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Infineon Technologies IRFS3307TRLPBF
- Part No.:
- IRFS3307TRLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFS3307TRLPBF.pdf
- Description:
- MOSFET N-CH 75V 120A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,444
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Product details
Overview
IRFS3307TRLPBF from Infineon Technologies is a 75V, 120A N-channel enhancement-mode HEXFET® Power MOSFET in D2Pak (TO-263) package, optimized for high-frequency hard-switched and synchronous rectification applications with 5.0 mΩ typical RDS(on), 120 nC total gate charge, and enhanced body diode dV/dt (11 V/ns) and dI/dt capability. It delivers robust avalanche performance (510 mJ EAS) and operates up to 175°C junction temperature.
For engineers reviewing the IRFS3307TRLPBF datasheet, IRFS3307TRLPBF pinout, IRFS3307TRLPBF application, or IRFS3307TRLPBF equivalent, key selection criteria include its low conduction loss at high current, fast switching dynamics (tr = 120 ns, tf = 63 ns), body diode recovery characteristics (Qrr = 65–98 nC), and thermal resistance (RθJA = 40°C/W on PCB mount).
Technical Context
This MOSFET employs planar silicon process technology with optimized cell layout to achieve high current density and improved ruggedness against unclamped inductive switching (UIS) and repetitive avalanche stress. Its gate structure reduces Miller capacitance (Crss = 250 pF) and enables stable operation under high dV/dt (≥11 V/ns) during diode recovery.
The device integrates an intrinsic body diode with low forward voltage (VSD = 1.3 V) and controlled reverse recovery (trr = 38–57 ns), making it suitable for synchronous rectification where diode conduction and commutation losses dominate efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 75 V - Maximum drain-to-source blocking voltage; defines safe operating range in 48V bus and UPS output stages. |
| RDS(on) typ. | 5.0 mΩ @ VGS = 10 V, TJ = 25°C - Enables <1 W conduction loss at 120 A DC, critical for high-efficiency SMPS designs. |
| Qg | 120 nC max - Determines gate drive power requirement and switching speed; supports >200 kHz operation with moderate gate driver strength. |
| tr/tf | 120 ns / 63 ns - Fast edge rates reduce switching transition time, minimizing overlap loss in hard-switched topologies. |
| EAS | 510 mJ - Single-pulse avalanche energy rating ensures reliability during transient overvoltage events without external snubbers. |
| Coss eff. (TR) | 700 pF - Time-related effective output capacitance used to calculate turn-off delay and resonant behavior in LLC or phase-shifted full-bridge converters. |
| VSD | 1.3 V max - Low body diode forward drop reduces conduction loss during freewheeling, improving synchronous rectifier efficiency. |
Pinout & Package
D2Pak (TO-263) surface-mount package with isolated tab (drain-connected), designed for high-current PCB mounting using thermal pad and solder reflow. Thermal resistance RθJA = 40°C/W on FR-4 PCB (1" square).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to power ground or synchronous rectifier return path; carries full load current. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET gate; requires 10 V for full enhancement; sensitive to ESD and ringing due to Qg = 120 nC. |
| Pin 3 (Drain) | Power output (D) | Connected to internal die backside; electrically tied to exposed copper tab; must be isolated from heatsink unless referenced to same potential. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced avalanche ruggedness | 510 mJ single-pulse EAS with validated thermal failure model - eliminates need for external clamping in UPS and motor drive inductive loads. |
| Optimized body diode recovery | Qrr = 65–98 nC and dV/dt = 11 V/ns - reduces voltage overshoot and EMI during commutation in synchronous buck and LLC converters. |
| Low Coss with defined energy equivalence | Coss eff. (ER) = 570 pF - enables accurate calculation of turn-off energy loss (Eoff ≈ ½·Coss·VDS²) in high-frequency designs. |
| Thermally robust construction | RθJC = 0.61°C/W - supports >100 W continuous power dissipation with minimal heatsink when mounted on 1"² copper area. |
| Lead-free and RoHS-compliant | Meets JEDEC J-STD-020 moisture sensitivity level 1 - allows standard reflow profiles without baking or special handling. |
Applications
| Server VRM Synchronous Rectification | Industrial UPS Output Stage |
|---|---|
|
Use Scenario: High-current (≥100 A), high-efficiency 12V-to-1V conversion in AI accelerator server VRMs operating at 500–1000 kHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diodes; switched by dedicated gate driver with precise dead-time control. Use Value: 5.0 mΩ RDS(on) cuts conduction loss by >40% vs. 6.5 mΩ alternatives; fast tr/tf minimizes shoot-through risk at sub-100 ns dead times. |
Use Scenario: 48V DC output stage of online double-conversion UPS delivering 3 kVA with battery backup and zero-transfer-time switchover. IC Role / Device Role / Timing Role: Primary-side high-current switch in half-bridge inverter driving transformer-coupled output; handles 120 A peak load current. Use Value: 510 mJ EAS withstands bus transients during battery switchover; 175°C TJmax ensures reliability under sustained overload conditions. |
| Telecom Rectifier Module | EV Onboard Charger PFC Switch |
|
