Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS4010TRRPBF

Name: IRFS4010TRRPBF
Brand: Infineon Technologies
SKU: IRFS4010TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFS4010TRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS4010TRRPBF.pdf

Description:: MOSFET N-CH 100V 180A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,352

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFS4010TRRPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 180A N-channel enhancement-mode HEXFET Power MOSFET in TO-262 (ISOTOP) package, optimized for high-current synchronous rectification and hard-switched SMPS topologies. It features 3.9 mΩ typ. R_DS(on), 143 nC total gate charge, and enhanced body diode dV/dt/dI/dt ruggedness for robust operation in UPS and telecom power systems.

For engineers reviewing the IRFS4010TRRPBF datasheet, IRFS4010TRRPBF pinout, IRFS4010TRRPBF application, or IRFS4010TRRPBF equivalent, key selection criteria include its 100V V_DSS, 180A continuous drain rating at T_C = 25°C, 0.40°C/W junction-to-case thermal resistance, and validated unclamped inductive switching capability up to 106A avalanche current.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted gate structure to achieve low R_DS(on) while maintaining high dV/dt immunity (>2.5 V/ns) and controlled reverse recovery (Q_rr = 210 nC at T_J = 25°C). Its SOA is characterized up to 100 μs pulse width with linear derating beyond 25°C case temperature.

The device integrates an intrinsic fast-recovery body diode with t_rr = 72 ns and I_RRM = 5.3 A, enabling reliable bidirectional conduction in LLC resonant converters and active clamp circuits without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; supports 65 V bus designs with 1.5× safety margin.
R_DS(on) typ.	3.9 mΩ - Enables <1.5 W conduction loss at 106 A DC, critical for high-efficiency 48 V input telecom PSUs.
I_D @ T_C = 25°C	180 A - Continuous current rating under heatsink-mounted conditions; defines minimum heatsink sizing baseline.
Q_g max.	215 nC - Gate drive energy requirement determines driver IC selection (e.g., IR2110, UCC27531) and switching loss budget.
R_θJC	0.40 °C/W - Junction-to-case thermal resistance enables direct mounting to cold plates; limits ΔT_J-C to 72°C at 180 W dissipation.
E_AS	318 mJ - Single-pulse avalanche energy rating validates robustness against inductive turn-off transients in motor drives.
t_rr	72 ns - Body diode reverse recovery time measured at T_J = 25°C, VR = 85 V, IF = 106 A; impacts snubber design in ZVS circuits.

Pinout & Package

IRFS4010TRRPBF uses the TO-262 (ISOTOP) package: a 3-pin single-ended surface-mount variant of TO-220 with isolated tab, rated for >2.5 kV isolation and optimized for PCB thermal relief via large copper pour under the drain pad.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives 10 V threshold signal; requires 143 nC total charge to fully enhance; internal R_G = 2.0 Ω limits ringing.
Drain (D)	High-side power terminal	Connected to main power rail; electrically tied to metal tab; must be isolated from heatsink unless referenced to same potential.
Source (S)	Return path & reference node	Serves as common return for gate drive and load current; low-inductance layout essential to minimize V_GS noise during dI/dt > 1319 A/μs.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	Rated for 318 mJ single-pulse E_AS and 300 mJ repetitive E_AR at T_J = 175°C - eliminates need for external clamping in flyback snubbers.
Optimized body diode dI/dt capability	Supports 1319 A/μs di/dt with I_SD ≤ 106 A - enables zero-voltage switching in phase-shifted full-bridge converters without shoot-through risk.
Low C_{oss eff.}(TR)	1112 pF effective output capacitance (time-related) - reduces turn-off loss in high-frequency (>300 kHz) hard-switched PFC stages.
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1); compatible with lead-free reflow profiles up to 260°C peak.
Thermally enhanced SOA	SOA curve validated for 100 μs pulses at 100 V, 180 A - supports short-circuit protection in industrial motor inverters with <10 μs response.

Applications

Telecom Rectifier Modules

Uninterruptible Power Supplies

Use Scenario: 48 V input, 12 V output synchronous buck converter delivering 2 kW continuous power in distributed power architecture.

IC Role / Device Role / Timing Role: High-side power switch operating at 250 kHz with 100 ns dead-time control; body diode conducts during low-side freewheeling interval.

Use Value: 3.9 mΩ R_DS(on) reduces conduction loss by 42% vs. legacy 6.5 mΩ devices, enabling >96.2% efficiency at full load per phase.

