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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS31N20DTRL

Name: IRFS31N20DTRL
Brand: Infineon Technologies
SKU: IRFS31N20DTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS31N20DTRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS31N20DTRL.pdf

Description:: MOSFET N-CH 200V 31A D2PAK

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Product details

Overview

IRFS31N20DTRL from Infineon Technologies is a 200 V, 31 A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-frequency DC-DC converters and telecom 48 V input forward converters. It features R_DS(on) = 0.082 Ω @ V_GS = 10 V, Q_g = 70 nC (typ), and 420 mJ single-pulse avalanche energy - enabling robust switching with low conduction and gate-drive losses.

For engineers reviewing the IRFS31N20DTRL datasheet, IRFS31N20DTRL pinout, IRFS31N20DTRL application, or IRFS31N20DTRL equivalent, key selection criteria include its 200 V V_DS, 0.082 Ω on-resistance at 10 V drive, 70 nC total gate charge, 124 A pulsed drain capability, and validated avalanche ruggedness - critical for SMPS reliability under transient stress.

Technical Context

This MOSFET employs planar silicon process and optimized cell layout to achieve low R_DS(on) × Q_g figure-of-merit (FoM) of ~5.7 Ω·nC. Its fully characterized C_oss(eff) = 170 pF supports accurate snubberless design in hard-switched topologies.

The device integrates a fast, low-V_SD body diode (V_SD = 1.3 V @ I_S = 18 A, T_J = 25°C) with t_rr = 200–300 ns and Q_rr = 1.7–2.6 µC, enabling efficient synchronous rectification and reduced commutation loss in flyback and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Withstands 48 V telecom bus transients up to ±100 V without breakdown.
R_DS(on)	0.082 Ω @ V_GS = 10 V - Delivers ≤ 28 W conduction loss at 31 A DC, enabling compact heatsink design.
Q_g	70 nC (typ) - Reduces gate driver power demand and enables >500 kHz switching in isolated DC-DC stages.
E_AS	420 mJ - Sustains unclamped inductive switching events common in boost PFC and motor drive fault conditions.
C_oss(eff)	170 pF - Enables predictable zero-voltage switching (ZVS) timing in resonant half-bridge designs.
t_rr	200–300 ns - Limits reverse recovery overshoot and EMI generation during diode commutation.
R_θJC	0.75 °C/W - Supports ≥160 W power dissipation with standard TO-220 heatsinking (T_C ≤ 100°C).

Pinout & Package

IRFS31N20DTRL uses the industry-standard TO-220AB package with isolated tab (drain-connected), rated for 300°C soldering (10 s, 1.6 mm from case) and 10 lbf·in mounting torque.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Receives 10 V logic-level drive; threshold V_GS(th) = 3.0–5.5 V ensures reliable turn-on with standard PWM controllers.
2 - Drain	High-side power terminal	Internally connected to metal tab; requires electrical isolation when mounted to heatsink.
3 - Source	Power return & reference node	Serves as local ground for gate drive and current sensing; low-inductance layout essential for dV/dt immunity.
4 - Drain (Tab)	Thermal & power path	Provides primary heat transfer path; must be electrically isolated per JEDEC TO-220AB outline.

Key Features

Feature	Design Value
Low gate-to-drain charge (Q_gd)	33–49 nC - Minimizes Miller-induced shoot-through risk and improves controllability in high-dV/dt environments.
Fully characterized effective output capacitance (C_oss(eff))	170 pF - Enables precise dead-time calculation and ZVS optimization in resonant converters.
High avalanche energy rating	420 mJ single-pulse - Eliminates need for external clamping in 48 V telecom forward converters under overload.
Fast body diode with low Q_rr	1.7–2.6 µC - Reduces switching loss and voltage spikes during freewheeling in synchronous buck stages.
Linear derating factor	1.3 W/°C above 25°C - Allows predictable thermal margin extension up to T_J = 175°C.

Applications

Telecom 48 V Forward Converter

Industrial DC-DC Isolated PSU

Use Scenario: Primary-side switch in 48 V input, 12 V/30 A telecom forward converter operating at 250 kHz.

IC Role / Device Role / Timing Role: High-side main switch handling full load current with hard switching; synchronized to UC3845 controller.

Use Value: 0.082 Ω R_DS(on) limits conduction loss to <2.5 W, while 70 nC Q_g keeps gate drive loss <0.3 W at 250 kHz.

Use Scenario: Secondary-side synchronous rectifier in 48 V to 5 V/60 A isolated DC-DC module for PLC backplane power.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by transformer-coupled gate signal; body diode conducts during dead time.

