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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS3306PBF

Name: IRFS3306PBF
Brand: Infineon Technologies
SKU: IRFS3306PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS3306PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS3306PBF.pdf

Description:: MOSFET N-CH 60V 120A D2PAK

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Product details

Overview

IRFS3306PBF from Infineon Technologies (formerly International Rectifier) is a 60V, 120A D2Pak-packaged N-channel HEXFET Power MOSFET optimized for high-frequency hard-switched SMPS topologies. It delivers 3.3 mΩ typical R_DS(on), 85 nC total gate charge, and enhanced body diode dV/dt/dI/dt ruggedness - enabling reliable synchronous rectification in server VRMs and UPS inverters.

For engineers reviewing the IRFS3306PBF datasheet, IRFS3306PBF pinout, IRFS3306PBF application, or IRFS3306PBF equivalent, key selection criteria include its 620 A pulsed source current capability, 31 ns reverse recovery time at 125°C, and SOA-validated avalanche energy of 160 mJ under unclamped inductive switching.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted body diode design to achieve low Q_gd/Q_g ratio (26/85 nC) and reduced C_oss effective capacitance (720 pF energy-related). Its gate threshold voltage (2.0–4.0 V) supports TTL- and 3.3V-compatible drive while maintaining robust noise immunity.

The device features fully characterized unclamped inductive switching (UIS) behavior up to 96 A avalanche current, with thermal-limited E_AS validated across –55°C to +175°C junction range. Its D2Pak package provides 0.65°C/W junction-to-case thermal resistance and supports PCB-mount thermal dissipation at 40°C/W ambient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage compatible with 48V bus architectures and 12V/24V industrial input stages.
R_DS(on) typ.	3.3 mΩ - Enables ≤1.2 W conduction loss at 60 A DC, critical for <95% efficiency in high-current synchronous rectifiers.
I_D (pkg-lim)	120 A - Package-limited continuous current defined by leadframe thermal capacity and solder joint reliability.
Q_g	85 nC - Gate drive energy requirement dictating minimum driver peak current (≥3 A @ 100 ns rise time) for 100 kHz+ operation.
t_rr	31 ns - Fast body diode recovery enables zero-voltage switching (ZVS) in phase-shifted full-bridge converters without snubbers.
E_AS	160 mJ - Single-pulse avalanche energy rating allowing safe operation during transient overvoltage events in motor drives and UPS hold-up circuits.
R_θJC	0.65 °C/W - Junction-to-case thermal resistance enabling direct heatsink mounting for >100 W continuous power dissipation.

Pinout & Package

D2Pak (TO-263AB) surface-mount package with isolated tab; thermally enhanced copper leadframe and gull-wing leads for automated reflow assembly. Tab is electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side power path	Electrically tied to exposed metal tab; requires insulated thermal interface to heatsink; carries full load current and fault energy.
Source	Power return reference node	Low-inductance connection point for current sensing and gate driver return; defines local ground for high-side switching.
Gate	Control terminal	High-impedance MOS control input requiring <100 nA leakage budget; sensitive to ESD and ringing; must be driven with <2.7 Ω series resistance.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	Rated for 1.5 V/ns diode recovery dv/dt without parasitic turn-on - eliminates need for external gate clamping in high-dV/dt SMPS layouts.
Lead-free, halogen-free construction	RoHS-compliant materials and termination meet IPC-J-STD-020 moisture sensitivity level 3 (MSL3), supporting standard reflow profiles.
SOA-characterized avalanche performance	Validated UIS operation up to 96 A with 100 μs pulse width - enables robust overcurrent protection in uninterruptible power supplies without external crowbar circuits.
Low C_oss effective capacitance	720 pF (energy-related) reduces turn-off switching loss and improves ZVS margin in resonant LLC converters operating above 300 kHz.

Applications

Server VRM Synchronous Rectifier

UPS Inverter Output Stage

Use Scenario: High-current 12V output stage in dual-phase server voltage regulator modules delivering up to 300 A per rail.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; commutated at 300–500 kHz with precise dead-time control.

Use Value: Reduces conduction loss by 40% vs. 40V Schottky, enabling >95% efficiency at 200 A load while maintaining <100°C case temperature.

Use Scenario: 48V DC-to-AC inverter output bridge in line-interactive UPS systems with battery backup.

IC Role / Device Role / Timing Role: High-side and low-side switch in full-bridge topology; operated in hard-switched 50/60 Hz fundamental with PWM-controlled harmonic suppression.

