Infineon Technologies IRFS3307PBF

Overview

IRFS3307PBF from Infineon Technologies is a 75V, 120A (T_C=25°C), N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package with 5.0 mΩ typical R_DS(on), 120 nC total gate charge, and enhanced body diode dV/dt/dI/dt capability-designed for high-frequency hard-switched SMPS synchronous rectification.

For engineers reviewing the IRFS3307PBF datasheet, IRFS3307PBF pinout, IRFS3307PBF application, or IRFS3307PBF equivalent, key selection criteria include avalanche ruggedness (E_AS = 510 mJ), SOA-limited continuous current (75A package-limited), body diode reverse recovery (Q_rr = 65–98 nC), and thermal resistance (R_θJC = 0.61 °C/W).

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted body diode design to achieve low R_DS(on) while maintaining robust unclamped inductive switching (UIS) performance. Its gate threshold voltage (2.0–4.0 V) and 1.5 Ω gate input resistance support standard 10 V logic-level drive.

The device features fully characterized C_iss (5150 pF), C_oss (460 pF), and C_rss (250 pF) with energy-related effective output capacitance (C_{oss eff.(ER)} = 570 pF), enabling accurate loss modeling in >100 kHz ZVS/ZCS topologies and high-efficiency LLC resonant converters.

Key Specifications

Pinout & Package

IRFS3307PBF uses the industry-standard TO-220AB package (3-pin, through-hole, isolated tab). The metal tab is electrically connected to the Drain terminal and must be insulated from heatsink unless system grounding scheme permits direct connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 75 V power MOSFET applications.

Compared with STP120N75F7 and IXTH120N075L2, IRFS3307PBF offers superior avalanche ruggedness (510 mJ vs. ≤420 mJ) and an isolated TO-220AB tab-critical for grounded-heatsink designs in telecom and industrial UPS where safety certification and layout simplicity are prioritized over minimal R_DS(on).

Availability

IRFS3307PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in server VRMs, industrial uninterruptible power supplies, telecom rectifier modules, and EV onboard charger PFC stages requiring stable component supply across multi-year production cycles.

Supply support for IRFS3307PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certifications including IATF 16949 and ISO 9001.

IRFS3307PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-current switching in switched-mode power supplies, UPS systems, and motor control inverters where ruggedness and thermal efficiency are paramount.

FAQ

Is IRFS3307PBF suitable for surface-mount assembly?

No-IRFS3307PBF uses the TO-220AB package, which is explicitly not recommended for surface-mount applications per Infineon's datasheet note. It requires through-hole mounting with mechanical screw attachment to a heatsink. Surface-mount alternatives include D2Pak variants like IRFB3307PbF, which share identical electrical specs but differ in thermal and mechanical interface.

What is the maximum allowable case temperature for continuous operation?

The maximum continuous case temperature is 100°C, beyond which the device's 75 A package-limited current rating must be linearly derated at 1.3 W/°C (equivalent to 1.3 A/°C based on R_DS(on) and power dissipation). At T_C = 100°C, the safe continuous current drops to approximately 50 A to maintain T_J ≤ 175°C.

Does IRFS3307PBF have a built-in body diode, and how is it characterized?

Yes-it integrates a monolithic, fast-recovery, integral p-n junction body diode rated for 130 A continuous source current (I_S) and 510 A pulsed (I_SM). Key parameters include V_SD = 1.3 V (max), t_rr = 38–57 ns, Q_rr = 65–98 nC, and dV/dt capability of 11 V/ns-enabling use in synchronous rectification without external diodes.

How does the gate threshold voltage vary with temperature?

V_GS(th) decreases linearly with rising junction temperature, ranging from ~4.0 V at –55°C to ~2.0 V at 175°C (measured at I_D = 150 μA). This negative temperature coefficient improves current sharing in parallel configurations but requires gate drive design to avoid unintended turn-on near T_Jmax.