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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS31N20DTRLP

Name: IRFS31N20DTRLP
Brand: Infineon Technologies
SKU: IRFS31N20DTRLP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS31N20DTRLP

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS31N20DTRLP.pdf

Description:: MOSFET N-CH 200V 31A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFS31N20DTRLP from Infineon Technologies is a 200 V, 31 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, optimized for high-frequency DC-DC converters including active-clamp forward topologies. It features 0.082 Ω R_DS(on) at V_GS = 10 V, low gate-to-drain charge (Q_gd = 33–65 nC), and fully characterized C_oss,eff = 170 pF for simplified snubberless design in telecom 48 V input systems.

For engineers reviewing the IRFS31N20DTRLP datasheet, IRFS31N20DTRLP pinout, IRFS31N20DTRLP application, or IRFS31N20DTRLP equivalent, key selection criteria include avalanche energy rating (E_AS = 420 mJ), diode reverse recovery performance (t_rr = 200–300 ns, Q_rr = 1.7–2.6 µC), and thermal resistance (R_θJC = 0.75 °C/W) for high-power density power supply designs.

Technical Context

This HEXFET device employs planar vertical DMOS architecture with optimized cell pitch and trench-assisted edge termination to achieve stable 200 V breakdown voltage (V_(BR)DSS) and low temperature coefficient (0.25 V/°C). Its gate threshold voltage (V_GS(th) = 3.0–5.5 V) ensures robust noise immunity in noisy industrial switching environments.

The MOSFET delivers high transconductance (g_fs = 17 S at V_DS = 50 V, I_D = 18 A) and fast switching dynamics (t_d(on) = 16 ns, t_f = 10 ns with R_G = 2.5 Ω), enabling operation above 500 kHz in resonant and phase-shifted full-bridge converters while maintaining low conduction and switching loss balance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands up to 200 V drain-source blocking voltage, suitable for 48 V telecom input with 4× safety margin.
R_DS(on) max	0.082 Ω @ V_GS = 10 V, I_D = 18 A - Enables <1.5 W conduction loss at 31 A continuous current in thermally managed layouts.
I_D @ T_C = 25°C	31 A - Supports high-current primary-side switching in compact 1–3 kW DC-DC modules without forced air cooling.
Q_gd	33–65 nC - Low Miller charge reduces gate drive power and improves immunity to dv/dt-induced turn-on in hard-switched topologies.
E_AS	420 mJ - Rated single-pulse avalanche energy allows reliable operation during transient overvoltage events in unclamped inductive loads.
t_rr	200–300 ns - Fast body diode recovery minimizes shoot-through risk and switching loss in synchronous rectification and bidirectional applications.
R_θJC	0.75 °C/W - Enables direct heatsink mounting for junction temperatures up to 175°C under 150 W dissipation in D2PAK footprint.

Pinout & Package

IRFS31N20DTRLP uses the surface-mount D2PAK (TO-263AB) package with exposed drain pad for enhanced thermal performance. The 4-pin configuration includes dual drain connections for current sharing and reduced source inductance.

Pin/Terminal	Circuit Role	Design Meaning
1 – Gate	Control terminal	High-impedance input requiring ≤10 V drive; low Q_g (70–107 nC) enables efficient driving with standard gate drivers.
2 – Drain	Power output node	Internally connected to metal tab; electrically tied to Pin 4 for parallel current paths and lower loop inductance.
3 – Source	Reference node / return path	Common source connection for gate drive reference; low-inductance layout critical for EMI control in >300 kHz operation.
4 – Drain	Power output node	Second drain terminal providing redundant current path and improved thermal spreading across PCB copper area.

Key Features

Feature	Design Value
Lead-free construction	RoHS-compliant plating and solderable terminations meeting JEDEC J-STD-020 reflow profile requirements.
Fully characterized C_oss,eff	170 pF (0–160 V sweep) - Enables accurate soft-switching timing prediction and zero-voltage switching (ZVS) design in LLC and phase-shifted converters.
Low gate-to-drain charge	Q_gd/Q_g ratio ~47% - Reduces Miller plateau duration and improves controllability during hard commutation transitions.
Enhanced avalanche ruggedness	Rated I_AR = 18 A, E_AR = 20 mJ - Supports repetitive unclamped inductive switching in flyback and forward converter reset phases.
Optimized body diode	V_SD = 1.3 V @ I_S = 18 A, t_rr = 200–300 ns - Enables use as freewheeling switch in synchronous buck or bidirectional DC-DC without external Schottky.

Applications

Telecom 48 V Input DC-DC Converters

Active Clamp Forward Converters

Use Scenario: Primary-side switch in isolated 48 V input, 12 V output telecom power supplies operating at 300–500 kHz.

IC Role / Device Role / Timing Role: High-side main switch handling full input current with precise dead-time control during ZVS transitions.

Use Value: Low R_DS(on) and Q_gd reduce total losses by ≥12% vs. legacy 200 V MOSFETs, enabling >95% efficiency at full load.

