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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS38N20DTRRP

Name: IRFS38N20DTRRP
Brand: Infineon Technologies
SKU: IRFS38N20DTRRP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS38N20DTRRP

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS38N20DTRRP.pdf

Description:: MOSFET N-CH 200V 43A D2PAK

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Product details

Overview

IRFS38N20DTRRP from Infineon is a 200 V, 43 A (T_C = 25°C), D2-Pak packaged N-channel enhancement-mode HEXFET® Power MOSFET with R_DS(on) ≤ 54 mΩ at V_GS = 10 V, 175°C maximum junction temperature, and fully characterized avalanche capability (E_AS = 460 mJ). It is engineered for high-frequency DC-DC converters and plasma display panel (PDP) power stages where low switching loss and robust unclamped inductive switching are critical.

For engineers reviewing the IRFS38N20DTRRP datasheet, IRFS38N20DTRRP pinout, IRFS38N20DTRRP application, or IRFS38N20DTRRP equivalent, key selection criteria include its 260 V repetitive avalanche rating, 60 nC total gate charge, 380 pF effective output capacitance (C_oss,eff), 9.5 V/ns peak diode recovery dv/dt, and thermal resistance R_θJC = 0.47°C/W - all validated under industrial operating conditions.

Technical Context

This MOSFET employs a planar silicon process optimized for fast switching and rugged avalanche performance. Its gate threshold voltage (3.0–5.0 V) ensures reliable turn-on with standard 10 V gate drivers, while the 17 S forward transconductance supports stable current regulation across temperature.

The device integrates a low-loss body diode with t_rr = 160–240 ns and Q_rr = 1.3–2.0 µC, enabling efficient synchronous rectification and hard-switched flyback topologies. Its C_iss/C_oss/C_rss values (2900/450/73 pF at V_DS = 25 V) are fully characterized to support accurate snubber and gate drive design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Maximum blocking voltage for primary-side switching in 12–48 V input DC-DC converters up to 200 V bus rails.
R_DS(on) max	54 mΩ @ V_GS = 10 V, I_D = 26 A - Enables <1.4 W conduction loss at 30 A continuous drain current with minimal heatsinking.
Q_g total	60–91 nC - Determines gate driver current requirement (~1.2 A avg. for 100 ns turn-on with 5 V swing); impacts switching loss trade-off.
E_AS	460 mJ - Supports single-pulse unclamped inductive energy handling without failure in PDP sustain circuits or motor gate drivers.
t_r/t_f	95 ns / 47 ns - Enables >500 kHz operation in resonant LLC and phase-shifted full-bridge converters with controlled EMI.
R_θJC	0.47°C/W - Allows 300 W power dissipation with ≤141°C ΔT from junction to case, supporting compact heatsink integration in D2-Pak footprint.
V_SD	1.5 V @ I_S = 26 A, T_J = 25°C - Defines forward drop of integrated body diode during freewheeling; impacts efficiency in non-synchronous buck stages.

Pinout & Package

IRFS38N20DTRRP uses the surface-mount D2-Pak (TO-263) package with isolated tab, optimized for automated assembly and high-current PCB routing. Thermal pad is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 10 V drive for full R_DS(on) specification; gate charge Q_g = 60–91 nC defines driver sizing.
D	Drain	Main high-side switching node; electrically tied to thermal pad; rated for 200 V DC and 260 V avalanche; connects to input bus or transformer primary.
S	Source	Power return path and reference for gate drive; ties to low-side switch source or ground plane; carries full load current and body diode reverse recovery charge.

Key Features

Feature	Design Value
Low Q_gd/Q_gs ratio	28/17 nC - Reduces Miller-induced shoot-through risk and improves hard-switching stability in half-bridge configurations.
Fully characterized C_oss,eff	380 pF - Enables precise calculation of turn-off energy (E_off ≈ ½ × C_oss,eff × V_DS²) for loss budgeting in ZVS/ZCS designs.
Lead-free construction	RoHS-compliant, Pb-free plating and die attach - Meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3) for reflow compatibility.
Avalanche-rated	260 V repetitive V_DS(AV), 460 mJ single-pulse E_AS - Eliminates need for external clamping in PDP sustain and UPS hold-up circuits.
High dv/dt immunity	9.5 V/ns peak diode recovery dv/dt - Prevents false turn-on during fast inductive flyback transitions in high-noise industrial environments.

Applications

High-Frequency DC-DC Converters

Plasma Display Panel (PDP) Sustain Circuits

Use Scenario: 300–1000 kHz isolated DC-DC power supplies for telecom and server VRMs.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active-clamp forward or LLC resonant converters.

Use Value: Low Q_g and C_oss,eff reduce switching losses by >25% vs. legacy 200 V MOSFETs, enabling >95% efficiency at 500 kHz.

