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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS4020PBF

Name: IRFS4020PBF
Brand: Infineon Technologies
SKU: IRFS4020PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS4020PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS4020PBF.pdf

Description:: MOSFET N-CH 200V 18A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:8,907

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Product details

Overview

IRFS4020PBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 52 A N-channel enhancement-mode MOSFET in D2PAK (TO-262) package, optimized for Class-D audio amplifier half-bridge output stages. It delivers 300 W per channel into 8 Ω, features 85 mΩ R_DS(on) at V_GS = 10 V, 18 nC total gate charge, and 175 °C maximum junction temperature.

For engineers reviewing the IRFS4020PBF datasheet, IRFS4020PBF pinout, IRFS4020PBF application, or IRFS4020PBF equivalent, key selection criteria include low Q_g/Q_sw for THD reduction, low Q_rr for EMI control, rugged repetitive avalanche capability, and thermal robustness in high-power audio switching.

Technical Context

This MOSFET employs advanced silicon processing to minimize R_DS(on) per die area while co-optimizing gate charge profile (Q_gs1 = 4.5 nC, Q_gd = 5.3 nC), body diode reverse recovery (Q_rr = 280–420 nC, t_rr = 82–120 ns), and internal gate resistance (R_G(int) = 3.2 Ω) specifically for Class-D switching fidelity.

Its unclamped inductive switching performance supports repetitive avalanche energy up to 100 mJ at T_J = 25 °C, with thermal design enabled by R_θJC = 1.43 °C/W and linear derating of 0.70 W/°C above 100 °C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Withstands rail voltages up to ±100 V in bridge-tied load (BTL) configurations without breakdown.
R_DS(on) @ 10 V	85 mΩ typ. - Enables <1.5 W conduction loss at 52 A DC, critical for thermal management in compact audio amplifiers.
Q_g	18 nC typ. - Reduces gate drive power and enables faster, lower-distortion switching transitions in >300 kHz PWM operation.
Q_rr	280–420 nC - Minimizes body-diode commutation spikes and associated EMI generation during dead-time switching.
T_J(max)	175 °C - Supports sustained high-power operation with margin above typical Class-D thermal limits (150 °C).
R_θJC	1.43 °C/W - Allows direct heatsink mounting with predictable junction-to-case thermal path for accurate thermal modeling.

Pinout & Package

IRFS4020PBF is housed in a surface-mount D2PAK (TO-262) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard S-D-G order on the lead frame.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal, connected to internal die backside	Electrically and thermally tied to exposed copper pad - must be soldered to PCB copper pour for thermal dissipation and low-inductance high-current return path.
Source (S)	Reference node for gate drive and current sensing	Serves as common return for load current and gate driver ground - layout must minimize inductance to prevent shoot-through during fast switching.
Gate (G)	Control input for MOSFET channel conduction	High-impedance input requiring controlled drive strength (R_G(int) = 3.2 Ω) to manage dV/dt and EMI without oscillation.

Key Features

Feature	Design Value
Optimized Q_g/Q_sw ratio	Q_sw = 6.7 nC (Q_gs2 + Q_gd) enables precise dead-time control and low THD in high-frequency PWM audio switching.
Low body-diode Q_rr	280–420 nC reduces voltage overshoot and ringing during freewheeling, directly lowering radiated EMI in unshielded enclosures.
Repetitive avalanche rated	Rated for 100 mJ single-pulse and repetitive avalanche up to 10 mJ at 1% duty cycle - eliminates need for external snubbers in inductive load transients.
175 °C T_J(max)	Provides 25 °C thermal headroom over standard 150 °C MOSFETs, enabling higher power density without derating in sealed audio chassis.

Applications

High-Fidelity Home Audio Amplifiers

Professional Stage Power Amplifiers

Use Scenario: 500–1000 W stereo or mono Class-D amplifier modules driving 4–8 Ω loudspeakers in consumer AV receivers and integrated amps.

IC Role / Device Role / Timing Role: Half-bridge high-side and low-side switching element handling full rail-to-rail PWM output with minimal conduction and switching loss.

Use Value: 85 mΩ R_DS(on) and 18 nC Q_g enable >92% efficiency at full power, reducing heatsink size and audible fan noise.

Use Scenario: Rack-mounted 2–4 kW touring-grade amplifiers operating continuously at high ambient temperatures (≥40 °C) in live sound environments.

IC Role / Device Role / Timing Role: Primary output stage switch in paralleled half-bridge configurations delivering high peak current (≥100 A) into reactive speaker loads.

Use Value: 175 °C T_J(max) and 1.43 °C/W R_θJC sustain reliable operation under sustained thermal stress without derating.