Use Value: Withstands 600 V DC bus transients and delivers 120 A peak output current with <1.3 V body diode forward drop for improved battery discharge efficiency.

Industrial Motor Drive Half-Bridge

Telecom DC-DC Intermediate Bus Converter

Use Scenario: 24–48V three-phase inverter half-bridge driving PMSM motors in factory automation actuators.

IC Role / Device Role / Timing Role: Upper-leg switching element in 20 kHz PWM-driven inverter leg; subjected to repetitive inductive flyback stress.

Use Value: 160 mJ single-pulse avalanche rating absorbs energy from 100 μH motor leakage inductance without failure during stall conditions.

Use Scenario: 48V-to-12V non-isolated buck converter supplying intermediate bus for base station RF amplifiers.

IC Role / Device Role / Timing Role: Primary power switch operating at 400 kHz with synchronous rectification on secondary side.

Use Value: 31 ns t_rr and 1.9 A I_RRM minimize reverse recovery losses, reducing thermal stress on adjacent MOSFETs and improving power density by 25%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60V, 220A, 2.2 mΩ R_DS(on), DFN8 5×6 mm package; lower R_DS(on) but higher Q_g (125 nC)	Requires higher gate drive power; better suited for space-constrained PCBs where thermal via density permits	Select when board area is limited and gate driver can supply ≥5 A peak current.
IXFH120N60X3	600V, 120A, 6.5 mΩ R_DS(on), TO-247 package; higher voltage rating but 96% higher conduction loss at 48V bus	Designed for 400V+ PFC stages; unsuitable for low-voltage synchronous rectification due to excessive V_DS drop	Avoid for 48V or lower systems; only consider if system requires 600V breakdown margin.

Compared with STL220N6F7 and IXFH120N60X3, IRFS3306PBF offers optimal balance of gate drive simplicity (85 nC), thermal performance (0.65°C/W), and 60V-specific optimization - making it preferred for cost-sensitive, high-volume 48V SMPS designs where layout area and driver complexity are constrained.

Availability

IRFS3306PBF is available at Aetrix Electronics and suitable for server VRMs, UPS inverters, and industrial motor drives requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for IRFS3306PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with core expertise in silicon-based power devices.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in telecom, computing, and industrial power conversion systems.

FAQ

What is the maximum recommended case temperature for continuous operation?

The IRFS3306PBF is rated for continuous operation up to 100°C case temperature, beyond which silicon-limited current drops from 120A to 110A. Derating follows a linear 1.5 W/°C slope above 25°C ambient, with absolute maximum junction temperature fixed at 175°C per datasheet Figure 9.

Does this MOSFET require a negative gate turn-off voltage?

No - the IRFS3306PBF has a gate threshold voltage range of 2.0–4.0 V and is fully compatible with 0 V to 10 V gate drive. Negative turn-off voltage is not required or recommended; applying –5 V may accelerate gate oxide wear per reliability testing in AN-994.

Can it replace IRFB3306PbF in existing TO-220AB designs?

No - IRFS3306PBF uses D2Pak (TO-263) packaging with gull-wing leads and an isolated drain tab, whereas IRFB3306PbF uses through-hole TO-220AB with non-isolated tab. Mechanical and thermal mounting differ fundamentally; PCB redesign and thermal interface requalification are mandatory.

Is the body diode suitable for bidirectional current flow in synchronous rectification?

Yes - the integrated body diode is characterized for 160 A continuous and 620 A pulsed source current (IS/ISM), with 31 ns t_rr and 1.3 V V_SD at 75 A. It supports bidirectional conduction in synchronous buck and LLC topologies when properly timed, but requires gate drive coordination to avoid cross-conduction.

IRFS3306PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4520 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS3306PBF FAQ

1.How can I place an order for IRFS3306PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS3306PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS3306PBF reliable?

The price and inventory of IRFS3306PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS3306PBF is usually 5 days.

3.What payment methods are accepted for IRFS3306PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS3306PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS3306PBF?

IRFS3306PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS3306PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS3306PBF?

For technical support, including IRFS3306PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS3306PBF requirements.

6.How does Aetrix verify that IRFS3306PBF is sourced from the original manufacturer or authorized distributors?

All IRFS3306PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS3306PBF meets industry standards.

7.What is the process for return or replacement of IRFS3306PBF?

All IRFS3306PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS3306PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS3306PBF part is unused and in its original packaging.

Return procedure for IRFS3306PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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