Use Scenario: High-voltage sustain drivers generating 180–220 V AC waveforms across PDP electrode pairs.

IC Role / Device Role / Timing Role: Half-bridge leg switch handling repetitive 200 V, 20 A pulsed currents at 100–200 kHz.

Use Value: 260 V avalanche rating and 460 mJ E_AS tolerate transient overvoltage without snubbers, reducing BOM count and board area.

Motor Drive Half-Bridge Legs

Industrial UPS Hold-Up Stages

Use Scenario: 24–48 V BLDC motor inverters requiring robust short-circuit withstand.

IC Role / Device Role / Timing Role: Low-side or high-side switch in 3-phase inverter legs with integrated bootstrap gate drive.

Use Value: 175°C T_Jmax and 30 A I_D @ T_C = 100°C enable continuous 15 A RMS operation in sealed enclosures without forced air.

Use Scenario: 48 V input, 200 V output boost stage maintaining DC bus during AC line dropout.

IC Role / Device Role / Timing Role: Main switching element in interleaved boost converter delivering 1.5 kW sustained power.

Use Value: R_θJC = 0.47°C/W allows direct mounting to cold plate, achieving <85°C junction rise at full load - extending electrolytic capacitor life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP38NF20	R_DS(on) = 55 mΩ (typ), Q_g = 65 nC, no published C_oss,eff or E_AS data; TO-220 package only.	Lacks D2-Pak option and avalanche characterization; unsuitable for PDP or unclamped inductive loads.	Select when cost is prioritized over ruggedness and surface-mount assembly is not required.
IXTP38N20P	R_DS(on) = 52 mΩ (typ), Q_g = 72 nC, T_Jmax = 175°C, but only 200 V V_DS rating and no avalanche spec.	No 260 V avalanche margin; limited to clamped topologies; higher gate charge increases driver complexity.	Prefer for lower-conduction-loss needs in soft-switched applications where avalanche stress is absent.

Compared with STP38NF20 and IXTP38N20P, IRFS38N20DTRRP uniquely combines D2-Pak manufacturability, 260 V avalanche rating, and published C_oss,eff - making it the only choice for production-grade PDP sustain and high-reliability industrial DC-DC where unclamped energy absorption is mandatory.

Availability

IRFS38N20DTRRP is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, plasma display panel sustain circuits, and industrial UPS hold-up stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for IRFS38N20DTRRP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 9001.

This part belongs to Infineon's HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-reliability power conversion in industrial, telecom, and consumer display systems demanding rugged avalanche performance and surface-mount scalability.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFS38N20DTRRP supports 30 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2-Pak package and ensures safe operation within the 175°C junction temperature limit under sustained load.

Is the D2-Pak thermal pad electrically isolated or connected to a terminal?

The D2-Pak thermal pad on IRFS38N20DTRRP is electrically connected to the drain terminal, not isolated. This requires careful PCB layout to avoid unintended shorts; the drain net must be routed with adequate clearance and copper pour tied directly to the pad for optimal thermal transfer and electrical integrity.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No - IRFS38N20DTRRP has a gate threshold voltage range of 3.0–5.0 V and is fully enhanced at V_GS = 0 V. A gate drive of 0 V to 10 V is sufficient; applying negative voltage is unnecessary and may exceed the ±30 V V_GS absolute maximum rating if referenced improperly.

How does the 380 pF effective output capacitance (C_oss,eff) differ from the 450 pF C_oss value at V_DS = 25 V?

C_oss,eff = 380 pF is a fixed-value capacitance calibrated to replicate the actual energy stored in C_oss during V_DS ramp from 0 to 160 V - critical for accurate E_off calculation. In contrast, the 450 pF C_oss at V_DS = 25 V is a small-signal measurement point and underestimates real-world turn-off energy in high-voltage switching.

IRFS38N20DTRRP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 54mOhm @ 26A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 91 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS38N20DTRRP FAQ

1.How can I place an order for IRFS38N20DTRRP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS38N20DTRRP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS38N20DTRRP reliable?

The price and inventory of IRFS38N20DTRRP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS38N20DTRRP is usually 5 days.

3.What payment methods are accepted for IRFS38N20DTRRP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS38N20DTRRP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS38N20DTRRP?

IRFS38N20DTRRP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS38N20DTRRP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS38N20DTRRP?

For technical support, including IRFS38N20DTRRP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS38N20DTRRP requirements.

6.How does Aetrix verify that IRFS38N20DTRRP is sourced from the original manufacturer or authorized distributors?

All IRFS38N20DTRRP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS38N20DTRRP meets industry standards.

7.What is the process for return or replacement of IRFS38N20DTRRP?

All IRFS38N20DTRRP units undergo pre-shipment inspection (PSI). If there is an issue with IRFS38N20DTRRP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS38N20DTRRP part is unused and in its original packaging.

Return procedure for IRFS38N20DTRRP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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