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Infineon Technologies IRFS3206PBF
- Part No.:
- IRFS3206PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFS3206PBF.pdf
- Description:
- MOSFET N-CH 60V 120A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,101
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Product details
Overview
IRFS3206PBF from Infineon Technologies (formerly International Rectifier) is a 60V, 2.4 mΩ typ. N-channel D2PAK-7L HEXFET® Power MOSFET optimized for high-current synchronous rectification in hard-switched SMPS and UPS systems. It delivers 120A package-limited continuous drain current at TC = 25°C, features 120 nC total gate charge, and supports 33 ns typical reverse recovery time in its integrated body diode.
For engineers reviewing the IRFS3206PBF datasheet, IRFS3206PBF pinout, IRFS3206PBF application, or IRFS3206PBF equivalent, this device is selected for high-frequency power conversion where low RDS(on), robust avalanche capability (170 mJ single-pulse), and fast diode recovery are critical to efficiency and reliability in 48–60V bus architectures.
Technical Context
This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted source metallization to achieve ultra-low on-resistance while maintaining high dV/dt immunity (≥50 V/ns) and enhanced body diode ruggedness. Its SOA is fully characterized up to 100 μs pulses at 175°C junction temperature.
The device integrates a low-Qrr (41–62 nC), low-VSD (≤1.3 V) intrinsic body diode with controlled reverse recovery waveform-enabling reliable operation in synchronous buck, LLC resonant, and bidirectional DC/DC topologies without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage compatible with 48V nominal input systems with 20% transient margin. |
| RDS(on) typ. | 2.4 mΩ - Enables ≤1.2 W conduction loss at 75 A, reducing heatsink requirements in high-current rails. |
| ID (Package) | 120 A @ TC = 25°C - Determined by leadframe thermal and bond-wire current limits, not silicon capacity. |
| Qg | 120 nC - Gate drive energy requirement dictates minimum driver peak current (≥2.4 A for 50 ns rise time). |
| trr | 33 ns - Fast body diode recovery minimizes shoot-through risk and switching losses in synchronous rectifiers. |
| EAS | 170 mJ - Single-pulse avalanche rating allows unclamped inductive switching survival in UPS and motor drive fault conditions. |
| RθJC | 0.50 °C/W - Junction-to-case thermal resistance enables direct mounting to heatsinks with <1.1 N·m torque (6-32 screw). |
Pinout & Package
D2PAK-7L (TO-263-7L) surface-mount package with exposed drain pad for thermal and electrical performance; 7-terminal configuration includes 3-source pins, 1-gate, and 3-drain connections (2 outer + 1 center tab).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (S1) | Source | Primary low-side return path; paralleled with S2/S3 to reduce source inductance in high-dI/dt switching. |
| Pin 2 (G) | Gate | Control terminal requiring 10 V for full enhancement; threshold voltage range 2.0–4.0 V ensures noise immunity. |
| Pin 3 (S2) | Source | Secondary source connection; used with S1/S3 to distribute high-frequency return current across PCB copper. |
| Pin 4 (D1) | Drain | High-current output node tied to internal die drain metallization; electrically and thermally connected to exposed pad. |
| Pin 5 (S3) | Source | Third source terminal enabling Kelvin-sensing configurations or multi-layer PCB routing optimization. |
| Pin 6 (D2) | Drain | Secondary drain connection enhancing current sharing and reducing package parasitic inductance. |
| Pin 7 (D3) | Drain | Center-tab drain terminal providing lowest-inductance path to heatsink and minimizing VDS ringing during turn-off. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced body diode dV/dt and dI/dt capability | Rated for 360 A/μs di/dt and ≥50 V/ns dv/dt - prevents spurious turn-on during fast commutation in bridge legs. |
| Fully characterized avalanche SOA | 170 mJ single-pulse EAS validated at TJ = 175°C - eliminates need for external snubbers in UPS hold-up circuits. |
| Lead-free, RoHS-compliant, halogen-free | Meets IPC-J-STD-020D reflow profile (peak 260°C) and IEC 61249-2-21 material restrictions for industrial compliance. |
| Low Coss eff. (TR) | 1230 pF - effective output capacitance optimized for ZVS transition timing in resonant converters operating >300 kHz. |
| Improved gate ruggedness | ±20 V gate rating with 100 nA reverse leakage - withstands gate drive transients in high-noise motor control environments. |
Applications
| High-Efficiency Synchronous Rectification | Uninterruptible Power Supply (UPS) |
|---|---|
|
Use Scenario: Secondary-side switching in 48V-output telecom rectifiers and server VRMs operating at 300–500 kHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve full-load efficiency by ≥1.5%. Use Value: 2.4 mΩ RDS(on) and 33 ns trr minimize both static and dynamic losses, enabling >95% efficiency at 100 A output. |
Use Scenario: Inverter stage and battery-charging H-bridge in line-interactive and double-conversion UPS systems (1–10 kVA). IC Role / Device Role / Timing Role: High-current half-bridge switch handling bidirectional 48–60V DC bus with fast body diode recovery during transfer switching. Use Value: 120 A package rating and 170 mJ EAS ensure fault ride-through during grid dropouts and short-circuit events without desaturation. |
