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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS4010PBF

Name: IRFS4010PBF
Brand: Infineon Technologies
SKU: IRFS4010PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS4010PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS4010PBF.pdf

Description:: MOSFET N-CH 100V 180A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFS4010PBF from Infineon Technologies (formerly International Rectifier) is a 100V, 180A N-channel enhancement-mode HEXFET Power MOSFET in D2PAK (TO-262) package, optimized for high-current synchronous rectification and hard-switched SMPS topologies. It features 3.9 mΩ typical R_DS(on), 143 nC total gate charge, and enhanced body diode dV/dt and dI/dt capability for robust unclamped inductive switching.

For engineers reviewing the IRFS4010PBF datasheet, IRFS4010PBF pinout, IRFS4010PBF application, or IRFS4010PBF equivalent, key selection criteria include its 720 W maximum power dissipation at T_C = 25°C, 0.40 °C/W junction-to-case thermal resistance, 106 A avalanche current rating, and validated performance in UPS and high-frequency DC-DC converters requiring low conduction loss and fast recovery.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell layout to achieve low R_DS(on) while maintaining rugged avalanche performance. Its dynamic parameters-including 50 nC Miller charge, 86 ns rise time, and 77 ns fall time-are characterized at V_DD = 65 V, I_D = 106 A, and R_G = 2.7 Ω, supporting operation up to several hundred kHz in resonant and phase-shifted topologies.

The integrated body diode exhibits 72 ns reverse recovery time and 210 nC reverse recovery charge at T_J = 25°C, with V_SD = 1.3 V at I_S = 106 A, enabling efficient bidirectional current handling in synchronous buck and LLC configurations without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum drain-source blocking voltage; supports 48 V and 60 V bus systems with 20% margin.
R_DS(on) typ.	3.9 mΩ - Enables ≤0.7 W conduction loss at 135 A DC, critical for high-efficiency server VRMs.
I_D @ T_C = 25°C	180 A - Continuous drain current rating under ideal heatsink conditions; defines PCB copper area requirements.
Q_g max.	215 nC - Gate drive energy demand; determines gate driver peak current (≥8 A) and loop inductance sensitivity.
E_AS	318 mJ - Single-pulse avalanche energy; allows safe operation during transient overvoltage events in industrial motor drives.
R_θJC	0.40 °C/W - Junction-to-case thermal resistance; enables direct mounting to cold plates for >300 W thermal management.
trr	72 ns - Body diode reverse recovery time at T_J = 25°C; limits switching frequency in synchronous rectifiers.

Pinout & Package

IRFS4010PBF uses the D2PAK (TO-262) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard G-D-S order on the leadframe.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives 10 V gate drive to fully enhance channel; threshold voltage 2.0–4.0 V ensures TTL/CMOS compatibility.
Drain (D)	High-side power output	Connected to PCB thermal pad; carries full load current and must be routed with ≥3 oz copper for 180 A DC.
Source (S)	Reference node / return path	Provides low-impedance source return; ties to power ground plane and gate driver reference to minimize shoot-through risk.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	Rated for 318 mJ single-pulse E_AS and 106 A I_AR; eliminates need for external snubbers in UPS inverters.
Low C_{oss eff.} (TR)	1112 pF - Time-related effective output capacitance reduces turn-off losses in ZVS circuits above 200 kHz.
Improved body diode dI/dt capability	1319 A/μs - Supports fast current reversal in synchronous rectification without oscillation or latch-up.
Lead-free and RoHS-compliant	Pb-free plating and halogen-free molding compound; meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3).
Characterized SOA curves	Full Safe Operating Area defined up to 100 μs pulse width; enables reliable design of peak-current-limited protection schemes.

Applications

Server Voltage Regulator Modules

Uninterruptible Power Supply Inverters

Use Scenario: High-density 48 V–12 V step-down conversion delivering up to 300 A per phase in AI accelerator racks.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch operating at 300–500 kHz with forced-air cooling.

Use Value: 3.9 mΩ R_DS(on) reduces conduction loss by 35% versus 6.0 mΩ alternatives, directly improving system efficiency from 92% to 94.2% at 200 A.

Use Scenario: Bidirectional DC-AC inversion stage in 5–10 kVA online UPS systems with battery backup.

IC Role / Device Role / Timing Role: High-side switching element in full-bridge topology handling 106 A pulsed currents during line-to-battery transfer.

