Infineon Technologies IRFS3207ZPBF

Overview

IRFS3207ZPBF from Infineon Technologies (formerly International Rectifier) is a 75V, 120A (package-limited), 3.3mΩ typ. N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 (ISOTOP) package, optimized for high-efficiency synchronous rectification and hard-switched SMPS topologies. It features enhanced body diode dV/dt and dI/dt capability, fully characterized avalanche SOA, and RoHS-compliant lead-free construction.

For engineers reviewing the IRFS3207ZPBF datasheet, IRFS3207ZPBF pinout, IRFS3207ZPBF application, or IRFS3207ZPBF equivalent, key selection criteria include its 4.1mΩ max. R_DS(on), 120A continuous drain rating at T_C = 25°C, 170A silicon-limited current, 120nC typical gate charge, and robust 300mJ single-pulse avalanche energy - critical for UPS, telecom PSUs, and high-frequency DC-DC converters.

Technical Context

This MOSFET employs planar stripe cell technology with optimized gate oxide and trench-assisted body diode design to achieve low conduction loss while sustaining high dv/dt (2.0 V/ns) and di/dt (1730 A/µs) during reverse recovery. Its gate threshold voltage (2.0–4.0V) and 0.80Ω internal gate resistance support direct logic-level drive and reduce switching oscillation risk.

The device's dynamic parameters - including 6920pF input capacitance, 770pF energy-related C_oss, and 36–54ns trr across temperature - are fully characterized for accurate loss modeling in synchronous buck and LLC resonant converters operating up to 1MHz. Avalanche ruggedness is validated per unclamped inductive test (UIS) with I_AS = 102A and E_AS = 300mJ.

Key Specifications

Pinout & Package

IRFS3207ZPBF uses the TO-262 (ISOTOP) package: a through-hole variant of TO-220 with isolated mounting tab, rated for high-power dissipation and compatible with standard heatsink clamping hardware (6-32/M3 screw, 10 lb·in torque). The package provides low-inductance source connection and thermally efficient junction-to-case path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 75V power MOSFET applications.

Compared with STL220N7F7 and IXFH32N75X3, IRFS3207ZPBF delivers optimal balance of ultra-low R_DS(on), moderate gate charge, and proven avalanche robustness in TO-262 - making it uniquely suited for cost-sensitive, high-reliability 100–120A synchronous rectifier applications where thermal management and surge immunity are critical.

Availability

IRFS3207ZPBF is available at Aetrix Electronics and suitable for high-efficiency SMPS, uninterruptible power supply (UPS), hard-switched DC-DC converters, and industrial motor drive stages requiring stable component supply and long-term lifecycle support.

Supply support for IRFS3207ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices and system-level reliability engineering.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line - engineered specifically for high-current, high-ruggedness power conversion in telecom, server, and industrial UPS applications where avalanche endurance and thermal stability are non-negotiable.

FAQ

What is the maximum continuous drain current for IRFS3207ZPBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 170A (silicon-limited), but the package-limited rating drops to 120A at T_C = 25°C and derates linearly to approximately 70A at T_C = 100°C based on the 0.50°C/W R_θJC and 175°C T_J(max). This reflects bond-wire current limits, not die capability.

Does IRFS3207ZPBF support logic-level gate drive?

Yes - its gate threshold voltage range is 2.0–4.0V, and it achieves full enhancement (R_DS(on) ≤ 4.1mΩ) with V_GS = 10V. While it can be driven directly from 5V logic, optimal performance (lowest R_DS(on) and fastest switching) requires ≥10V gate drive; 3.3V logic alone is insufficient for full conduction.

How does the body diode performance compare to discrete Schottky rectifiers in synchronous rectification?

The body diode exhibits 36–54ns reverse recovery time and 50–75nC Q_rr, significantly faster than standard FRD diodes but slower than SiC Schottky. However, its integrated nature eliminates packaging inductance and enables precise timing alignment with gate drive - yielding lower total system loss than discrete solutions in well-designed synchronous buck stages below 500kHz.

Is IRFS3207ZPBF suitable for paralleling multiple devices in high-current inverters?

Yes - its positive R_DS(on) temperature coefficient (0.091V/°C V_(BR)DSS TC) ensures inherent current sharing stability. Successful paralleling requires matched gate drive layout, symmetrical PCB copper pours, and individual gate resistors (≥5Ω) to damp oscillation; thermal coupling via shared heatsink further improves balance.