Use Scenario: Clamp switch in active-clamp forward topology recovering transformer reset energy and resetting core flux.

IC Role / Device Role / Timing Role: Synchronized clamp FET conducting during magnetizing current reversal with controlled dv/dt.

Use Value: Fully characterized C_oss,eff and low Q_gd enable predictable clamp timing and eliminate need for external snubbers.

Industrial Motor Drive Inverters

Server VRM High-Density POL Modules

Use Scenario: Half-bridge leg in 200–400 V industrial servo drives requiring robust short-circuit withstand capability.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting regeneration current during braking.

Use Value: 420 mJ E_AS rating and 18 A I_AR support safe shutdown during motor stall faults without external protection.

Use Scenario: High-side switch in multiphase buck converters delivering 50–100 A to server CPUs/GPUs at <1 V output.

IC Role / Device Role / Timing Role: Fast-switching primary FET operating at 1–2 MHz with minimal gate drive loss.

Use Value: 10 ns fall time and 16 ns turn-on delay enable tight duty-cycle control and sub-100 ns dead-time optimization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB31N20DPbF	TO-220AB through-hole package; identical electrical specs but higher R_θJA (62 °C/W vs. 40 °C/W for D2PAK).	Preferred for prototyping or low-volume manual assembly where heatsink mounting is simpler than SMT thermal pads.	Select when board-level thermal management favors mechanical screw-down heatsinks over soldered copper planes.
IRFSL31N20DPbF	TO-262 (I²PAK) package; same die but different leadframe geometry yields R_θJC = 0.85 °C/W and slightly higher C_iss.	Better suited for hybrid assemblies combining SMT and through-hole components on same board.	Choose when existing layout uses TO-262 footprints and requires minimal redesign while retaining 200 V/31 A capability.

Compared with IRFB31N20DPbF and IRFSL31N20DPbF, IRFS31N20DTRLP offers superior thermal performance (R_θJC = 0.75 °C/W) and lower parasitic inductance due to its D2PAK dual-drain structure-critical for minimizing voltage overshoot in >300 kHz hard-switched converters.

Availability

IRFS31N20DTRLP is available at Aetrix Electronics and suitable for telecom power supplies, industrial motor drives, and server VRMs requiring stable component supply, long-lifecycle availability, and RoHS-compliant lead-free manufacturing.

Supply support for IRFS31N20DTRLP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power conversion in telecom infrastructure, industrial automation, and computing power delivery systems.

FAQ

What is the maximum recommended gate drive voltage for IRFS31N20DTRLP?

The absolute maximum gate-to-source voltage is ±30 V, but the device is characterized and optimized for 10 V drive. Operating above 12 V provides diminishing R_DS(on) improvement while increasing gate oxide stress and Q_g demand. For reliability and drive simplicity, 10–12 V is the recommended range per Infineon AN-1001.

Does IRFS31N20DTRLP support paralleling for higher current capacity?

Yes-its positive temperature coefficient of R_DS(on) (0.25 V/°C) ensures inherent current sharing when multiple devices are paralleled. Thermal coupling via shared heatsink and matched gate drive impedance (≤2.5 Ω per gate) are required to maintain balanced conduction across units in multi-phase or high-current designs.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

The integrated body diode has V_SD = 1.3 V at 18 A and t_rr = 200–300 ns-higher forward drop than 0.5 V Schottkys but significantly faster recovery than standard PN diodes. It is suitable for low-duty-cycle freewheeling or clamp functions but not optimal as main synchronous rectifier in high-efficiency <1 V output stages where Schottky or GaN alternatives offer lower loss.

Is IRFS31N20DTRLP suitable for use in automotive applications?

No-it is not AEC-Q101 qualified and lacks automotive-grade screening, extended temperature validation beyond −55°C to +175°C, or PPAP documentation. While its junction temperature rating meets under-hood extremes, Infineon recommends dedicated automotive-grade variants (e.g., IPBxxN20N series) for functional safety-critical vehicle systems.

IRFS31N20DTRLP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 82mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 107 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2370 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS31N20DTRLP FAQ

1.How can I place an order for IRFS31N20DTRLP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS31N20DTRLP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS31N20DTRLP reliable?

The price and inventory of IRFS31N20DTRLP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS31N20DTRLP is usually 5 days.

3.What payment methods are accepted for IRFS31N20DTRLP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS31N20DTRLP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS31N20DTRLP?

IRFS31N20DTRLP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS31N20DTRLP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS31N20DTRLP?

For technical support, including IRFS31N20DTRLP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS31N20DTRLP requirements.

6.How does Aetrix verify that IRFS31N20DTRLP is sourced from the original manufacturer or authorized distributors?

All IRFS31N20DTRLP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS31N20DTRLP meets industry standards.

7.What is the process for return or replacement of IRFS31N20DTRLP?

All IRFS31N20DTRLP units undergo pre-shipment inspection (PSI). If there is an issue with IRFS31N20DTRLP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS31N20DTRLP part is unused and in its original packaging.

Return procedure for IRFS31N20DTRLP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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