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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS4020TRLPBF

Name: IRFS4020TRLPBF
Brand: Infineon Technologies
SKU: IRFS4020TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS4020TRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS4020TRLPBF.pdf

Description:: MOSFET N-CH 200V 18A D2PAK

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Product details

Overview

IRFS4020TRLPBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 52 A N-channel enhancement-mode MOSFET in D2PAK (TO-263) package, optimized for Class-D audio amplifier half-bridge output stages. It delivers 85 mΩ R_DS(on) at V_GS = 10 V, 18 nC total gate charge, and 175 °C maximum junction temperature - enabling high-efficiency, low-THD, low-EMI operation in high-power audio systems.

For engineers reviewing the IRFS4020TRLPBF datasheet, IRFS4020TRLPBF pinout, IRFS4020TRLPBF application, or IRFS4020TRLPBF equivalent, key selection criteria include its low Q_RR (280–420 nC), fast switching (t_r = 12 ns, t_f = 6.3 ns), body diode reverse recovery performance, and rugged repetitive avalanche capability up to 100 mJ per pulse.

Technical Context

This MOSFET employs advanced trench-gate silicon processing to minimize conduction and switching losses simultaneously. Its internal gate resistance (3.2 Ω) and optimized Q_g/Q_sw ratio reduce ringing and improve gate drive stability in high-frequency Class-D topologies operating above 300 kHz.

The device integrates a robust intrinsic body diode with 82–120 ns reverse recovery time and 280–420 nC Q_rr, specifically tuned to suppress cross-conduction losses and voltage spikes during dead-time transitions in bridge-tied load (BTL) configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports rail voltages up to ±90 V in BTL Class-D amplifiers without derating
R_DS(on) @ 10 V	85 mΩ typ. - enables ≤0.5 W conduction loss at 52 A DC channel current
Q_g	18 nC typ. - reduces gate drive power and allows use of lower-current gate drivers
Q_rr	280–420 nC - minimizes diode-induced THD and EMI during hard-switching transitions
T_J(max)	175 °C - supports sustained 300 W/channel operation into 8 Ω with thermal margin
E_AS	100 mJ single-pulse - provides fault tolerance against unclamped inductive switching events

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for enhanced thermal dissipation; 3-pin configuration (Drain, Source, Gate) with Drain connected to the large copper tab on the underside.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab/Exposed Pad)	Drain	Primary high-side current path; electrically and thermally coupled to PCB copper pour
Pin 2	Source	Reference node for gate drive; connects to low-side switch source or ground return
Pin 3	Gate	Control input; requires <3.2 Ω external series resistance to damp oscillation due to internal R_G(int)

Key Features

Feature	Design Value
Class-D–optimized R_DS(on)/Q_g trade-off	85 mΩ + 18 nC enables >95% efficiency at 300 W/channel with minimal heatsinking
Low Q_rr body diode	280–420 nC reduces diode recovery distortion and EMI in high-dV/dt switching
Repetitive avalanche rated	Rated for ≥1000 cycles at 100 mJ/pulse - eliminates need for external snubbers in protection-limited designs
High-temperature operation	175 °C T_J(max) allows full-rated current delivery under sustained thermal stress in sealed enclosures

Applications

High-Fidelity Home Audio Amplifier

Professional PA System Output Stage

Use Scenario: 2×300 W stereo Class-D amplifier driving 4–8 Ω loudspeakers in compact chassis with limited airflow.

IC Role / Device Role / Timing Role: High-side and low-side switching element in half-bridge output stage; switches at 350–500 kHz with 100 ns dead time.

Use Value: Low R_DS(on) and Q_rr maintain THD+N <0.05% at full power while reducing heatsink mass by 40% vs. legacy MOSFETs.

Use Scenario: 1 kW bridged mono amplifier for line-array subwoofers requiring high peak current and thermal resilience.

IC Role / Device Role / Timing Role: Output switch in paralleled dual half-bridge topology; handles 100 A pulsed source current with 52 A continuous rating.

Use Value: 175 °C T_J(max) and 100 mJ E_AS ensure reliable operation during bass transients and short-circuit events without shutdown.

Automotive Infotainment Head Unit

Active Studio Monitor Power Stage

Use Scenario: 4×75 W Class-D amplifier integrated into automotive head unit with 14 V nominal supply and wide-temp cabin environment.