Use Value: 1.3 V V_SD and 200 ns t_rr reduce rectifier loss by 35% vs. Schottky diode, improving efficiency from 92% to 94.2%.

Server VRM High-Frequency Buck

Motor Drive Half-Bridge Leg

Use Scenario: High-side switch in 12 V input, 1.2 V/120 A multiphase buck converter for CPU VRM.

IC Role / Device Role / Timing Role: Fast-switching power stage controlled by digital PWM IC; operates with 30 ns dead time.

Use Value: 124 A pulsed ID capability handles phase-current peaks; 0.75 °C/W R_θJC maintains T_J < 110°C under 100 A peak load.

Use Scenario: Low-side switch in 24 V H-bridge driving 150 W BLDC fan in HVAC control unit.

IC Role / Device Role / Timing Role: Ground-referenced switching element; body diode provides freewheeling path during PWM off-time.

Use Value: 420 mJ E_AS withstands inductive kickback from 200 µH motor winding without failure during emergency stop.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF20	R_DS(on) = 0.085 Ω, Q_g = 75 nC, E_AS = 380 mJ - slightly higher conduction loss and lower avalanche margin.	Lacks full characterization of C_oss(eff); less suitable for ZVS-critical resonant topologies.	Acceptable for cost-sensitive 200 V SMPS where avalanche stress is minimal and gate drive margin exists.
IXTH30N20P	R_DS(on) = 0.075 Ω, Q_g = 82 nC, E_AS = 480 mJ - lower on-resistance but higher gate charge increases driver complexity.	TO-247 package requires larger PCB footprint and different heatsink interface than TO-220AB.	Preferred for higher-efficiency 200 V systems needing <0.08 Ω R_DS(on), provided board space and thermal interface allow TO-247.

Compared with STP30NF20 and IXTH30N20P, IRFS31N20DTRL delivers optimal balance of low Q_g/R_DS(on) FoM, validated C_oss(eff), and TO-220AB compatibility - making it ideal for space-constrained, high-reliability telecom and industrial DC-DC designs.

Availability

IRFS31N20DTRL is available at Aetrix Electronics and suitable for telecom power supplies, industrial DC-DC converters, and motor drive inverters requiring stable component supply and long-term lifecycle support.

Supply support for IRFS31N20DTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power conversion in telecom, server, and industrial equipment.

FAQ

Is IRFS31N20DTRL suitable for 24 V automotive applications?

No - while rated for 200 V V_DS, IRFS31N20DTRL is not AEC-Q101 qualified and lacks automotive-grade screening, temperature cycling validation, or guaranteed operation down to –40°C with full parameter guarantees. Its –55°C to +175°C rating covers industrial, not automotive, ambient requirements.

Can IRFS31N20DTRL replace IRFB31N20D in existing designs?

Yes - both share identical electrical specifications, thermal performance, and TO-220AB mechanical outline. IRFS31N20DTRL is the surface-mount variant of the same die; differences are limited to leadform (straight leads vs. gull-wing), not functionality or ratings.

What is the maximum recommended gate resistor for 500 kHz switching?

A 5.6 Ω gate resistor is recommended for 500 kHz operation: it limits peak gate current to <1.8 A (with 10 V drive), suppresses ringing from L_g ≈ 15 nH, and achieves td(on)/td(off) ≈ 25/35 ns - balancing speed and EMI control per Fig. 10b waveforms.

Does the body diode support continuous reverse conduction?

No - the body diode is rated for pulsed source current (I_SM = 124 A) and continuous source current (I_S) only up to 31 A at T_C = 25°C. Continuous reverse conduction exceeds safe SOA limits; external Schottky or synchronous FETs are required for bidirectional current paths.

IRFS31N20DTRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 82mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2370 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS31N20DTRL FAQ

1.How can I place an order for IRFS31N20DTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS31N20DTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS31N20DTRL reliable?

The price and inventory of IRFS31N20DTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS31N20DTRL is usually 5 days.

3.What payment methods are accepted for IRFS31N20DTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS31N20DTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS31N20DTRL?

IRFS31N20DTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS31N20DTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS31N20DTRL?

For technical support, including IRFS31N20DTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS31N20DTRL requirements.

6.How does Aetrix verify that IRFS31N20DTRL is sourced from the original manufacturer or authorized distributors?

All IRFS31N20DTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS31N20DTRL meets industry standards.

7.What is the process for return or replacement of IRFS31N20DTRL?

All IRFS31N20DTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFS31N20DTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS31N20DTRL part is unused and in its original packaging.

Return procedure for IRFS31N20DTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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