Use Scenario: 48V/50A telecom rectifier module converting AC to regulated DC with >96% efficiency and forced-air cooling. IC Role / Device Role / Timing Role: Main switching element in interleaved boost PFC stage operating at 100 kHz with critical conduction mode (CrCM). Use Value: Low Qg (120 nC) and Ciss = 5150 pF enable efficient CrCM operation; enhanced dV/dt immunity prevents false turn-on from noise coupling. |
Use Scenario: 6.6 kW bidirectional OBC in EVs using totem-pole PFC topology with 750 V DC link and 120 A RMS input current. IC Role / Device Role / Timing Role: High-side switch in totem-pole bridge; conducts during positive half-cycle and blocks during negative half-cycle with body diode freewheeling. Use Value: Controlled body diode VSD = 1.3 V and trr = 38–57 ns minimize reverse recovery loss and EMI; 75 V rating suits split-rail 375 V configurations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, high-ruggedness N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N7F3AG | RDS(on) = 3.2 mΩ typ., Qg = 150 nC, VDSS = 75 V, DFN8 5×6 mm package | Lower RDS(on) improves conduction loss but higher Qg increases gate drive loss; smaller footprint limits thermal mass. | Prefer for space-constrained, air-cooled telecom modules where board area is premium and gate drive capability is available. |
| IXFH120N075T2 | RDS(on) = 5.5 mΩ typ., Qg = 105 nC, VDSS = 75 V, TO-247AC package | Higher RDS(on) but lower Qg and superior RθJC = 0.45°C/W; larger through-hole package supports higher mechanical reliability. | Prefer for industrial UPS and motor drives requiring maximum thermal margin and vibration resistance in harsh environments. |
Compared with STL220N7F3AG and IXFH120N075T2, IRFS3307TRLPBF offers the best balance of low RDS(on), moderate Qg, and proven D2Pak thermal performance on PCB - ideal for high-volume, cost-sensitive server and telecom power supplies where surface-mount assembly and thermal pad integration are standard.
Availability
IRFS3307TRLPBF is available at Aetrix Electronics and suitable for server VRM design, industrial UPS systems, telecom rectifier modules, and EV onboard charger PFC stages requiring stable component supply and long-term production continuity.
Supply support for IRFS3307TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.
IRFS3307TRLPBF belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in demanding power conversion applications including datacenter, telecom, and renewable energy systems.
FAQ
What is the maximum continuous drain current for IRFS3307TRLPBF at 100°C case temperature?
The maximum continuous drain current at TC = 100°C is 84 A, derated from the 120 A rating at 25°C using the linear derating factor of 1.3 W/°C and thermal resistance RθJC = 0.61°C/W. This reflects package-limited current rather than silicon-limited current, which remains thermally viable up to 175°C junction temperature.
Does IRFS3307TRLPBF have a fully characterized avalanche SOA?
Yes - the datasheet provides validated single-pulse avalanche energy (EAS = 510 mJ) and repetitive avalanche curves (EAR vs. IAV and temperature), derived from standardized unclamped inductive switching tests per JEDEC standards. The device is rated for safe operation within these boundaries without external protection.
Can IRFS3307TRLPBF be used in synchronous rectification with zero-voltage switching (ZVS)?
Yes - its low Coss eff. (TR) = 700 pF and controlled body diode recovery (trr = 38–57 ns, Qrr = 65–98 nC) support reliable ZVS turn-on in LLC and phase-shifted full-bridge topologies. However, ZVS initiation depends on circuit design (leakage inductance, resonant frequency), not solely on MOSFET parameters.
Is the D2Pak package of IRFS3307TRLPBF compatible with standard reflow soldering processes?
Yes - the device is qualified per JEDEC J-STD-020 Level 1 (MSL-1), meaning it can be subjected to standard lead-free reflow profiles (peak 260°C) without preconditioning or baking. The exposed drain tab requires full-solder coverage on a thermally enhanced PCB pad for optimal RθJA = 40°C/W performance.
IRFS3307TRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6.3mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 180 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5150 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRFS3307TRLPBF FAQ
1.How can I place an order for IRFS3307TRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFS3307TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFS3307TRLPBF reliable?
The price and inventory of IRFS3307TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS3307TRLPBF is usually 5 days.
3.What payment methods are accepted for IRFS3307TRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS3307TRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFS3307TRLPBF?
IRFS3307TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFS3307TRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFS3307TRLPBF?
For technical support, including IRFS3307TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS3307TRLPBF requirements.
6.How does Aetrix verify that IRFS3307TRLPBF is sourced from the original manufacturer or authorized distributors?
All IRFS3307TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS3307TRLPBF meets industry standards.
7.What is the process for return or replacement of IRFS3307TRLPBF?
All IRFS3307TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS3307TRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFS3307TRLPBF part is unused and in its original packaging.
Return procedure for IRFS3307TRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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