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Infineon Technologies IRFS3507TRLPBF
- Part No.:
- IRFS3507TRLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFS3507TRLPBF.pdf
- Description:
- MOSFET N-CH 75V 97A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,260
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Product details
Overview
IRFS3507TRLPBF from Infineon Technologies is a 75V, 97A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-frequency hard-switched and synchronous rectification applications. It features 7.0 mΩ typical RDS(on), 88 nC total gate charge, 340 pF output capacitance, and enhanced body diode dV/dt and dI/dt capability-enabling robust operation in SMPS and UPS systems.
For engineers reviewing the IRFS3507TRLPBF datasheet, IRFS3507TRLPBF pinout, IRFS3507TRLPBF application, or IRFS3507TRLPBF equivalent, key selection criteria include avalanche energy rating (300 mJ), junction-to-case thermal resistance (0.77 °C/W), body diode reverse recovery time (37–56 ns), and SOA compliance up to 100 µs at 58 A.
Technical Context
This MOSFET employs planar silicon process with optimized cell geometry to deliver low conduction loss while maintaining high dynamic ruggedness. Its gate threshold voltage (2.0–4.0 V) and 1.3 Ω gate input resistance support standard 10 V logic-level drive, and its Coss eff.(TR) of 520 pF enables predictable turn-off timing in high-dV/dt environments.
The integrated body diode exhibits 1.3 V forward voltage at 58 A and 32–48 nC reverse recovery charge, enabling reliable freewheeling in synchronous buck converters. Avalanche performance is thermally limited with EAS = 300 mJ (single-pulse, TJ = 25°C), validated under L = 0.17 mH, RG = 25 Ω, and IAS = 58 A conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 75 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48 V bus applications. |
| RDS(on) typ. | 7.0 mΩ - Conduction loss of ~0.066 W at 97 A DC; enables high-efficiency power stages below 100 W output. |
| Qg | 88 nC - Total gate charge required for full enhancement; determines driver current demand and switching loss trade-off. |
| Coss | 340 pF - Output capacitance at VDS = 25 V; impacts zero-voltage switching feasibility and snubber design. |
| trr | 37–56 ns - Body diode reverse recovery time; critical for minimizing shoot-through risk in synchronous rectifiers. |
| EAS | 300 mJ - Single-pulse avalanche energy rating; supports unclamped inductive switching without failure under defined test conditions. |
| RθJC | 0.77 °C/W - Junction-to-case thermal resistance; allows direct heatsink mounting with predictable temperature rise under 97 A continuous load. |
Pinout & Package
IRFS3507TRLPBF uses the TO-220AB package with through-hole mounting and isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulating hardware when mounted to grounded heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current-carrying terminal (high-side switch node) | Electrically tied to metal tab; must be insulated from heatsink unless system ground reference permits direct connection. |
| Source | Reference node for gate drive and current return path | Low-impedance return for load current and gate drive loop; critical for minimizing common-source inductance in high-dI/dt operation. |
| Gate | Control electrode for channel modulation | High-impedance input requiring <200 nA leakage handling; sensitive to ESD and ringing-requires local RC snubber or gate resistor ≥5.6 Ω. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced avalanche ruggedness | 300 mJ single-pulse EAS with validated thermal failure boundary-supports reliable operation in unclamped inductive switching. |
| Optimized body diode dV/dt immunity | Rated for >1000 V/ns recovery dv/dt-reduces risk of parasitic turn-on during high-speed commutation in half-bridge topologies. |
| Low Coss eff.(TR) | 520 pF effective output capacitance (time-related)-enables accurate dead-time calculation and ZVS design in resonant converters. |
| Characterized SOA curves | Full Safe Operating Area data provided up to 10 ms pulse width-supports design validation for transient overload and startup surge conditions. |
| Lead-free and RoHS-compliant | Meets JEDEC J-STD-020 reflow profile for Pb-free soldering; compatible with standard 260°C peak temperature assembly processes. |
Applications
| Server VRM Synchronous Rectifier | Industrial UPS Inverter Stage |
|---|---|
Use Scenario: High-current, high-frequency buck converter in 12 V input server voltage regulator modules delivering up to 200 A per phase. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; switched at 300–600 kHz with precise gate timing to minimize conduction and switching losses. Use Value: 7.0 mΩ RDS(on) reduces conduction loss by >60% vs. 40 V Schottky; fast 37 ns trr prevents cross-conduction during dead-time. |
Use Scenario: Bidirectional DC-AC inverter stage in 48 V battery-backed uninterruptible power supply with 1–3 kVA output. IC Role / Device Role / Timing Role: Hard-switched bridge leg switch; operated at 16–25 kHz with active clamping and overcurrent protection. Use Value: 300 mJ EAS withstands transformer leakage inductance spikes; 0.77 °C/W RθJC sustains 97 A continuous current with forced-air cooling. |
