Infineon Technologies IRFS3307

Overview

IRFS3307 from Infineon Technologies is a 75V, 120A (T_C=25°C), N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package with R_DS(on) typ. 5.0 mΩ and enhanced body diode dV/dt/dI/dt capability. It delivers high-efficiency synchronous rectification in SMPS and supports hard-switched, high-frequency power conversion up to 500 kHz in UPS and industrial DC-DC stages.

For engineers reviewing the IRFS3307 datasheet, IRFS3307 pinout, IRFS3307 application, or IRFS3307 equivalent, key selection criteria include its 75V V_(BR)DSS, 5.0 mΩ R_DS(on), 120A continuous drain rating at 25°C, avalanche ruggedness (E_AS = 510 mJ), and optimized gate charge (Q_g = 120–180 nC) for fast switching with low drive loss.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted body diode design to achieve simultaneous improvement in dynamic dV/dt ruggedness (11 V/ns), reverse recovery performance (t_rr = 38–57 ns), and unclamped inductive switching robustness. Its SOA is fully characterized across pulse widths from 10 μs to DC, with thermal derating defined by R_θJC = 0.61 °C/W.

The device features tightly controlled gate threshold voltage (V_GS(th) = 2.0–4.0 V), low Crss (250 pF), and Coss_eff(TR) = 700 pF - enabling stable operation in ZVS and resonant topologies where output capacitance linearity impacts timing predictability and snubber loss.

Key Specifications

Pinout & Package

IRFS3307 is housed in a TO-220AB package with isolated tab (non-conductive mounting surface), standard 3-pin layout, and screw-mount mechanical interface (6-32 or M3, torque 10 lb·in / 1.1 N·m). The case is electrically connected to the Drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 75V power switching applications.

Compared with STL220N75F7 and IXFH120N75X3, IRFS3307 offers optimal balance of TO-220AB mechanical compatibility, 510 mJ avalanche margin, and 120–180 nC gate charge - making it the preferred choice for retrofit, service, and industrial UPS designs where mounting heritage and ruggedness outweigh ultra-low R_DS(on) or surface-mount density.

Availability

IRFS3307 is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and hard-switched industrial DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IRFS3307 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, high-ruggedness switching in mission-critical power conversion systems including server VRMs, telecom rectifiers, and industrial UPS.

FAQ

Is IRFS3307 suitable for surface-mount assembly?

No. The TO-220AB package is explicitly not recommended for surface-mount applications per Infineon's datasheet (Note on page 8). Its mechanical design requires through-hole mounting with screw-based heatsink attachment and thermal interface material. Reflow soldering risks solder joint fracture and thermal delamination due to CTE mismatch and lack of pad anchoring.

What is the maximum allowable continuous drain current at 100°C case temperature?

The datasheet specifies ID @ TC = 100°C as 84 A at VGS = 10 V. This value is thermally limited by RθJC = 0.61 °C/W and TJmax = 175°C, not by package current rating. At TC = 100°C, junction temperature reaches 175°C with 84 A, confirming safe continuous operation within absolute maximum ratings.

Does IRFS3307 have a fully rated body diode for bidirectional current flow?

Yes. The intrinsic body diode is rated for IS = 130 A continuous and ISM = 510 A pulsed (≤100 μs), with VSD = 1.3 V at 75 A and trr = 38–57 ns. Its dV/dt and dI/dt capability (11 V/ns, 530 A/μs) is validated for hard-commutated freewheeling in bridge configurations without external diodes.

How does the gate threshold voltage shift with temperature?

VGS(th) decreases linearly with rising junction temperature, from ~4.0 V at –55°C to ~2.0 V at 175°C (Fig. 16). At TJ = 125°C, typical VGS(th) is ~2.6 V. This negative tempco requires gate drive circuits to maintain sufficient overdrive (>3 V margin) across the full operating range to avoid partial turn-on and increased RDS(on).