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Infineon Technologies IRFS3207ZTRRPBF
- Part No.:
- IRFS3207ZTRRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFS3207ZTRRPBF.pdf
- Description:
- MOSFET N-CH 75V 120A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,582
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Product details
Overview
IRFS3207ZTRRPBF from Infineon Technologies (formerly International Rectifier) is a 75V, 120A (package-limited), 3.3mΩ typ. N-channel D2Pak power MOSFET optimized for high-frequency hard-switched SMPS and synchronous rectification. It features enhanced body diode dV/dt and dI/dt capability, fully characterized avalanche SOA, and RoHS-compliant lead-free construction.
For engineers reviewing the IRFS3207ZTRRPBF datasheet, IRFS3207ZTRRPBF pinout, IRFS3207ZTRRPBF application, or IRFS3207ZTRRPBF equivalent, key selection criteria include its 4.1mΩ max. RDS(on), 120nC typical gate charge, 670A pulsed source current capability, and validated unclamped inductive switching performance up to 102A avalanche current.
Technical Context
This MOSFET employs a trench-gated HEXFET® structure with optimized cell pitch and epitaxial layer doping to achieve low on-resistance while maintaining robust avalanche energy rating (300mJ single-pulse) and fast, soft-recovery body diode behavior. Its dynamic parameters-including 33nC Miller charge and 960pF time-related output capacitance-are calibrated for high-efficiency 100–500kHz DC-DC converters.
The device integrates an intrinsic p-n junction body diode with 36–54ns reverse recovery time (TJ = 25–125°C) and 50–75nC Qrr, enabling reliable synchronous rectification without external Schottky assist. Thermal design leverages 0.50°C/W junction-to-case resistance in the D2Pak package for forced-air or heatsink-cooled operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 75V - Maximum blocking voltage before avalanche onset; supports 48V/54V bus designs with 20% margin. |
| RDS(on) typ. | 3.3mΩ - Enables ≤0.6W conduction loss at 120A DC, critical for high-current synchronous rectifiers. |
| Qg typ. | 120nC - Determines gate drive power requirement; compatible with standard 1A peak gate drivers at 300kHz. |
| EAS | 300mJ - Single-pulse avalanche energy rating; allows safe operation under unclamped inductive turn-off in UPS and motor drives. |
| trr / Qrr | 36–54ns / 50–75nC - Fast, low-charge body diode recovery reduces cross-conduction losses in synchronous buck stages. |
| RθJC | 0.50°C/W - Enables 120W continuous power dissipation with ≤60°C case-to-sink ΔT using standard thermal interface materials. |
| ISD pulsed | 670A - Peak source current rating supports high di/dt transient handling during LLC resonant tank commutation. |
Pinout & Package
D2Pak (TO-263AB) package with isolated drain tab, surface-mount footprint, and 3-pin configuration optimized for PCB thermal conduction and high-current routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; requires ≤10V logic-level drive; internal 0.8Ω gate resistance limits ringing. |
| Pin 2 (D) | Drain | Main high-side switching node; electrically connected to exposed copper pad for thermal and current path integrity. |
| Pin 3 (S) | Source | Power return and gate reference; low-inductance connection essential for stable high-dv/dt switching. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced body diode dV/dt capability | Validated >2.0V/ns recovery dv/dt margin prevents spurious turn-on in high-side synchronous rectifiers. |
| Fully characterized avalanche SOA | Graphically defined safe operating area up to 102A/100µs pulse width enables robust overcurrent protection design. |
| Lead-free & halogen-free construction | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1); compatible with lead-free reflow profiles up to 260°C. |
| Low Coss eff(TR) | 960pF - Reduces turn-off switching loss in hard-switched topologies compared to legacy 1200pF+ devices. |
| Improved gate ruggedness | Withstands ≥20V gate-source transients per JEDEC JESD22-A114; eliminates need for external gate clamping in most SMPS. |
Applications
| High-Efficiency Synchronous Rectification | Uninterruptible Power Supply (UPS) |
|---|---|
Use Scenario: Secondary-side switch in 48V-input telecom rectifiers delivering 12V/200A output. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by dedicated gate controller with 100ns dead-time. Use Value: Reduces conduction loss by 65% vs. 40V Schottky, improving full-load efficiency from 92.1% to 94.7%. |
Use Scenario: Inverter stage in line-interactive UPS converting 360V DC bus to 230V AC output. IC Role / Device Role / Timing Role: High-current half-bridge switch; operated in 50Hz PWM mode with bidirectional current capability. Use Value: Supports 670A pulsed source current during battery discharge surges without diode forward drop penalty. |
| Hard-Switched DC-DC Converters | High-Frequency SMPS |
