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Infineon Technologies IRFS3307ZPBF
- Part No.:
- IRFS3307ZPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFS3307ZPBF.pdf
- Description:
- MOSFET N-CH 75V 120A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,106
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Product details
Overview
IRFS3307ZPBF from Infineon Technologies (formerly International Rectifier) is a 75 V, 120 A (package-limited), N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 package, optimized for high-frequency hard-switched and synchronous rectification applications. It features 4.6 mΩ typical RDS(on), 79 nC total gate charge, 420 pF output capacitance, and enhanced body diode dV/dt and dI/dt capability for robust unclamped inductive switching.
For engineers reviewing the IRFS3307ZPBF datasheet, IRFS3307ZPBF pinout, IRFS3307ZPBF application, or IRFS3307ZPBF equivalent, key selection criteria include its 75 V VDSS, 120 A continuous drain rating at TC = 25°C, 0.65 °C/W RθJC, 33 ns typ. reverse recovery time, and avalanche-rated operation up to 300 mJ single-pulse energy.
Technical Context
This MOSFET employs planar silicon-gate technology with optimized cell layout to achieve low conduction loss and fast switching while maintaining ruggedness under repetitive avalanche stress. Its gate threshold voltage (2.0–4.0 V) and 0.70 Ω internal gate resistance support stable drive in high-speed SMPS topologies.
The device integrates an intrinsic body diode with 1.3 V forward voltage at 75 A and 39 ns typ. reverse recovery time at 125°C - enabling reliable synchronous rectification without external diodes in DC/DC converters and UPS systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 75 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48 V and 60 V industrial power rails. |
| RDS(on) max | 5.8 mΩ - Worst-case on-resistance at TJ = 125°C and VGS = 10 V; determines conduction loss and thermal rise at full load. |
| ID (pkg) | 120 A - Package-limited continuous drain current at TC = 25°C; constrained by leadframe and bond wire capacity, not silicon. |
| Qg typ | 79 nC - Total gate charge required for full turn-on; directly impacts gate driver power and switching loss in >100 kHz designs. |
| trr typ | 33 ns - Body diode reverse recovery time at TJ = 25°C; critical for minimizing shoot-through and EMI in synchronous buck stages. |
| EAS max | 300 mJ - Single-pulse avalanche energy rating; enables safe operation during transient overvoltage events without snubber circuits. |
| RθJC | 0.65 °C/W - Junction-to-case thermal resistance; defines minimum heatsink requirement for 120 A continuous operation. |
Pinout & Package
IRFS3307ZPBF uses a TO-262 (ISOTOP) package with three leads: Gate (G), Drain (D), and Source (S). The drain is internally connected to the metal tab for low-inductance heat transfer and high-current return path integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | Receives 10 V logic-level drive; 0.70 Ω internal resistance limits ringing but requires ≥2 A peak gate driver capability. |
| D | High-side power terminal | Connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits direct mounting. |
| S | Source return node | Serves as local power ground reference for gate drive; low-inductance PCB routing essential to minimize switching overshoot. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced body diode dV/dt capability | Rated for >1.5 V/ns diode recovery dv/dt - prevents parasitic turn-on during high-slew-rate commutation in LLC resonant converters. |
| Full avalanche characterization | Specified EAS = 300 mJ and IAR = 120 A - allows design without external clamping in UPS and motor drive fault conditions. |
| Low Coss eff. (TR) | 410 pF - time-related effective output capacitance reduces turn-off delay and improves zero-voltage switching (ZVS) margin in phase-shifted full-bridge designs. |
| Thermally robust SOA | SOA curve validated up to 10 ms pulse width - supports high peak-current burst modes in server VRMs and telecom rectifiers. |
| Lead-free and RoHS compliant | "PBF" suffix confirms Pb-free termination and halogen-free construction - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1). |
Applications
| Server VRM High-Side Switch | Telecom Rectifier Synchronous FET |
|---|---|
Use Scenario: Primary-side switch in multiphase buck converters delivering 50–200 A at 0.8–1.8 V to CPU/GPU cores. IC Role / Device Role / Timing Role: High-side power switch operating at 300–600 kHz with tight dead-time control to prevent shoot-through. Use Value: 4.6 mΩ RDS(on) minimizes conduction loss at 120 A; 33 ns trr ensures clean body diode commutation during light-load discontinuous conduction mode (DCM). |
Use Scenario: Secondary-side synchronous rectifier in 48 V input telecom rectifiers converting to +12 V or +54 V outputs. IC Role / Device Role / Timing Role: Low-side FET replacing Schottky diode in forward or active-clamp forward topology. Use Value: 1.3 V VSD and 512 A pulsed source rating enable >96% efficiency at full load; TO-262 package allows direct heatsink mounting for <1.2 °C/W thermal path. |
| Industrial UPS Inverter Stage | EV Onboard Charger PFC Switch |
