Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS3607PBF

Name: IRFS3607PBF
Brand: Infineon Technologies
SKU: IRFS3607PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFS3607PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS3607PBF.pdf

Description:: MOSFET N-CH 75V 80A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,016

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFS3607PBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in TO-262 (I²PAK) package, rated for 75 V V_DS, 80 A continuous drain current at T_C = 25°C, and 7.34 mΩ typical R_DS(on) at V_GS = 10 V. It delivers high-efficiency synchronous rectification in SMPS and supports hard-switched, high-frequency power conversion up to 1 MHz with robust avalanche capability (310 mJ single-pulse E_AS).

For engineers reviewing the IRFS3607PBF datasheet, IRFS3607PBF pinout, IRFS3607PBF application, or IRFS3607PBF equivalent, this page provides verified thermal resistance (R_θJC = 1.045°C/W), gate charge (Q_g = 56 nC typ.), body diode recovery (t_rr = 33–50 ns), SOA-limited switching performance, and TO-262 mechanical mounting guidance.

Technical Context

This MOSFET employs a planar silicon process optimized for low conduction loss and fast switching in high-current DC-DC and AC-DC topologies. Its enhanced body diode dV/dt (27 V/ns) and dI/dt (1920 A/μs) capability enable reliable operation in synchronous rectifier and unclamped inductive switching circuits without external snubbers.

The device features fully characterized C_iss (3070 pF), C_oss (280 pF), and C_rss (130 pF) with energy-related effective output capacitance (C_{oss eff.(ER)} = 380 pF), supporting accurate loss modeling in resonant and ZVS designs. Avalanche SOA is thermally limited and validated per JEDEC JESD24-10.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage before avalanche onset; defines usable input range in 48 V and 60 V bus systems.
R_DS(on) typ.	7.34 mΩ @ V_GS = 10 V, T_J = 25°C - Enables ≤6 W conduction loss at 80 A, critical for high-current synchronous rectifiers.
Q_g	56 nC typ. - Determines gate drive power and switching speed; compatible with standard 1–2 A peak gate drivers.
t_r/t_f	110 ns / 96 ns - Supports >500 kHz hard-switching with minimal overlap loss when paired with appropriate gate resistance.
E_AS	310 mJ single-pulse - Allows safe unclamped inductive switching in UPS and motor drives without external clamping.
t_rr	33–50 ns @ I_F = 46 A, T_J = 25–125°C - Ensures low reverse recovery loss in synchronous buck converters.
R_θJC	1.045°C/W - Enables direct heatsink mounting with predictable junction temperature rise under 80 A DC load.

Pinout & Package

IRFS3607PBF uses the TO-262 (I²PAK) package: insulated plastic case with three leads, designed for through-hole mounting on PCBs with heatsink interface via tab. The metal tab is electrically connected to the Drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying high-side node	Electrically tied to metal tab; requires isolation washer or insulating pad when mounted to grounded heatsink.
Source	Reference node for gate control and current return path	Low-inductance connection essential for stable gate drive and minimizing shoot-through risk in half-bridge layouts.
Gate	Control electrode for channel formation	High-impedance input requiring <100 nA leakage handling; sensitive to ESD and ringing-needs local RC snubber if long traces used.

Key Features

Feature	Design Value
Enhanced body diode dV/dt ruggedness	27 V/ns - Prevents parasitic turn-on during fast voltage transients in synchronous rectifier mode.
Thermally limited avalanche SOA	310 mJ single-pulse E_AS - Eliminates need for external avalanche clamps in UPS and PFC stages.
Low Crss/Ciss ratio	130 pF / 3070 pF = 4.2% - Reduces Miller effect, enabling stable high-speed switching with moderate gate drive strength.
Characterized Coss eff. (ER)	380 pF - Accurately models stored energy in resonant LLC and ZVS converters for precise dead-time optimization.
Improved dynamic dv/dt immunity	Validated per JEDEC JESD24-10 - Ensures robustness against cross-conduction in bridge configurations under noisy bus conditions.

Applications

Server VRM Synchronous Rectifier

Industrial UPS Inverter Stage

Use Scenario: High-current 12 V → 1 V DC-DC conversion in dual-phase server VRMs operating at 500–800 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch replacing Schottky diodes to reduce conduction loss and improve efficiency above 30 A.

