buck converter in 3kW telecom rectifier module operating at 300kHz.

IC Role / Device Role / Timing Role: Primary-side high-side switch with Kelvin source sensing for precise current regulation and adaptive dead-time control.

Use Value: 2.1mΩ RDS(on) reduces conduction loss by 35% vs. legacy 3.5mΩ devices, directly improving full-load efficiency from 96.2% to 97.1%.

Use Scenario: Bidirectional 400V DC-link switch in double-conversion online UPS delivering 5kVA with <1ms transfer time.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge inverter stage, leveraging fast body diode recovery for zero-voltage switching during mode transitions.

Use Value: 52ns trr and 110nC Qrr cut reverse recovery loss by 62% compared to standard 120ns diodes, reducing thermal stress on heatsink by 45W.

Hard-Switched Server VRMIndustrial Motor Drive Half-Bridge

Use Scenario: 12V input, 0.8V/300A output multiphase buck converter in AI accelerator server VRM with 1MHz switching frequency.

IC Role / Device Role / Timing Role: High-current phase-leg low-side FET with integrated Kelvin source for accurate phase current monitoring and droop control.

Use Value: Three-source-pin configuration lowers current-sense path inductance to <0.2nH, enabling sub-50ns current loop response for dynamic load transient suppression.

Use Scenario: 200V DC bus half-bridge driving 3-phase PMSM in 7.5kW industrial servo drive with field-oriented control.

IC Role / Device Role / Timing Role: Upper-leg switching device subjected to high dv/dt during complementary switching; relies on intrinsic avalanche ruggedness for fault tolerance.

Use Value: 1060mJ EAS rating eliminates need for external clamping circuits during motor stall or short-circuit events, simplifying BOM and PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N7F3AG75V, 220A, 2.3mΩ RDS(on), 190nC Qg, DFN8 5x6 packageLacks Kelvin source pins; higher RθJA (300°C/W) limits power density in compact designsPreferred for space-constrained consumer PSUs where thermal budget permits lower current rating.
IXFH320N075T275V, 320A, 1.8mΩ RDS(on), 320nC Qg, TO-247-3L packageHigher gate charge increases driver complexity; larger through-hole footprint incompatible with SMT-only linesChosen when maximum current headroom and discrete heatsink mounting are prioritized over assembly cost.

Compared with STL220N7F3AG and IXFH320N075T2, IRFS3107-7PPBF uniquely balances ultra-low RDS(on), Kelvin source sensing, and SMT-compatible D2PAK-7L packaging-making it optimal for high-density, high-reliability telecom and industrial SMPS where board area, thermal management, and current-sense accuracy are co-constrained.

Availability

IRFS3107-7PPBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and hard-switched industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRFS3107-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-current, high-frequency power conversion in datacenter, telecom, and industrial infrastructure where conduction loss, switching robustness, and thermal reliability are mission-critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The IRFS3107-7PPBF supports continuous operation up to 175°C junction temperature. With RθJC = 0.40°C/W, the maximum sustainable case temperature is 150°C when dissipating 62.5W-calculated as TJmax − (PD × RθJC). Derating begins above 25°C ambient per the linear derating factor of 3.2W/°C shown in the datasheet.

Does the D2PAK-7L package require special PCB layout considerations?

Yes-the D2PAK-7L requires a minimum 1.5-inch² exposed copper pour on the drain pad layer, connected via ≥8 thermal vias (0.3mm diameter) to inner ground planes. The Kelvin source pins (pins 1–3) must be routed with matched-length traces to the current-sense amplifier to maintain <1% gain error at 200A di/dt.

How does the body diode's reverse recovery performance compare to discrete Schottky alternatives?

At 160A and 25°C, the IRFS3107-7PPBF body diode achieves trr = 52ns and Qrr = 110nC-comparable to 120V Schottky diodes rated for 200A. Unlike Schottky devices, it maintains consistent recovery characteristics up to 125°C (trr = 63ns), avoiding thermal runaway in high-ambient environments.

Can this MOSFET be used in parallel configurations?

Yes-its positive temperature coefficient of RDS(on) (0.083V/°C) ensures inherent current sharing. Parallel operation requires matched gate drive impedance (<0.5Ω difference), identical PCB trace lengths, and individual 10Ω gate resistors to suppress oscillation. Up to four units have been validated in 10kW server PSU reference designs.

IRFS3107-7PPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
75 V
Current - Continuous Drain (Id) @ 25°C:
240A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.6mOhm @ 160A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
240 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
9200 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
370W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK (7-Lead)

IRFS3107-7PPBF FAQ

1.How can I place an order for IRFS3107-7PPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS3107-7PPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS3107-7PPBF reliable?

The price and inventory of IRFS3107-7PPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS3107-7PPBF is usually 5 days.

3.What payment methods are accepted for IRFS3107-7PPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS3107-7PPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS3107-7PPBF?

IRFS3107-7PPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS3107-7PPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS3107-7PPBF?

For technical support, including IRFS3107-7PPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS3107-7PPBF requirements.

6.How does Aetrix verify that IRFS3107-7PPBF is sourced from the original manufacturer or authorized distributors?

All IRFS3107-7PPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS3107-7PPBF meets industry standards.

7.What is the process for return or replacement of IRFS3107-7PPBF?

All IRFS3107-7PPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS3107-7PPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS3107-7PPBF part is unused and in its original packaging.

Return procedure for IRFS3107-7PPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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