Use Scenario: Half-bridge leg in 3–5 kVA uninterruptible power supplies delivering pure sine-wave 230 V AC output. IC Role / Device Role / Timing Role: Hard-switched inverter switch operating at 16–20 kHz with unclamped inductive loads. Use Value: 300 mJ EAS and 120 A IAR eliminate need for external RCD snubbers; 0.65 °C/W RθJC sustains 120 A peak current during battery backup overload. |
Use Scenario: Boost switch in bidirectional OBC PFC stage handling 6.6 kW AC/DC conversion at 100 kHz switching frequency. IC Role / Device Role / Timing Role: High-efficiency, high-reliability main switch in interleaved totem-pole or boost PFC. Use Value: 79 nC Qg enables efficient SiC gate driver pairing; enhanced dI/dt capability (≤1570 A/μs) suppresses oscillation during fast current transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N7F7 | 75 V, 220 A (TC = 25°C), RDS(on) max = 3.0 mΩ, Qg = 105 nC, TO-247 package | Higher current rating but larger footprint and higher gate charge; requires stronger gate driver and more board area. | Preferred where >150 A continuous current is needed and thermal mass allows TO-247 mounting. |
| IXFH70N60X3 | 600 V, 70 A, RDS(on) max = 19 mΩ, Qg = 115 nC, TO-247 package | Higher voltage rating but significantly higher RDS(on) and lower current capability; unsuitable for 48 V bus applications. | Only viable if system requires 600 V blocking and can accept 4× higher conduction loss at same current. |
Compared with STL220N7F7 and IXFH70N60X3, IRFS3307ZPBF offers optimal balance of 75 V rating, 120 A package-limited current, and 79 nC gate charge in compact TO-262 - making it uniquely suited for space-constrained, high-frequency 48 V industrial and telecom power stages.
Availability
IRFS3307ZPBF is available at Aetrix Electronics and suitable for server VRMs, telecom rectifiers, industrial UPS inverters, and EV onboard charger PFC stages requiring stable component supply and long-term production continuity.
Supply support for IRFS3307ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with core expertise in silicon and wide-bandgap technologies.
IRFS3307ZPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in hard-switched and synchronous rectification power supplies across computing, telecom, and industrial infrastructure.
FAQ
Is IRFS3307ZPBF pin-compatible with IRFB3307ZPBF?
No. IRFS3307ZPBF uses TO-262 (3-lead straight lead) packaging, while IRFB3307ZPBF uses D2PAK (TO-263) with gull-wing surface-mount leads. Pin functions (G/D/S) are identical, but mechanical mounting, thermal interface, and PCB footprint differ fundamentally - direct substitution requires board redesign.
What is the maximum recommended case temperature for continuous 120 A operation?
The 120 A rating is specified at TC = 25°C. For continuous operation at full rated current, case temperature must be maintained ≤65°C per the derating curve in Figure 9 - exceeding this requires reducing current linearly at 1.5 A/°C above 65°C to avoid exceeding TJmax = 175°C.
Does IRFS3307ZPBF support gate drive voltages below 10 V?
Yes - VGS(th) is 2.0–4.0 V, so the device turns on with logic-level drive. However, RDS(on) increases sharply below 10 V: at VGS = 4.5 V, RDS(on) is ~3× higher than at 10 V, increasing conduction loss significantly - 10 V drive is strongly recommended for rated current operation.
Can IRFS3307ZPBF be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(on) (see Fig 4) enables inherent current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and individual source resistors (10–20 mΩ) to damp high-frequency oscillation and ensure balanced dynamic current distribution.
IRFS3307ZPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.8mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4750 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 230W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRFS3307ZPBF FAQ
1.How can I place an order for IRFS3307ZPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFS3307ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFS3307ZPBF reliable?
The price and inventory of IRFS3307ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS3307ZPBF is usually 5 days.
3.What payment methods are accepted for IRFS3307ZPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS3307ZPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFS3307ZPBF?
IRFS3307ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFS3307ZPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFS3307ZPBF?
For technical support, including IRFS3307ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS3307ZPBF requirements.
6.How does Aetrix verify that IRFS3307ZPBF is sourced from the original manufacturer or authorized distributors?
All IRFS3307ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS3307ZPBF meets industry standards.
7.What is the process for return or replacement of IRFS3307ZPBF?
All IRFS3307ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS3307ZPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFS3307ZPBF part is unused and in its original packaging.
Return procedure for IRFS3307ZPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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