Automotive Subwoofer Amplifiers

Active Studio Monitor Power Stages

Use Scenario: Compact 300–600 W subwoofer amplifiers mounted in vehicle trunks with limited airflow and wide ambient temperature swings (−40 to +85 °C).

IC Role / Device Role / Timing Role: High-current output switch managing high crest-factor bass signals with rapid transient response and low distortion.

Use Value: Low Q_rr (280–420 nC) suppresses diode-induced intermodulation distortion during complex low-frequency waveforms.

Use Scenario: Bi-amplified near-field studio monitors requiring ultra-low THD (<0.01%) and wide dynamic range across 20 Hz–20 kHz.

IC Role / Device Role / Timing Role: Precision output switch in dual-feedback Class-D topology where gate timing accuracy directly impacts linearity and jitter rejection.

Use Value: Tight Q_g tolerance (18 ± 11 nC) and stable V_GS(th) (3.0–4.9 V) ensure consistent channel matching and minimal gain drift over temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power Class-D audio MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V rating, 48 A ID, R_DS(on) = 65 mΩ, Q_g = 52 nC - higher voltage but significantly higher gate charge.	Better suited for universal-input industrial SMPS than audio; excessive Q_g degrades THD in >200 kHz audio switching.	Select only if 600 V blocking is required; avoid for Class-D due to poor Q_g/R_DS(on) trade-off.
IXTH30N20P	200 V, 30 A, R_DS(on) = 70 mΩ, Q_g = 27 nC - lower current rating and higher Q_g than IRFS4020PBF.	Limited to ≤150 W/channel designs; insufficient avalanche energy (EAS = 42 mJ) for high-energy speaker transients.	Acceptable for mid-power audio where peak current <35 A; not recommended for 300 W+ BTL stages.

Compared with STW48N60M2 and IXTH30N20P, IRFS4020PBF uniquely balances 52 A current capability, 18 nC gate charge, and 100 mJ avalanche energy-making it the only option validated for sustained 300 W/channel Class-D operation with low-EMI, low-THD requirements.

Availability

IRFS4020PBF is available at Aetrix Electronics and suitable for high-fidelity home audio amplifiers, professional stage power amplifiers, and automotive subwoofer amplifiers requiring stable component supply and long-term production continuity.

Supply support for IRFS4020PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with emphasis on energy efficiency and reliability.

This device belongs to Infineon's "HEXFET® Digital Audio" product line, engineered specifically for high-efficiency, low-distortion switching in Class-D audio amplifier output stages-not general-purpose power switching.

FAQ

What is the maximum continuous drain current for IRFS4020PBF at 100°C case temperature?

The maximum continuous drain current is 18 A at T_C = 100 °C and V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from the 52 A rating at 25 °C, constrained by R_θJC = 1.43 °C/W and safe junction temperature limits.

Does IRFS4020PBF have an integrated body diode, and what are its key parameters?

Yes, it includes a monolithic source-drain p-n junction body diode. Key parameters include V_SD = 1.3 V max at I_S = 11 A, t_rr = 82–120 ns, and Q_rr = 280–420 nC at di/dt = 100 A/µs - all measured with V_GS = 0 V and optimized for low-loss freewheeling in Class-D topologies.

Can IRFS4020PBF be used in synchronous rectification applications?

No - it is not designed or characterized for synchronous rectification. Its body diode Q_rr and forward voltage are optimized for Class-D freewheeling, not low-V_F rectification. Gate threshold voltage (3.0–4.9 V) and lack of dedicated SR control logic make it unsuitable for SR controller interfacing.

What is the recommended gate resistor value for driving IRFS4020PBF in a 300 kHz Class-D amplifier?

A series gate resistor of 5–10 Ω is recommended to dampen ringing while maintaining switching speed. This accounts for R_G(int) = 3.2 Ω and typical gate driver output impedance, targeting ~12 ns rise time (tr) and ~6.3 ns fall time (tf) per datasheet values under 50 V V_DD conditions.

IRFS4020PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 105mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4.9V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS4020PBF FAQ

1.How can I place an order for IRFS4020PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS4020PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS4020PBF reliable?

The price and inventory of IRFS4020PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4020PBF is usually 5 days.

3.What payment methods are accepted for IRFS4020PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4020PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS4020PBF?

IRFS4020PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS4020PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS4020PBF?

For technical support, including IRFS4020PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4020PBF requirements.

6.How does Aetrix verify that IRFS4020PBF is sourced from the original manufacturer or authorized distributors?

All IRFS4020PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4020PBF meets industry standards.

7.What is the process for return or replacement of IRFS4020PBF?

All IRFS4020PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4020PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS4020PBF part is unused and in its original packaging.

Return procedure for IRFS4020PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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