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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS4115-7PPBF

Name: IRFS4115-7PPBF
Brand: Infineon Technologies
SKU: IRFS4115-7PPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS4115-7PPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Datasheet:: IRFS4115-7PPBF.pdf

Description:: MOSFET N-CH 150V 105A D2PAK

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Product details

Overview

IRFS4115-7PPBF from Infineon Technologies (formerly International Rectifier) is a 150 V, 105 A N-channel enhancement-mode HEXFET Power MOSFET in D2PAK-7L package, optimized for high-frequency hard-switched SMPS and synchronous rectification with 10.0 mΩ typical R_DS(on), 73 nC total gate charge, and enhanced body diode dV/dt/dI/dt ruggedness. It delivers robust unclamped inductive switching capability up to 63 A avalanche current and supports high-efficiency UPS and telecom power systems.

For engineers reviewing the IRFS4115-7PPBF datasheet, IRFS4115-7PPBF pinout, IRFS4115-7PPBF application, or IRFS4115-7PPBF equivalent, key selection criteria include its 150 V V_DS, 10.0 mΩ R_DS(on) at 10 V_GS, 82 ns reverse recovery time, 450 pF C_oss,eff(ER), and SOA-limited 420 A pulsed source current - all critical for high-density, high-reliability DC-DC and AC-DC designs.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted body diode design to achieve simultaneous improvement in dynamic dV/dt immunity (≥2.5 kV/μs), avalanche energy handling (380 mJ single-pulse), and reverse recovery softness (Q_rr = 271 nC at T_J = 25°C). Its gate threshold voltage (3.0–5.0 V) and low internal gate resistance (2.1 Ω) support stable PWM control across industrial temperature range.

The device features fully characterized capacitance profiles (C_iss = 5320 pF, C_rss = 110 pF) and thermally validated Safe Operating Area curves up to 100 μs pulse width, enabling reliable operation in ZVS/ZCS topologies and high-side switching configurations where Miller-induced shoot-through must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Maximum drain-source blocking voltage before avalanche onset; defines system bus voltage margin for 120 VAC-derived 375 VDC or 48 VDC telecom rails.
R_DS(on) typ.	10.0 mΩ @ V_GS = 10 V, T_J = 25°C - Enables ≤1.05 W conduction loss at 105 A continuous, supporting compact heatsink design in high-current output stages.
Q_g	73 nC max. - Determines gate driver power requirement and switching speed; enables <50 ns rise/fall times with 2 A peak driver current.
trr	82 ns max. @ T_J = 25°C - Limits reverse recovery losses during synchronous rectification; supports >500 kHz operation with controlled I_RRM of 6.0 A.
E_AS	380 mJ - Single-pulse avalanche energy rating at T_J = 25°C; allows safe operation under unclamped inductive turn-off transients in motor drives and PFC circuits.
R_θJC	0.40 °C/W - Junction-to-case thermal resistance; enables direct mounting to cold plates for >100 W dissipation without derating below 100°C case temperature.

Pinout & Package

IRFS4115-7PPBF uses the D2PAK-7L (TO-263-7) surface-mount package with exposed drain pad for thermal and electrical performance. The 7-pin layout integrates three paralleled source terminals and dual gate connections to minimize inductance and improve current sharing.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 (Source)	Power Source Return Path	Three independent source pins reduce source inductance and enable Kelvin sensing; critical for accurate current monitoring and fast switching stability.
4, 5 (Gate)	Control Input	Dual gate pins allow separate drive and feedback routing to suppress oscillation; supports gate resistor placement directly at device for optimal ringing control.
6, 7 (Drain)	Main Power Drain Node	Two drain pins connect to large copper area on PCB; combined with exposed backside pad, achieves <0.4 °C/W thermal path to heatsink.
Exposed Pad	Drain / Thermal Interface	Electrically tied to drain; soldered to PCB ground plane or heatsink for simultaneous thermal management and low-inductance power return.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	Rated ≥2.5 kV/μs - Prevents spurious turn-on during high dv/dt commutation, eliminating need for external snubbers in bridge-leg configurations.
Low C_oss,eff(TR)	520 pF - Reduces turn-off energy loss (E_off ∝ V² × C_oss) in hard-switched converters operating above 200 kHz.
Thermally limited E_AS	380 mJ - Enables robust fault tolerance in UPS and server PSUs without requiring overdesign of clamp circuitry.
Characterized SOA curves	Validated up to 100 μs pulse width - Allows precise transient stress modeling for IGBT replacement in industrial inverters and welding equipment.
Lead-free and RoHS-compliant	Meets J-STD-020 moisture sensitivity level 1 - Supports lead-free reflow assembly without popcorn cracking or delamination risk.

