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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS3806PBF

Name: IRFS3806PBF
Brand: Infineon Technologies
SKU: IRFS3806PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS3806PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS3806PBF.pdf

Description:: MOSFET N-CH 60V 43A D2PAK

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Product details

Overview

IRFS3806PBF from Infineon Technologies is a 60 V, 43 A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency hard-switched SMPS and synchronous rectification with 12.6 mΩ typical R_DS(on), 22 nC total gate charge, and enhanced body diode dV/dt (1580 A/µs) and avalanche ruggedness. It operates reliably up to 175 °C junction temperature.

For engineers reviewing the IRFS3806PBF datasheet, IRFS3806PBF pinout, IRFS3806PBF application, or IRFS3806PBF equivalent, key selection criteria include its 60 V V_DSS, low 12.6 mΩ on-resistance at 10 V gate drive, fast 40 ns rise time, robust 73 mJ single-pulse avalanche energy, and TO-220AB thermal performance with R_θJC = 2.12 °C/W.

Technical Context

This MOSFET employs planar silicon process with optimized cell geometry to deliver high dI/dt capability (1580 A/µs) and improved dynamic dv/dt ruggedness-critical for ZVS/ZCS topologies and unclamped inductive switching. Its fully characterized SOA includes thermally limited avalanche ratings and linear derating above 25 °C case temperature.

The device integrates an intrinsic body diode with 22 ns reverse recovery time (T_J = 25 °C), 17 nC Q_rr, and 1.3 V forward voltage, enabling efficient synchronous rectification without external Schottky replacement in 48 V input SMPS and UPS systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; supports 48 V bus designs with 20 % margin.
R_DS(on) typ.	12.6 mΩ @ V_GS = 10 V, T_J = 25 °C - Enables <1.3 W conduction loss at 32 A DC current.
I_D cont.	43 A @ T_C = 25 °C - Sustains full-load current in high-density power stages with adequate heatsinking.
Q_g	22 nC max - Determines gate driver power requirement; compatible with standard 1 A peak drivers.
E_AS	73 mJ - Single-pulse avalanche energy limit; allows safe operation under inductive turn-off stress without snubber.
t_r/t_f	40 ns / 47 ns - Fast switching transitions reduce overlap losses in 100–500 kHz SMPS designs.
V_SD	1.3 V max @ I_S = 25 A - Low body diode forward drop minimizes reverse conduction loss during dead-time.
R_θJC	2.12 °C/W - Junction-to-case thermal resistance enables 32 W dissipation at 68 °C case-to-ambient delta.

Pinout & Package

IRFS3806PBF uses the TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, and 1.1 N·m maximum screw torque for mechanical reliability.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives 10 V logic-level gate drive; 0.79 Ω internal gate resistance limits ringing and aids EMI control.
Drain (D)	High-side power terminal	Connected to heatsink via isolated tab; carries main load current and absorbs avalanche energy.
Source (S)	Power return and reference node	Serves as common return for gate drive and load current; defines local ground for driver IC placement.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	73 mJ single-pulse E_AS with validated thermal failure model-enables reliable unclamped inductive switching without snubbers.
Fast, soft body diode	22 ns t_rr, 17 nC Q_rr, and 1580 A/µs dI/dt rating-reduces voltage spikes and EMI in synchronous rectifier applications.
Low gate charge	22 nC Q_g and 6.3 nC Q_gd-minimizes switching losses and driver power demand in high-frequency converters.
Thermally robust package	TO-220AB with R_θJC = 2.12 °C/W and 175 °C max T_J-supports continuous operation in industrial ambient up to 85 °C with passive cooling.
Lead-free construction	"PBF" suffix denotes RoHS-compliant lead-free plating and Pb-free die attach-meets IPC-J-STD-020 moisture sensitivity level 1.

Applications

Server VRM Output Stage

Telecom 48 V DC-DC Converter

Use Scenario: High-current, multiphase buck converter delivering 100+ A at 1.2 V to CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with 100 ns dead-time.

Use Value: 12.6 mΩ R_DS(on) reduces conduction loss by >30 % vs. legacy 20 mΩ devices; fast 40 ns t_r enables tight dead-time control.

