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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS3107PBF

Name: IRFS3107PBF
Brand: Infineon Technologies
SKU: IRFS3107PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS3107PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS3107PBF.pdf

Description:: MOSFET N-CH 75V 195A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFS3107PBF from Infineon Technologies is a 75V, 2.5 mΩ (typ), 195A (package-limited) N-channel enhancement-mode Power MOSFET in TO-262 package, optimized for high-current synchronous rectification and hard-switched SMPS topologies where low R_DS(on), robust avalanche capability (E_AS = 370 mJ), and fast body diode recovery (t_rr = 54 ns) are critical.

For engineers reviewing the IRFS3107PBF datasheet, IRFS3107PBF pinout, IRFS3107PBF application, or IRFS3107PBF equivalent, this device is selected for high-efficiency DC-DC converters, UPS inverters, and motor drive half-bridges requiring stable conduction at >140A continuous drain current with <1.3 V body diode forward drop and <100 ns fall time under 140A load.

Technical Context

This MOSFET employs planar HEXFET architecture with optimized gate oxide and trench-assisted charge balancing to achieve simultaneous low R_DS(on) (2.5 mΩ typ) and high dV/dt ruggedness (>2.5 V/ns). Its dynamic parameters-including Q_gd = 54 nC and C_{oss eff.(TR)} = 1500 pF-are characterized for operation up to 1 MHz switching frequency in resonant and phase-shifted full-bridge designs.

The integrated body diode delivers enhanced dI/dt capability (≤1380 A/μs) and low reverse recovery charge (Q_rr = 103 nC at T_J = 25°C), enabling zero-voltage switching (ZVS) transitions without external snubbers in high-frequency LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum blocking voltage before avalanche onset; supports 48 V bus systems with 50% safety margin.
R_DS(on) (typ)	2.5 mΩ - Enables ≤0.5 W conduction loss at 140 A, reducing heatsink requirements in 1–3 kW power stages.
I_D (pkg-limited)	195 A - Sustained current rating constrained by TO-262 leadframe thermal capacity, not silicon limit.
Q_g	160–240 nC - Gate drive energy demand dictates minimum gate driver peak current ≥3 A for 25 ns turn-on.
t_rr	54 ns - Fast body diode recovery minimizes cross-conduction losses during synchronous rectification commutation.
E_AS	370 mJ - Single-pulse avalanche energy rating allows unclamped inductive switching in UPS hold-up circuits.
R_θJC	0.40 °C/W - Junction-to-case thermal resistance enables direct mounting to cold plates for >150 W dissipation.

Pinout & Package

IRFS3107PBF uses the TO-262 (ISOTOP) package: 3-pin, single-ended, through-hole mount with isolated metal tab (drain-connected). The case is electrically connected to the drain terminal and must be insulated from heatsink unless referenced to system ground.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives 10 V gate drive to fully enhance channel; threshold voltage 2.0–4.0 V ensures TTL/CMOS compatibility with 5 V logic.
Drain (D)	High-side power output	Internally bonded to metal tab; requires electrical isolation when mounted to heatsink unless drain is system ground reference.
Source (S)	Power return path	Serves as common reference for gate drive and current sensing; low-inductance layout essential to minimize V_GS ringing.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	370 mJ single-pulse E_AS enables reliable operation in unclamped inductive switching without external clamping.
Low C_{oss eff.(TR)}	1500 pF - Reduces turn-off energy loss and improves ZVS initiation margin in resonant topologies above 300 kHz.
Fast body diode recovery	t_rr = 54 ns and Q_rr = 103 nC minimize dead-time losses and prevent shoot-through in synchronous buck converters.
Lead-free construction	RoHS-compliant Pb-free plating and solderable terminations meet IPC-J-STD-020 moisture sensitivity level 1 (MSL-1).
Thermally optimized package	R_θJC = 0.40 °C/W supports >150 W continuous power dissipation with forced-air cooling on 1"² copper pad.

Applications

High-Efficiency Synchronous Rectifier

Uninterruptible Power Supply (UPS) Inverter

Use Scenario: Secondary-side rectification in 1–2 kW telecom and server PSUs operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous switch replacing Schottky diodes to reduce conduction loss and improve efficiency by ≥2%.

Use Value: 2.5 mΩ R_DS(on) and 1.3 V V_SD enable <0.8 W conduction loss at 140 A, cutting secondary-side heat generation by 65% vs. 40 V Schottky.

Use Scenario: Half-bridge inverter stage in line-interactive UPS delivering 1.5 kVA output with battery backup.

