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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS31N20DTRR

Name: IRFS31N20DTRR
Brand: Infineon Technologies
SKU: IRFS31N20DTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS31N20DTRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS31N20DTRR.pdf

Description:: MOSFET N-CH 200V 31A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFS31N20DTRR from Infineon Technologies is a 200 V, 31 A (T_C = 25°C), 0.082 Ω R_DS(on) N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-frequency DC-DC converters and telecom 48 V input forward converters with low gate-to-drain charge (Q_gd = 33–49 nC) and fully characterized C_oss,eff = 170 pF.

For engineers reviewing the IRFS31N20DTRR datasheet, IRFS31N20DTRR pinout, IRFS31N20DTRR application, or IRFS31N20DTRR equivalent, key selection criteria include avalanche energy rating (E_AS = 420 mJ), diode reverse recovery performance (t_rr = 200–300 ns, Q_rr = 1.7–2.6 µC), thermal resistance (R_θJC = 0.75 °C/W), and SOA-limited switching capability at 100 V/18 A.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with integrated body diode, supporting unclamped inductive switching up to I_AR = 18 A and E_AS = 420 mJ. Its dynamic parameters-including Q_g = 70–110 nC, Q_gs = 18–27 nC, and t_r/t_f = 38/10 ns-are specified at V_DD = 100 V, I_D = 18 A, R_G = 2.5 Ω, enabling precise loss modeling in hard-switched SMPS topologies.

The device features temperature-stable V_(BR)DSS with 0.25 V/°C coefficient and R_DS(on) normalized to 2.5× at T_J = 175°C. C_iss/C_oss/C_rss are fully characterized from V_DS = 1.0 V to 160 V, including effective output capacitance (C_oss,eff = 170 pF) for resonant design validation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Maximum blocking voltage before avalanche onset; supports 48 V telecom input with ≥4× safety margin in forward converters.
R_DS(on) max	0.082 Ω @ V_GS = 10 V, I_D = 18 A - Conduction loss of 27 W at 18 A, requiring heatsinking per R_θJC = 0.75 °C/W.
Q_gd	33–49 nC - Miller charge directly impacts turn-off delay and dv/dt immunity; enables stable operation at >200 kHz switching.
E_AS	420 mJ - Single-pulse avalanche energy rating allows robustness against inductive turn-off transients without external snubbers.
t_rr	200–300 ns - Body diode recovery time limits minimum dead-time in synchronous rectification; paired with Q_rr = 1.7–2.6 µC.
R_θJC	0.75 °C/W - Junction-to-case thermal resistance defines heatsink interface requirement; enables 200 W dissipation at ΔT = 150°C.
I_D @ T_C = 100°C	21 A - Derated continuous current at elevated case temperature; critical for enclosed power supply thermal design.

Pinout & Package

IRFS31N20DTRR uses the industry-standard TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, and 1.1 N·m screw torque rating. The package provides low-inductance source connection and direct heatsink interface via the drain tab.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	High-impedance MOS gate requiring <5 V threshold (V_GS(th) = 3.0–5.5 V); driven by 10 V logic for full enhancement.
2 - Drain	High-side power terminal	Internally connected to metal tab; electrically isolated from mounting surface but thermally coupled for heatsinking.
3 - Source	Power return/reference node	Low-inductance Kelvin source path; serves as gate drive reference and current-sense point in high-side configurations.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	33–49 nC / 70–110 nC = ~45 % - Reduces Miller-induced shoot-through risk and improves gate drive efficiency in half-bridge layouts.
Fully characterized C_oss,eff	170 pF over 0–160 V - Enables accurate soft-switching timing prediction and ZVS boundary calculation in LLC resonant converters.
Specified avalanche capability	E_AS = 420 mJ, I_AR = 18 A - Eliminates need for external clamping in flyback or active clamp forward designs under fault conditions.
Body diode t_rr & Q_rr	t_rr = 200–300 ns, Q_rr = 1.7–2.6 µC - Supports synchronous rectification with predictable reverse recovery loss and minimal voltage overshoot.

Applications

Telecom 48 V Forward Converter

Industrial DC-DC Brick

Use Scenario: Primary-side switch in isolated 48 V input, 12 V/30 A output forward converter operating at 250 kHz.

IC Role / Device Role / Timing Role: High-side main switch handling 18 A peak current with 100 V V_DS stress during reset.

Use Value: Low Q_gd minimizes turn-off losses; R_DS(on) = 0.082 Ω limits conduction loss to ≤27 W at full load.

Use Scenario: Secondary-side synchronous rectifier in 28 V input, 5 V/60 A industrial DC-DC module.

IC Role / Device Role / Timing Role: Low-side freewheeling switch leveraging fast body diode recovery (t_rr = 200–300 ns).