| Hard-Switched DC/DC Converters | High-Frequency SMPS |
|
Use Scenario: Primary-side switch in isolated forward or active-clamp forward converters for industrial PLC power supplies. IC Role / Device Role / Timing Role: Main power switch subjected to repetitive 60V clamped inductive spikes and 100+ kHz switching. Use Value: Fully characterized avalanche SOA and 0.50 °C/W RθJC allow sustained operation under hard-switching stress without derating. |
Use Scenario: Output rectification in compact 60W–300W AC/DC adapters using quasi-resonant flyback or LLC topology. IC Role / Device Role / Timing Role: Synchronous rectifier operating with gate drive synchronized to transformer secondary voltage zero-crossings. Use Value: Low Qg/Qgd ratio (120 nC / 35 nC) enables precise timing control and reduces gate drive power consumption by >40% vs. legacy MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current 60V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFB3206PBF | TO-220AB package; higher RθJA (62 °C/W); same RDS(on) and Qg; no D2PAK-7L pinout. | Limited to lower-power, through-hole designs with forced-air cooling; unsuitable for high-density SMT layouts. | Select when board space permits through-hole mounting and thermal interface uses clip-on heatsinks. |
| STL220N6F7 | 60V, 1.8 mΩ typ., 220A; trench-gate Si; 105 nC Qg; different pinout and footprint; non-drop-in replacement. | Better conduction loss but higher gate charge sensitivity; requires redesigned gate driver layout and layout validation. | Choose only if system-level efficiency gain justifies full PCB redesign and qualification cycle. |
Compared with IRFB3206PBF, IRFS3206PBF offers superior thermal performance via D2PAK-7L's lower RθJC and distributed source/drain terminals, while STL220N6F7 trades higher cost and layout effort for marginal RDS(on) improvement-making IRFS3206PBF the optimal balance of manufacturability, ruggedness, and thermal scalability.
Availability
IRFS3206PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply inverters, and hard-switched DC/DC converters requiring stable component supply across extended production lifecycles.
Supply support for IRFS3206PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-current, high-frequency power conversion in enterprise power supplies, renewable energy inverters, and industrial motor drives.
FAQ
What is the maximum continuous drain current for IRFS3206PBF at 100°C case temperature?
The maximum continuous drain current at TC = 100°C is 150 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value reflects thermal derating based on junction-to-case thermal resistance and maximum allowable junction temperature of 175°C, not package or bond-wire limits.
Does IRFS3206PBF support gate drive voltages below 10 V?
Yes-its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, enabling partial enhancement at 5 V. However, full RDS(on) specification (2.4 mΩ typ.) is guaranteed only at VGS = 10 V; operation at 5 V yields ~3× higher on-resistance and increased conduction loss.
Can IRFS3206PBF be used in parallel configurations?
Yes-the D2PAK-7L package's three-source terminals and matched RDS(on) tolerance (±20%) support current sharing in parallel operation. Designers must ensure symmetrical PCB layout, matched gate drive impedance, and thermal coupling to avoid imbalance; derating by 15% per device is recommended.
Is the body diode suitable for reverse recovery in high-dI/dt applications?
Yes-the body diode is characterized for dI/dt up to 360 A/μs and reverse recovery charge (Qrr) of 41–62 nC at 125°C. Its fast trr (33 ns typ.) and low IRRM (≤2.1 A) make it suitable for synchronous rectification without external diode supplementation in most 48V bus applications.
IRFS3206PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 170 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6540 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRFS3206PBF FAQ
1.How can I place an order for IRFS3206PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFS3206PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFS3206PBF reliable?
The price and inventory of IRFS3206PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS3206PBF is usually 5 days.
3.What payment methods are accepted for IRFS3206PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS3206PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFS3206PBF?
IRFS3206PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFS3206PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFS3206PBF?
For technical support, including IRFS3206PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS3206PBF requirements.
6.How does Aetrix verify that IRFS3206PBF is sourced from the original manufacturer or authorized distributors?
All IRFS3206PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS3206PBF meets industry standards.
7.What is the process for return or replacement of IRFS3206PBF?
All IRFS3206PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS3206PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFS3206PBF part is unused and in its original packaging.
Return procedure for IRFS3206PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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