IC Role / Device Role / Timing Role: High-current switching element handling bidirectional 140 A peak load current during transfer and boost modes.

Use Value: 195 A package-limited ID and 370 mJ E_AS support safe operation during grid dropout transients without desaturation protection.

Hard-Switched Motor Drive

High-Frequency SMPS

Use Scenario: 3-phase inverter leg in industrial servo drives operating at 8–16 kHz PWM frequency.

IC Role / Device Role / Timing Role: N-channel power switch in high-side or low-side position with gate-driven bootstrap or isolated supply.

Use Value: 100 ns fall time and 99 ns t_d(off) ensure clean turn-off edge control, minimizing shoot-through risk in 12 V gate drive systems.

Use Scenario: Primary-side switch in 600 W LLC resonant converter for LED lighting drivers running at 600 kHz.

IC Role / Device Role / Timing Role: Main power switch leveraging low C_{oss eff.(ER)} = 1130 pF to maintain ZVS across full load range.

Use Value: C_{oss eff.(TR)} = 1500 pF and Q_gd = 54 nC allow reliable soft-switching down to 10% load without auxiliary circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW75NF70	R_DS(on) = 7.5 mΩ (higher), V_DSS = 70 V, TO-247 package, lower Q_g (120 nC)	Lower current density (120 A pkg-limited); better suited for space-constrained TO-247 layouts but higher conduction loss	Select when board real estate favors TO-247 and peak current ≤120 A; avoid for >140 A synchronous rectification.
IXFH70N10P	R_DS(on) = 10.5 mΩ, V_DSS = 100 V, TO-247, higher E_AS (600 mJ), slower t_rr (110 ns)	Higher voltage rating supports 72 V battery systems; slower diode limits use in >250 kHz ZVS designs	Prefer for 100 V bus applications requiring extended avalanche margin; not recommended for high-frequency synchronous rectifiers.

Compared with STW75NF70 and IXFH70N10P, IRFS3107PBF offers the lowest R_DS(on) and fastest body diode among TO-262/TO-247 alternatives, making it optimal for 48–75 V, >140 A, high-frequency SMPS where conduction loss and commutation speed dominate design trade-offs.

Availability

IRFS3107PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply inverters, and hard-switched motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRFS3107PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered for high-power switching applications demanding low on-resistance, high avalanche energy, and fast body diode performance in industrial and computing power supplies.

FAQ

What is the maximum continuous drain current for IRFS3107PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 160 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 195 A rating at 25°C case temperature, based on junction-to-case thermal resistance of 0.40 °C/W and T_Jmax = 175°C.

Can IRFS3107PBF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (0.09 V/°C for V_(BR)DSS) and matched threshold voltage (2.0–4.0 V) support stable current sharing. Designers must ensure symmetrical PCB layout, identical gate drive impedance (<2 Ω), and individual source resistors (10–20 mΩ) for dynamic balancing.

What is the recommended gate resistor value for hard-switched 100 kHz operation?

A gate resistor of 2.7 Ω is validated in the datasheet for 140 A switching at 100 kHz (Fig. 23a/b). This value balances turn-on speed (t_d(on) = 19 ns) against gate oscillation damping; values below 2 Ω increase V_GS overshoot risk, while >5 Ω extends t_f beyond 100 ns and raises switching loss.

Does IRFS3107PBF require a negative gate turn-off voltage?

No-its gate threshold voltage (2.0–4.0 V) and low gate leakage (<100 nA) allow reliable turn-off with 0 V gate drive. Negative bias is unnecessary unless operating in high-dV/dt environments (>5 V/ns) where Miller-induced false turn-on must be suppressed via active gate clamping.

IRFS3107PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 140A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9370 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 370W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS3107PBF FAQ

1.How can I place an order for IRFS3107PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS3107PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS3107PBF reliable?

The price and inventory of IRFS3107PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS3107PBF is usually 5 days.

3.What payment methods are accepted for IRFS3107PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS3107PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS3107PBF?

IRFS3107PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS3107PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS3107PBF?

For technical support, including IRFS3107PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS3107PBF requirements.

6.How does Aetrix verify that IRFS3107PBF is sourced from the original manufacturer or authorized distributors?

All IRFS3107PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS3107PBF meets industry standards.

7.What is the process for return or replacement of IRFS3107PBF?

All IRFS3107PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS3107PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS3107PBF part is unused and in its original packaging.

Return procedure for IRFS3107PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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