Infineon Technologies IRFS38N20DPBF

Overview

IRFS38N20DPBF from Infineon is a 200 V, 43 A (T_C = 25°C), D2-Pak packaged N-channel enhancement-mode HEXFET® Power MOSFET with R_DS(on) ≤ 54 mΩ at V_GS = 10 V and rated for continuous operation up to T_J = 175 °C. It delivers robust avalanche energy handling (E_AS = 460 mJ), low gate charge (Q_g = 60–91 nC), and fast switching (t_r = 95 ns, t_f = 47 ns), making it suitable for high-frequency DC-DC converters and plasma display panel power stages.

For engineers reviewing the IRFS38N20DPBF datasheet, IRFS38N20DPBF pinout, IRFS38N20DPBF application, or IRFS38N20DPBF equivalent, key selection criteria include its 200 V V_BR(DSS), 54 mΩ R_DS(on), 175 °C T_J(max), 460 mJ single-pulse avalanche energy, and D2-Pak thermal performance (R_θJC = 0.47 °C/W).

Technical Context

This MOSFET employs planar silicon process technology optimized for high-voltage switching in hard-switched topologies. Its low Q_gd/Q_gs ratio (28/17 typical) supports reduced Miller-induced turn-off delay and improved dv/dt immunity, while fully characterized C_oss(eff) = 380 pF enables accurate snubberless design in resonant and quasi-resonant converters.

The device integrates a fast, low-loss body diode with t_rr = 160–240 ns and Q_rr = 1.3–2.0 µC, enabling efficient synchronous rectification and freewheeling in buck and half-bridge configurations without external diode supplementation.

Key Specifications

Pinout & Package

The IRFS38N20DPBF uses the D2-Pak (TO-263AB) surface-mount package with exposed drain pad for thermal and electrical connection. The package features three leads: Gate (G), Drain (D), and Source (S), with Drain electrically tied to the large copper tab on the bottom side.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP20NM20 and IXTH30N20P, IRFS38N20DPBF offers superior balance of low R_DS(on), high avalanche ruggedness, and compact D2-Pak thermal performance-making it optimal for space-constrained, high-reliability 200 V switching where both efficiency and fault tolerance are critical.

Availability

IRFS38N20DPBF is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, plasma display panel sustain drivers, and industrial motor drive inverters requiring stable component supply and long-term production continuity.

Supply support for IRFS38N20DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in industrial, consumer, and automotive systems-designed specifically for demanding hard-switched and resonant topologies requiring ruggedness, low loss, and thermal stability.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFS38N20DPBF supports 30 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 43 A rating at 25°C, governed by the 2.0 W/°C linear derating factor and R_θJC = 0.47 °C/W.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is required to control switching speed and suppress ringing. With Q_g = 60–91 nC and typical gate drive voltage of 10–15 V, a 5–10 Ω resistor limits peak gate current to <2 A and dV/dt to safe levels, preventing false turn-on due to Miller coupling in bridge configurations.

Can IRFS38N20DPBF be used in synchronous rectification?

No-it is an N-channel MOSFET intended for high-side or low-side switching, not synchronous rectification. Its body diode has t_rr = 160–240 ns and Q_rr = 1.3–2.0 µC, which is too slow and lossy for efficient synchronous rectification; dedicated low-Q_rr, logic-level MOSFETs are recommended instead.

Is the D2-Pak package suitable for reflow soldering?

Yes-the D2-Pak (TO-263AB) package is qualified for lead-free reflow soldering per J-STD-020. Peak temperature must not exceed 260°C for 10 seconds, and thermal profile must accommodate the large copper drain pad's heat mass to ensure void-free solder joints and mechanical integrity.