Use Scenario: Primary-side switch in 300kHz LLC resonant converter for server VRM applications. IC Role / Device Role / Timing Role: High-side switching element; subjected to ZVS transitions with 75V VDS stress. Use Value: 3.3mΩ RDS(on) and 33nC Qgd minimize combined conduction and switching losses at 120A load. |
Use Scenario: Main switch in 1MHz boost PFC stage for industrial LED drivers. IC Role / Device Role / Timing Role: Fast-turning power switch; driven by high-speed gate driver with <20ns propagation delay. Use Value: 68ns rise/fall times and 120nC Qg enable clean 1MHz square-wave operation with <5% duty-cycle distortion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, 75V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N7F7 | 75V, 220A, 2.2mΩ typ., DFN8x8 package; lower RDS(on) but higher Qg (165nC). | Requires larger PCB area for thermal management; unsuitable for TO-263 socket replacement. | Select when board space permits and gate drive strength supports higher Qg. |
| IXFH120N75X3 | 75V, 120A, 4.0mΩ typ., TO-247 package; higher RDS(on) but superior 500mJ EAS. | Better suited for high-energy fault conditions; incompatible with D2Pak footprint. | Select for mission-critical industrial systems requiring extended avalanche endurance. |
Compared with STL220N7F7 and IXFH120N75X3, IRFS3207ZTRRPBF delivers optimal balance of low conduction loss, moderate gate charge, and D2Pak mountability-making it preferred for space-constrained, high-efficiency SMPS where thermal interface to heatsink is prioritized over ultra-low RDS(on).
Availability
IRFS3207ZTRRPBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply inverters, and hard-switched DC-DC converters requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRFS3207ZTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices since acquiring International Rectifier in 2015.
This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-current, high-frequency power conversion in industrial, computing, and telecom infrastructure where reliability under repetitive avalanche stress is mandatory.
FAQ
Is IRFS3207ZTRRPBF pin-compatible with IRFS3207ZPbF?
Yes-both share identical D2Pak (TO-263AB) pinout and electrical specifications. The "TRR" suffix denotes tape-and-reel packaging with right-hand orientation (vs. "TRL" for left-hand), with no functional or parametric difference. Standard mounting torque (10 lb·in) and thermal interface requirements apply to both.
What is the maximum recommended continuous drain current at 100°C case temperature?
The datasheet specifies 120A continuous drain current at TC = 25°C (package-limited), derating linearly to approximately 75A at TC = 100°C based on the 0.50°C/W RθJC and 175°C maximum junction temperature. This assumes adequate heatsinking and ≤60°C case-to-ambient gradient.
Does this MOSFET require a negative gate turn-off voltage to ensure reliable body diode commutation?
No-its gate threshold voltage (2.0–4.0V) and 0.8Ω internal gate resistance allow clean turn-off with 0V gate drive. Negative bias is unnecessary; however, active miller clamping or gate driver slew-rate control is recommended above 200V/ns dv/dt to prevent false turn-on during high-side synchronous operation.
Can IRFS3207ZTRRPBF be used in parallel configurations for higher current capacity?
Yes-its positive RDS(on) temperature coefficient (0.091V/°C) ensures inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors (≥5Ω) to damp oscillation. Derate total current by 15% for thermal margin across multiple devices.
IRFS3207ZTRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.1mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 170 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6920 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRFS3207ZTRRPBF FAQ
1.How can I place an order for IRFS3207ZTRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFS3207ZTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFS3207ZTRRPBF reliable?
The price and inventory of IRFS3207ZTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS3207ZTRRPBF is usually 5 days.
3.What payment methods are accepted for IRFS3207ZTRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS3207ZTRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFS3207ZTRRPBF?
IRFS3207ZTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFS3207ZTRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFS3207ZTRRPBF?
For technical support, including IRFS3207ZTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS3207ZTRRPBF requirements.
6.How does Aetrix verify that IRFS3207ZTRRPBF is sourced from the original manufacturer or authorized distributors?
All IRFS3207ZTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS3207ZTRRPBF meets industry standards.
7.What is the process for return or replacement of IRFS3207ZTRRPBF?
All IRFS3207ZTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS3207ZTRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFS3207ZTRRPBF part is unused and in its original packaging.
Return procedure for IRFS3207ZTRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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