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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS31N20DTRRP

Name: IRFS31N20DTRRP
Brand: Infineon Technologies
SKU: IRFS31N20DTRRP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS31N20DTRRP

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS31N20DTRRP.pdf

Description:: MOSFET N-CH 200V 31A D2PAK

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Product details

Overview

IRFS31N20DTRRP from Infineon Technologies is a 200V, 31A N-channel enhancement-mode HEXFET Power MOSFET in D²Pak (TO-263) package, optimized for high-frequency DC-DC converters including active-clamp forward topologies. It features 0.082Ω R_DS(on) at V_GS = 10V, fully characterized C_oss (170 pF effective), and 420 mJ single-pulse avalanche energy - enabling robust operation in telecom 48V input power stages.

For engineers reviewing the IRFS31N20DTRRP datasheet, IRFS31N20DTRRP pinout, IRFS31N20DTRRP application, or IRFS31N20DTRRP equivalent, key selection criteria include gate charge (70–107 nC), diode reverse recovery (Q_rr = 1.7–2.6 µC), thermal resistance (R_θJC = 0.75°C/W), and lead-free compliance per JEDEC TO-263 outline.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with low gate-to-drain charge (Q_gd = 33–65 nC) to minimize switching loss in hard-switched and resonant converters. Its fully characterized C_oss vs. V_DS curve and effective C_oss (170 pF) simplify snubberless design in active-clamp forward and LLC topologies.

The device integrates a fast body diode with t_rr = 200–300 ns and V_SD = 1.3 V at 18A, supporting synchronous rectification and bidirectional current handling in phase-shifted full-bridge designs. Avalanche-rated (I_AR = 18 A, E_AS = 420 mJ), it sustains unclamped inductive switching stress without external protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - supports 48V input DC-DC with ≥4× voltage margin against transients
R_DS(on) max	0.082 Ω @ V_GS = 10V, I_D = 18A - enables <1.5W conduction loss at 31A continuous
I_D @ T_C = 25°C	31 A - rated for high-current primary-side switching in 300–500W telecom supplies
Q_g typ/max	70/107 nC - determines gate driver strength requirement for <50 ns turn-on in 500 kHz+ operation
C_oss,eff	170 pF - defines hard-switching energy loss (E = ½·C·V²) and ZVS transition capability
E_AS	420 mJ - allows reliable operation under unclamped inductive switching up to 18A peak
R_θJC	0.75 °C/W - enables 125°C junction rise with only 94W power dissipation at case

Pinout & Package

IRFS31N20DTRRP uses the surface-mount D²Pak (TO-263) package with exposed drain pad for thermal and electrical performance. The 3-pin configuration (Gate, Drain, Source) places Drain on both pins 2 and 4 for low-inductance high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
1 (GATE)	Control electrode	Accepts 10V logic-level drive; threshold 3.0–5.5V ensures compatibility with standard PWM controllers
2 (DRAIN)	High-side power terminal	Connected to primary winding or bus rail; electrically tied to pin 4 for parallel current paths
3 (SOURCE)	Reference node / return path	Serves as local ground reference for gate drive and current sensing; ties to PCB ground plane
4 (DRAIN)	Secondary high-side terminal	Redundant drain connection reduces package inductance and improves current sharing in high-di/dt switching

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	33–65 nC / 70–107 nC - suppresses Miller-induced shoot-through in half-bridge configurations
Fully characterized C_oss	170 pF effective @ 0–160V - enables accurate soft-switching timing and loss modeling per AN-1001
Avalanche-rated	420 mJ single-pulse, 20 mJ repetitive - eliminates need for external clamping in flyback/forward reset circuits
Lead-free & RoHS-compliant	Meets JEDEC J-STD-020 reflow profile - supports automated SMT assembly without Pb contamination risk
Enhanced diode recovery	Q_rr = 1.7–2.6 µC, t_rr = 200–300 ns - minimizes switching loss and EMI in synchronous rectifier applications

Applications

Telecom 48V DC-DC Converters

Active-Clamp Forward Converters

Use Scenario: Primary-side switch in isolated 48V input, 12V/30A output telecom power supply operating at 300–500 kHz.

IC Role / Device Role / Timing Role: High-side switching element controlling energy transfer via transformer primary; operates in hard-switched mode with zero-voltage switching assist.

Use Value: 0.082Ω R_DS(on) and 170 pF C_oss,eff reduce total switching + conduction loss to <3.2W at full load, improving efficiency to >94%.

Use Scenario: Clamp switch in active-clamp forward converter for server PSU, resetting transformer flux while recycling energy.

IC Role / Device Role / Timing Role: Synchronized auxiliary switch turning on during main switch dead-time to clamp and recover leakage energy.