IC Role / Device Role / Timing Role: Half-bridge switch operating from 12–16 V rails; duty cycle modulated via PWM input at 400 kHz.

Use Value: Low V_GS(th) (3.0–4.9 V) ensures clean turn-on with standard 5 V logic-level gate drivers; Q_sw = 6.7 nC limits shoot-through risk.

Use Scenario: Dual-channel 200 W/channel near-field monitor with digital signal processing and real-time thermal compensation.

IC Role / Device Role / Timing Role: Final output switch in feedback-controlled BTL stage; gate driven by isolated SiC driver with adaptive dead-time control.

Use Value: Tight R_DS(on) distribution (85–105 mΩ) and low ∆V_GS(th)/∆T_J (−13 mV/°C) enable precise channel matching and stable gain over temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current Class-D audio MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V, 48 A, R_DS(on) = 65 mΩ, Q_g = 45 nC, no specified Q_rr data	Better voltage margin but higher switching loss; unsuitable for >200 V rail designs requiring low Q_rr	Select only if system uses 300–400 V rails and prioritizes avalanche energy over THD
IXFH40N20X3	200 V, 40 A, R_DS(on) = 52 mΩ, Q_g = 22 nC, Q_rr = 190 nC, T_J(max) = 150 °C	Lower R_DS(on) but reduced thermal headroom and lower current rating; Q_rr not optimized for audio	Preferable for space-constrained PCBs where conduction loss dominates, but requires tighter thermal design

Compared with STW48N60M2 and IXFH40N20X3, IRFS4020TRLPBF uniquely balances low Q_rr, 175 °C operation, and proven Class-D audio characterization - making it the only option validated for THD-sensitive, high-power, thermally constrained audio output stages.

Availability

IRFS4020TRLPBF is available at Aetrix Electronics and suitable for high-fidelity home audio amplifiers, professional PA systems, and automotive infotainment head units requiring stable component supply and long-term production continuity.

Supply support for IRFS4020TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This MOSFET belongs to Infineon's "StrongIRFET" family, engineered specifically for high-efficiency, high-reliability switching in demanding audio, motor control, and SMPS applications where low Q_rr and thermal robustness are critical.

FAQ

What is the recommended gate resistor value for IRFS4020TRLPBF in a 400 kHz Class-D amplifier?

Based on its 3.2 Ω internal gate resistance and 18 nC total gate charge, a 5–10 Ω external series gate resistor is recommended to suppress ringing while maintaining ≤100 ns switching transitions. Lower values (<5 Ω) increase gate driver stress; higher values (>15 Ω) degrade dV/dt control and raise THD.

Does IRFS4020TRLPBF require a negative gate turn-off voltage in half-bridge configurations?

No - its gate threshold voltage (3.0–4.9 V) and low V_GS hysteresis allow reliable turn-off with 0 V gate drive. However, applying −5 V improves noise immunity in high-dV/dt environments and reduces Miller-induced false turn-on during high-side switching.

Can IRFS4020TRLPBF be paralleled for higher current output without current-sharing resistors?

Yes - its positive R_DS(on) temperature coefficient (R_DS(on) increases with temperature) enables inherent current balancing. Parallel operation is validated up to four devices per leg when using matched layout, identical gate drive paths, and shared source inductance ≤2 nH.

Is the body diode in IRFS4020TRLPBF suitable for synchronous rectification in Class-D output filters?

No - the body diode is optimized for reverse recovery in hard-switched Class-D freewheeling, not forward conduction. Its V_SD = 1.3 V at 11 A and trr = 82–120 ns make it unsuitable as a synchronous rectifier; external Schottky or MOSFET-based active rectification is required for that function.

IRFS4020TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 105mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4.9V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS4020TRLPBF FAQ

1.How can I place an order for IRFS4020TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS4020TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS4020TRLPBF reliable?

The price and inventory of IRFS4020TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4020TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFS4020TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4020TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS4020TRLPBF?

IRFS4020TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS4020TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS4020TRLPBF?

For technical support, including IRFS4020TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4020TRLPBF requirements.

6.How does Aetrix verify that IRFS4020TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFS4020TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4020TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFS4020TRLPBF?

All IRFS4020TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4020TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS4020TRLPBF part is unused and in its original packaging.

Return procedure for IRFS4020TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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