Use Value: 7.34 mΩ R_DS(on) cuts rectifier loss by >65% vs. 40 V Schottky, directly enabling >94% full-load efficiency at 150 A output.

Use Scenario: 48 V DC bus inversion to 230 V AC in line-interactive UPS systems with bidirectional power flow.

IC Role / Device Role / Timing Role: High-current half-bridge switch in H-bridge inverter stage, handling 80 A peak load currents.

Use Value: 310 mJ E_AS rating allows safe operation during short-circuit events without desaturation protection circuitry.

Telecom DC-DC Brick

Motor Drive Half-Bridge

Use Scenario: 54 V input, 12 V output isolated DC-DC brick for 5G base station power supplies running at 300–600 kHz.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in center-tapped forward topology with active clamp reset.

Use Value: 33 ns t_rr minimizes reverse recovery loss during zero-voltage switching transitions, reducing thermal stress on secondary winding.

Use Scenario: 72 V battery-fed BLDC motor drive for industrial automation, operating in 6-step commutation at 20 kHz PWM.

IC Role / Device Role / Timing Role: High-side and low-side switch in three-phase inverter leg, switching 46 A RMS phase current.

Use Value: 1.045°C/W R_θJC enables direct heatsink mounting with ≤85°C junction rise at full load, avoiding forced-air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF70	70 V V_DS, 80 A, R_DS(on) = 9.5 mΩ, Q_g = 120 nC, TO-220	Higher gate charge increases driver loss; lower V_DS limits use in 60 V transient-prone systems.	Select only if cost sensitivity outweighs switching loss and 75 V margin requirements.
IXTH80N10L2	100 V V_DS, 80 A, R_DS(on) = 10.5 mΩ, Q_g = 65 nC, TO-247	Higher voltage rating adds margin but increases die size and cost; TO-247 requires larger PCB footprint.	Prefer for 100 V bus systems or where higher avalanche margin justifies thermal/mechanical trade-offs.

Compared with STP80NF70 and IXTH80N10L2, IRFS3607PBF offers optimal balance of 75 V rating, lowest R_DS(on), and moderate Q_g in TO-262-making it ideal for space-constrained, high-efficiency 48–60 V industrial SMPS where thermal density and switching loss are co-critical.

Availability

IRFS3607PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and high-speed power switching circuits requiring stable component supply across extended production lifecycles.

Supply support for IRFS3607PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

IRFS3607PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-current, high-frequency power conversion in telecom, server, and industrial UPS applications where conduction loss, switching speed, and avalanche reliability are jointly critical.

FAQ

Is IRFS3607PBF lead-free and RoHS compliant?

Yes, the "PBF" suffix confirms lead-free termination and full compliance with EU RoHS Directive 2011/65/EU and China RoHS. The device uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 for unlimited floor life at ≤30°C/60% RH.

What is the maximum recommended gate drive voltage for IRFS3607PBF?

The absolute maximum V_GS is ±20 V, but Infineon specifies 10 V as the nominal gate drive for full R_DS(on) specification. Driving above 15 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and risk of overvoltage failure during transients.

Can IRFS3607PBF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (0.096 V/°C) ensures inherent current sharing. For stable paralleling, match gate drive loop inductance, use individual gate resistors (≤10 Ω), and ensure symmetrical PCB layout and heatsinking to maintain ΔT_J < 5°C between devices.

Does IRFS3607PBF require a gate resistor for EMI control?

Yes-a series gate resistor (typically 2.2–10 Ω) is required to dampen ringing caused by gate-drain capacitance (C_rss) and PCB inductance. Without it, V_GS oscillation can cause partial turn-on, increased switching loss, and electromagnetic emissions exceeding CISPR 22 Class B limits.

IRFS3607PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 46A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3070 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS3607PBF FAQ

1.How can I place an order for IRFS3607PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS3607PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS3607PBF reliable?

The price and inventory of IRFS3607PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS3607PBF is usually 5 days.

3.What payment methods are accepted for IRFS3607PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS3607PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS3607PBF?

IRFS3607PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS3607PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS3607PBF?

For technical support, including IRFS3607PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS3607PBF requirements.

6.How does Aetrix verify that IRFS3607PBF is sourced from the original manufacturer or authorized distributors?

All IRFS3607PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS3607PBF meets industry standards.

7.What is the process for return or replacement of IRFS3607PBF?

All IRFS3607PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS3607PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS3607PBF part is unused and in its original packaging.

Return procedure for IRFS3607PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…