Use Value: 420 mJ avalanche rating and low Q_gd ensure reliable clamp action without snubber losses or voltage overshoot beyond 200V.

Industrial Motor Drive Inverters

UPS DC-Link Switching Stages

Use Scenario: Half-bridge leg in 3-phase inverter driving 1–3 kW PMSM motors in HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switching device conducting continuous 21A at 100°C case temperature; commutates motor phase current with body diode freewheeling.

Use Value: 1.3 V V_SD and 200 ns t_rr limit freewheeling loss and dv/dt-induced gate ringing during regeneration.

Use Scenario: Bidirectional DC-link switch in online UPS systems managing battery charge/discharge and grid synchronization.

IC Role / Device Role / Timing Role: Unidirectional power flow controller in buck-boost stage; handles 31A continuous and 124A pulsed current during surge events.

Use Value: R_θJC = 0.75°C/W and 200W PD rating allow stable operation at 75°C ambient without forced air, reducing system cooling cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB31N20DPbF	TO-220AB through-hole package; identical R_DS(on), Q_g, and V_DSS; R_θJC = 0.75°C/W same	Requires wave soldering or manual mounting; less suitable for high-density SMT layouts	Select when board space permits larger footprint and thermal interface uses mechanical screw-down heatsink
IRFSL31N20DPbF	TO-262 (I²PAK) package; same die, slightly higher R_θJA (40 vs. 62°C/W); identical SOA and avalanche rating	Offers mid-density SMT alternative with easier hand-soldering than D²Pak but lower thermal performance than TO-220	Select for prototyping or medium-volume production where D²Pak reflow yield is challenging

Compared with IRFB31N20DPbF and IRFSL31N20DPbF, IRFS31N20DTRRP delivers superior thermal performance in compact SMT form factor, enabling higher power density in telecom and industrial DC-DC modules without sacrificing ruggedness or switching efficiency.

Availability

IRFS31N20DTRRP is available at Aetrix Electronics and suitable for telecom 48V DC-DC converters, active-clamp forward power supplies, and industrial motor drive inverters requiring stable component supply and long-term lifecycle support.

Supply support for IRFS31N20DTRRP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered for high-efficiency, high-reliability switching in telecom, server, and industrial power conversion - emphasizing low gate charge, rugged avalanche behavior, and thermally optimized packages.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFS31N20DTRRP supports 21 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating from 31 A at 25°C reflects thermal limits of the D²Pak package and ensures safe operation within its SOA boundary at elevated temperatures.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No - the device has a gate threshold voltage range of 3.0–5.5 V and is designed for positive-only gate drive. A V_GS ≤ –10 V is not required; however, applying –5 V during off-state improves noise immunity in high-dv/dt environments, and gate-to-source leakage remains ≤100 nA at –30 V per datasheet.

Can IRFS31N20DTRRP replace IRFB31N20DPbF in an existing TO-220 layout?

No - IRFS31N20DTRRP uses D²Pak (TO-263) with gull-wing leads and thermal pad, while IRFB31N20DPbF uses TO-220AB with through-hole leads. Footprint, soldering process, and thermal interface differ fundamentally; direct replacement requires PCB redesign and requalification of thermal performance and mechanical mounting.

Is the body diode suitable for synchronous rectification in a 500 kHz LLC resonant converter?

Yes - with t_rr = 200–300 ns and Q_rr = 1.7–2.6 µC, the intrinsic diode supports synchronous rectification up to ~600 kHz when paired with proper gate timing control. However, dedicated SR controllers are recommended to avoid cross-conduction, as V_SD = 1.3 V introduces ~2.3 W conduction loss at 18 A.

IRFS31N20DTRRP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 82mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 107 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2370 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS31N20DTRRP FAQ

1.How can I place an order for IRFS31N20DTRRP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS31N20DTRRP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS31N20DTRRP reliable?

The price and inventory of IRFS31N20DTRRP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS31N20DTRRP is usually 5 days.

3.What payment methods are accepted for IRFS31N20DTRRP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS31N20DTRRP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS31N20DTRRP?

IRFS31N20DTRRP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS31N20DTRRP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS31N20DTRRP?

For technical support, including IRFS31N20DTRRP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS31N20DTRRP requirements.

6.How does Aetrix verify that IRFS31N20DTRRP is sourced from the original manufacturer or authorized distributors?

All IRFS31N20DTRRP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS31N20DTRRP meets industry standards.

7.What is the process for return or replacement of IRFS31N20DTRRP?

All IRFS31N20DTRRP units undergo pre-shipment inspection (PSI). If there is an issue with IRFS31N20DTRRP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS31N20DTRRP part is unused and in its original packaging.

Return procedure for IRFS31N20DTRRP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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