Use Scenario: Dual-phase interleaved boost PFC stage in 3 kVA online UPS handling generator-sourced distorted AC input.

IC Role / Device Role / Timing Role: Fast-switching boost switch with unclamped inductive turn-off; avalanche-rated for line surge events exceeding 1.2 kV.

Use Value: 318 mJ E_AS withstands 10× nominal line surges without degradation, eliminating need for TVS clamping on DC bus.

Industrial Motor Drives

Server VRMs

Use Scenario: 3-phase inverter stage driving 7.5 kW permanent magnet servo motor with field-oriented control.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid topology; body diode handles regenerative braking current.

Use Value: 72 ns t_rr and 5.3 A I_RRM limit reverse recovery overshoot to <8% V_DC, preventing false overvoltage trips during deceleration.

Use Scenario: 4-phase 40 A VRM supplying 0.8–1.2 V to AI accelerator ASICs with dynamic current slew rates >200 A/μs.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter; operates in continuous conduction mode with 100% duty cycle capability.

Use Value: 0.40°C/W R_θJC allows direct cold plate mounting, maintaining T_J < 105°C at 40 A per phase with 100 LFM airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW90NF10	R_DS(on) = 4.5 mΩ (typ), Q_g = 160 nC, TO-247 package, no avalanche rating published	Lacks specified E_AS; requires external avalanche protection in inductive loads	Select when gate drive energy is constrained and avalanche stress is absent (e.g., DC-DC only).
IXTH180N10L2	R_DS(on) = 3.6 mΩ (typ), Q_g = 240 nC, TO-247 package, E_AS = 420 mJ	Higher gate charge increases driver loss; larger package complicates layout in space-constrained SMPS	Select when maximum avalanche margin is required and board area permits TO-247 footprint.

Compared with STW90NF10 and IXTH180N10L2, IRFS4010TRRPBF delivers optimal balance of low R_DS(on), moderate Q_g, certified avalanche capability, and compact TO-262 thermal interface-making it preferred for cost-sensitive, high-power-density telecom and UPS designs where reliability under transient stress is non-negotiable.

Availability

IRFS4010TRRPBF is available at Aetrix Electronics and suitable for telecom rectifier modules, uninterruptible power supplies, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRFS4010TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in server, telecom, and industrial infrastructure applications demanding rugged unclamped switching behavior.

FAQ

What is the maximum continuous drain current for IRFS4010TRRPBF at 100°C case temperature?

The maximum continuous drain current is 127 A at T_C = 100°C, derated linearly from 180 A at 25°C using the specified 31 W/°C derating factor. This value assumes proper PCB copper area (1" square FR-4) and adequate forced airflow or cold plate contact.

Does IRFS4010TRRPBF require a gate resistor for safe operation?

Yes-a series gate resistor (typically 5–25 Ω) is required to dampen ringing caused by parasitic inductance and limit peak gate current during fast transitions. The internal gate resistance is 2.0 Ω, but external resistance ensures controlled 21 ns turn-on delay and 100 ns turn-off delay per datasheet test conditions.

Can IRFS4010TRRPBF be used in parallel configurations?

Yes, due to its positive R_DS(on) temperature coefficient (0.10 V/°C), which promotes current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual source resistors (0.01 Ω) for current sensing and balancing per phase in multi-phase VRMs.

Is the TO-262 package of IRFS4010TRRPBF electrically isolated?

Yes-the TO-262 (ISOTOP) package provides electrical isolation between the drain-connected metal tab and the leads, rated to >2.5 kV RMS per UL 60950-1. This enables direct mounting to grounded heatsinks without insulating pads in floating-ground topologies like three-phase inverters.

IRFS4010TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 106A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 215 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9575 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS4010TRRPBF FAQ

1.How can I place an order for IRFS4010TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS4010TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS4010TRRPBF reliable?

The price and inventory of IRFS4010TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4010TRRPBF is usually 5 days.

3.What payment methods are accepted for IRFS4010TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4010TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS4010TRRPBF?

IRFS4010TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS4010TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS4010TRRPBF?

For technical support, including IRFS4010TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4010TRRPBF requirements.

6.How does Aetrix verify that IRFS4010TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFS4010TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4010TRRPBF meets industry standards.

7.What is the process for return or replacement of IRFS4010TRRPBF?

All IRFS4010TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4010TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS4010TRRPBF part is unused and in its original packaging.

Return procedure for IRFS4010TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…