Use Scenario: Isolated forward or LLC resonant converter in 48 V telecom rectifier supplying 12 V/20 A to base station subsystems.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 60 V transient surges and 25 A peak current.

Use Value: 60 V V_DSS and 73 mJ E_AS ensure survival during line transients and no-load overvoltage events per GR-1089.

Industrial UPS Inverter Bridge

EV Onboard Charger PFC Stage

Use Scenario: 3 kVA double-conversion UPS inverter using six-pack TO-220 MOSFETs in three-phase IGBT-replacement topology.

IC Role / Device Role / Timing Role: Hard-switched 60 Hz–20 kHz bridge leg switch with bidirectional current flow via body diode.

Use Value: 1.3 V V_SD and 22 ns t_rr minimize conduction and recovery losses during 180° commutation; 170 A I_SM handles surge currents.

Use Scenario: Boost PFC front-end in 6.6 kW OBC converting 240 V AC to 400 V DC, operating at 65–100 kHz.

IC Role / Device Role / Timing Role: High-efficiency boost switch requiring low Q_g and high dV/dt immunity.

Use Value: 22 nC Q_g and 67 pF C_rss reduce driver losses and improve light-load efficiency; 15.8 mΩ max R_DS(on) ensures thermal margin at 105 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	60 V, 60 A, 14 mΩ R_DS(on), 45 nC Q_g, TO-220	Higher gate charge increases driver loss; higher I_D rating suits higher-current but lower-frequency designs.	Select when higher continuous current (60 A) is required and switching frequency ≤100 kHz.
IXTP30N06T	60 V, 30 A, 18 mΩ R_DS(on), 17 nC Q_g, TO-220	Lower Q_g improves high-frequency efficiency but reduced current rating and avalanche energy (35 mJ).	Select for ultra-high-frequency (>1 MHz) resonant converters where gate loss dominates and peak current ≤30 A.

Compared with STP60NF06 and IXTP30N06T, IRFS3806PBF delivers optimal balance of low R_DS(on), moderate Q_g, and high E_AS, making it preferred for 200–500 kHz hard-switched SMPS where both conduction and avalanche robustness matter.

Availability

IRFS3806PBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial UPS inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFS3806PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in switched-mode supplies, motor drives, and uninterruptible power systems.

FAQ

Is IRFS3806PBF suitable for surface-mount assembly?

No. The TO-220AB package is explicitly not recommended for surface-mount applications per Infineon's datasheet note. It requires through-hole mounting with mechanical screw attachment to a heatsink for thermal and mechanical integrity.

What is the maximum allowable gate-to-source voltage?

The absolute maximum V_GS is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. Gate drive circuits must clamp to this limit, especially during fast switching or negative voltage undershoots.

Does IRFS3806PBF have avalanche-rated operation?

Yes. It is fully characterized for single-pulse avalanche with E_AS = 73 mJ at T_J = 25 °C and I_AS = 25 A. Repetitive avalanche is permitted only if junction temperature remains ≤175 °C and pulse conditions meet AN-1005 guidelines.

How does its body diode compare to discrete Schottky diodes?

Its body diode has 1.3 V V_SD and 22 ns t_rr, outperforming standard silicon diodes but higher forward drop than Schottky alternatives. It eliminates external diode count in synchronous rectifiers where 1.3 V loss is acceptable versus added cost and layout area.

IRFS3806PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 15.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1150 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS3806PBF FAQ

1.How can I place an order for IRFS3806PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS3806PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS3806PBF reliable?

The price and inventory of IRFS3806PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS3806PBF is usually 5 days.

3.What payment methods are accepted for IRFS3806PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS3806PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS3806PBF?

IRFS3806PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS3806PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS3806PBF?

For technical support, including IRFS3806PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS3806PBF requirements.

6.How does Aetrix verify that IRFS3806PBF is sourced from the original manufacturer or authorized distributors?

All IRFS3806PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS3806PBF meets industry standards.

7.What is the process for return or replacement of IRFS3806PBF?

All IRFS3806PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS3806PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS3806PBF part is unused and in its original packaging.

Return procedure for IRFS3806PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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