| Telecom DC-DC Brick | Motor Drive Half-Bridge |
Use Scenario: Isolated 48 V to 12 V intermediate bus converter in telecom power shelf with strict efficiency and footprint requirements. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; driven with adaptive dead-time control. Use Value: 88 nC Qg enables efficient gate driving with low-power controllers; 340 pF Coss supports soft-switching transitions above 200 kHz. |
Use Scenario: 750 W BLDC motor inverter for industrial automation, operating at 10–20 kHz PWM with regenerative braking. IC Role / Device Role / Timing Role: High-side switch in three-phase half-bridge; subjected to repetitive inductive flyback and body diode conduction. Use Value: Enhanced dI/dt capability (390 A/µs) prevents diode latch-up during rapid current reversal; 1.3 V VSD minimizes freewheeling loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP90NF03L | 30 V VDSS, 90 A, 4.5 mΩ RDS(on), TO-220 package | Limited to ≤30 V systems; lower voltage rating precludes use in 48 V bus or UPS inverters. | Select only for sub-30 V DC-DC where lower RDS(on) justifies reduced blocking capability. |
| IXTH96N10L2 | 100 V VDSS, 96 A, 10.5 mΩ RDS(on), TO-247 package | Higher voltage margin but higher on-resistance and larger footprint; requires different heatsink interface. | Prefer for 100 V systems or where higher avalanche margin outweighs efficiency penalty and board space cost. |
Compared with STP90NF03L and IXTH96N10L2, IRFS3507TRLPBF offers optimal balance of 75 V rating, 7.0 mΩ conduction loss, and TO-220 thermal performance-making it uniquely suited for 48 V industrial SMPS where both voltage headroom and efficiency are constrained.
Availability
IRFS3507TRLPBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and hard-switched motor drive half-bridges requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRFS3507TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
This device belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in server, telecom, and industrial UPS applications where dynamic ruggedness and thermal stability are critical.
FAQ
Is IRFS3507TRLPBF pin-compatible with IRFB3507PbF?
No. IRFS3507TRLPBF uses TO-220AB packaging with drain-connected tab, while IRFB3507PbF is in D2Pak (TO-263) with exposed drain pad. Pin assignments differ: TO-220AB has Drain-Source-Gate (tab-S-G), whereas D2Pak uses Source-Drain-Gate (S-D-G) layout. Mechanical and thermal mounting methods are incompatible.
What is the maximum recommended continuous drain current at 100°C case temperature?
The datasheet specifies 69 A continuous drain current at TC = 100°C with VGS = 10 V. This value accounts for RDS(on) increase with temperature and thermal derating-exceeding it risks exceeding TJmax = 175°C even with adequate heatsinking.
Does IRFS3507TRLPBF require a negative gate turn-off voltage?
No. The device operates reliably with 0 V gate turn-off. Its gate threshold voltage (2.0–4.0 V) ensures full depletion at 0 V, and no negative bias is specified or required for safe operation-even under high dV/dt conditions-provided gate drive impedance limits ringing.
Can IRFS3507TRLPBF be used in parallel configurations?
Yes, but with strict layout and gate drive matching. The positive RDS(on) temperature coefficient (0.070 V/°C) provides inherent current sharing, yet mismatched gate loop inductance or trace resistance can cause imbalance. Use individual 5.6 Ω gate resistors and symmetrical PCB routing to ensure <5% current deviation at full load.
IRFS3507TRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 97A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8.8mOhm @ 58A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3540 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRFS3507TRLPBF FAQ
1.How can I place an order for IRFS3507TRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFS3507TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFS3507TRLPBF reliable?
The price and inventory of IRFS3507TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS3507TRLPBF is usually 5 days.
3.What payment methods are accepted for IRFS3507TRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS3507TRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFS3507TRLPBF?
IRFS3507TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFS3507TRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFS3507TRLPBF?
For technical support, including IRFS3507TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS3507TRLPBF requirements.
6.How does Aetrix verify that IRFS3507TRLPBF is sourced from the original manufacturer or authorized distributors?
All IRFS3507TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS3507TRLPBF meets industry standards.
7.What is the process for return or replacement of IRFS3507TRLPBF?
All IRFS3507TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS3507TRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFS3507TRLPBF part is unused and in its original packaging.
Return procedure for IRFS3507TRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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