Use Value: Q_rr = 1.7–2.6 µC reduces reverse recovery loss; TO-220AB tab enables direct heatsink mounting for 60 A RMS current.

Server VRM High-Side Switch

UPS Inverter Stage

Use Scenario: High-side switch in multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 300 A.

IC Role / Device Role / Timing Role: Fast-switching power stage with tight gate charge control (Q_g = 70–110 nC) for <50 ns dead-time compliance.

Use Value: C_iss = 2370 pF and C_rss = 78 pF enable predictable drive strength requirements and minimize EMI from dv/dt coupling.

Use Scenario: Half-bridge leg switch in 120 V DC bus UPS inverter delivering 230 V AC output.

IC Role / Device Role / Timing Role: Hard-switched inverter switch subjected to repetitive unclamped inductive energy during commutation.

Use Value: E_AS = 420 mJ and R_DS(on) stability over temperature ensure reliability across 0–55°C ambient without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF20	R_DS(on) = 0.085 Ω, Q_g = 65 nC, E_AS = 320 mJ, TO-220 package	Lower avalanche energy and slightly higher on-resistance reduce margin in high-stress telecom forward converters.	Select when cost sensitivity outweighs 25% E_AS margin and thermal budget allows +0.003 Ω conduction loss.
IXTP30N20P	R_DS(on) = 0.075 Ω, Q_g = 78 nC, E_AS = 380 mJ, TO-220 package	Lower R_DS(on) improves conduction loss but higher Q_g increases switching loss above 300 kHz.	Prefer for lower-current, high-efficiency 100–200 kHz designs where thermal headroom exists for gate drive power increase.

Compared with STP30NF20 and IXTP30N20P, IRFS31N20DTRR delivers optimal balance of avalanche ruggedness (420 mJ), moderate Q_g (70–110 nC), and proven C_oss,eff characterization-making it preferred for telecom and industrial SMPS where reliability under transient stress is non-negotiable.

Availability

IRFS31N20DTRR is available at Aetrix Electronics and suitable for telecom 48 V forward converters, industrial DC-DC bricks, server VRM high-side switches, and UPS inverter stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFS31N20DTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon MOSFET and IGBT technologies since 1999.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency switched-mode power supplies in telecom infrastructure, industrial automation, and uninterruptible power systems.

FAQ

Is IRFS31N20DTRR suitable for synchronous rectification?

Yes. Its body diode exhibits t_rr = 200–300 ns and Q_rr = 1.7–2.6 µC at I_F = 18 A and di/dt = 100 A/µs, enabling reliable synchronous rectification in forward and LLC converters. The low R_DS(on) further reduces conduction loss versus Schottky alternatives at >12 V output.

What is the maximum recommended gate drive voltage?

The absolute maximum V_GS is ±30 V, but the device achieves full enhancement at V_GS = 10 V (R_DS(on) spec point). Driving above 15 V yields diminishing R_DS(on) improvement while increasing gate oxide stress; 10–12 V is optimal for reliability and loss trade-off.

Does IRFS31N20DTRR have avalanche-rated capability?

Yes. It is fully rated for unclamped inductive switching with single-pulse avalanche energy E_AS = 420 mJ and repetitive avalanche energy E_AR = 20 mJ. These values are measured per JEDEC JESD24-11 and validated across temperature, making it suitable for flyback and active-clamp topologies without external protection.

How does the TO-220AB package affect thermal performance?

The TO-220AB package features an isolated drain tab that enables direct mechanical attachment to a heatsink while maintaining electrical isolation. With R_θJC = 0.75 °C/W and R_θCS = 0.50 °C/W (greased), it achieves ~1.25 °C/W junction-to-sink thermal resistance-critical for sustaining 200 W dissipation in compact power modules.

IRFS31N20DTRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 82mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2370 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS31N20DTRR FAQ

1.How can I place an order for IRFS31N20DTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS31N20DTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS31N20DTRR reliable?

The price and inventory of IRFS31N20DTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS31N20DTRR is usually 5 days.

3.What payment methods are accepted for IRFS31N20DTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS31N20DTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS31N20DTRR?

IRFS31N20DTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS31N20DTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS31N20DTRR?

For technical support, including IRFS31N20DTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS31N20DTRR requirements.

6.How does Aetrix verify that IRFS31N20DTRR is sourced from the original manufacturer or authorized distributors?

All IRFS31N20DTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS31N20DTRR meets industry standards.

7.What is the process for return or replacement of IRFS31N20DTRR?

All IRFS31N20DTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFS31N20DTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS31N20DTRR part is unused and in its original packaging.

Return procedure for IRFS31N20DTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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