Use Value: 318 mJ E_AS and 106 A I_AR enable reliable operation during 10 ms grid dropout events without derating or parallel devices.

Industrial Motor Drive Half-Bridges

High-Frequency Induction Heating

Use Scenario: 3-phase inverter driving 7.5 kW permanent magnet motors in CNC spindles with field-oriented control.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid half-bridge, commutating at 16 kHz with 100% duty cycle capability.

Use Value: 0.40 °C/W R_θJC allows direct cold-plate mounting, sustaining 127 A continuous current at T_C = 100°C without thermal throttling.

Use Scenario: Resonant tank switching in 100–300 kHz induction heating generators for metal forging and brazing.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) main switch in series-resonant LLC topology with 65 V bus and 180 A peak current.

Use Value: 72 ns trr and 210 nC Q_rr minimize diode recovery losses, reducing total switching loss by 22% compared to standard trench MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW90NF10	100 V, 90 A, R_DS(on) = 10.5 mΩ, TO-247 package, higher R_DS(on) and lower I_D.	Requires paralleling for 180 A loads; larger footprint and higher thermal resistance (R_θJC = 0.55 °C/W).	Select when legacy TO-247 socket compatibility is required and board space permits dual devices.
IXFH180N10L2	100 V, 180 A, R_DS(on) = 3.2 mΩ, TO-247 package, lower R_DS(on) but no avalanche rating published.	Lacks documented E_AS specification; unsuitable for unclamped inductive loads without external clamping.	Select only in ZVS or soft-switched designs where avalanche stress is absent and lowest possible conduction loss is prioritized.

Compared with STW90NF10 and IXFH180N10L2, IRFS4010PBF uniquely balances ultra-low R_DS(on), industry-leading avalanche energy, and D2PAK thermal performance-making it optimal for space-constrained, high-reliability SMPS where both efficiency and fault tolerance are non-negotiable.

Availability

IRFS4010PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and high-speed power switching in industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRFS4010PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

IRFS4010PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-current, high-ruggedness switching in telecom rectifiers, server VRMs, and industrial UPS systems demanding low R_DS(on) and guaranteed avalanche performance.

FAQ

What is the maximum recommended gate voltage for IRFS4010PBF?

The absolute maximum gate-to-source voltage (V_GS) is ±20 V. Operation above +20 V risks oxide breakdown, while sustained negative gate voltage below –20 V may cause gate damage. For reliable enhancement, apply 10 V to achieve full R_DS(on) spec; 12–15 V is common in high-speed drivers to reduce switching time, provided gate ringing is controlled.

Can IRFS4010PBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (0.10 %/°C) enables inherent current sharing. Parallel operation requires matched gate drive impedance (<5% variation), symmetrical PCB layout, and shared thermal interface. Derate total current by 15% for two devices and 25% for three or more to account for thermal coupling and parameter spread.

Does IRFS4010PBF require a gate resistor for stability?

A gate resistor (R_G) is mandatory to dampen gate oscillation and limit peak gate current. With 215 nC Q_g and typical driver peak current of 2–4 A, a 5–10 Ω surface-mount resistor placed adjacent to the gate pin is recommended. Values <3 Ω increase risk of overshoot; >22 Ω excessively slows switching and raises losses.

Is the body diode suitable for continuous freewheeling in synchronous rectifiers?

Yes-the body diode is fully characterized for continuous conduction mode (CCM) operation with IS = 180 A at T_C = 25°C and trr = 72 ns at 25°C. However, V_SD = 1.3 V at 106 A means conduction loss exceeds that of an external Schottky at light loads; best practice is to actively drive the MOSFET during freewheeling to minimize forward drop.

IRFS4010PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 106A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 215 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9575 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS4010PBF FAQ

1.How can I place an order for IRFS4010PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS4010PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS4010PBF reliable?

The price and inventory of IRFS4010PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4010PBF is usually 5 days.

3.What payment methods are accepted for IRFS4010PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4010PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS4010PBF?

IRFS4010PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS4010PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS4010PBF?

For technical support, including IRFS4010PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4010PBF requirements.

6.How does Aetrix verify that IRFS4010PBF is sourced from the original manufacturer or authorized distributors?

All IRFS4010PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4010PBF meets industry standards.

7.What is the process for return or replacement of IRFS4010PBF?

All IRFS4010PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4010PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS4010PBF part is unused and in its original packaging.

Return procedure for IRFS4010PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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