Applications

Server VRM Synchronous Rectifier

Telecom 48 V DC-DC Converter

Use Scenario: High-current, multiphase buck converter delivering 100+ A at 0.8–1.2 V to CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500–800 kHz with 105 A peak current per phase.

Use Value: 10.0 mΩ R_DS(on) minimizes conduction loss; 82 ns trr ensures clean dead-time recovery and reduces cross-conduction risk.

Use Scenario: Isolated forward or active-clamp forward converter converting 48 V input to 12 V/24 V intermediate bus in 5G base station power supplies.

IC Role / Device Role / Timing Role: Primary-side high-side switch with 150 V rating supporting 48 V × 2.5 safety margin and 73 nC Q_g enabling efficient 300–600 kHz operation.

Use Value: 380 mJ E_AS withstands transformer leakage inductance spikes; dual gate pins simplify gate loop layout for EMI reduction.

Uninterruptible Power Supply Inverter

Industrial Motor Drive Half-Bridge

Use Scenario: 1–3 kVA online UPS inverter stage generating 230 VAC from 380–400 VDC bus using full-bridge topology.

IC Role / Device Role / Timing Role: High-side and low-side switching element in each half-bridge leg, switching at 16–20 kHz with 105 A RMS current.

Use Value: Enhanced body diode dV/dt immunity prevents false triggering during bus voltage transitions; 0.40 °C/W R_θJC enables forced-air cooling without liquid heat sinks.

Use Scenario: 3-phase inverter driving 5–10 kW permanent magnet motors in CNC machines and packaging equipment.

IC Role / Device Role / Timing Role: Phase-leg switch rated for 150 V bus with 63 A avalanche current capability to absorb regenerative energy during rapid deceleration.

Use Value: Fully characterized SOA up to 100 μs supports safe operation during short-circuit events; 3× source pins reduce parasitic inductance for clean gate control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW90NF15	150 V, 90 A, R_DS(on) = 12.5 mΩ, Q_g = 105 nC, TO-247 package	Higher gate charge increases driver loss; larger through-hole package limits board density	Preferred when legacy TO-247 footprint compatibility is required and lower switching frequency (<100 kHz) permits higher Q_g penalty.
IXFH110N15T2	150 V, 110 A, R_DS(on) = 9.5 mΩ, Q_g = 120 nC, TO-247 package	Lower R_DS(on) improves conduction efficiency but higher Q_g degrades high-frequency switching performance	Selected for ultra-low conduction loss in 50–100 kHz industrial inverters where gate drive capability supports 120 nC charge.

Compared with STW90NF15 and IXFH110N15T2, IRFS4115-7PPBF offers superior high-frequency suitability due to its 73 nC Q_g and D2PAK-7L layout - enabling tighter gate loop control and lower EMI - while maintaining competitive R_DS(on) and industry-leading avalanche ruggedness in surface-mount form.

Availability

IRFS4115-7PPBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and uninterruptible power supply inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from original manufacturer production lots.

Supply support for IRFS4115-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices for industrial and energy-efficient systems.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in server, telecom, and industrial power conversion where ruggedness, thermal performance, and high-current density are critical.

FAQ

What is the maximum continuous drain current for IRFS4115-7PPBF at 100°C case temperature?

The maximum continuous drain current is 74 A at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from the 105 A rating at 25°C case temperature, governed by the 0.40 °C/W junction-to-case thermal resistance and 175°C maximum junction temperature limit.

Does IRFS4115-7PPBF support gate drive at 5 V logic levels?

No - the gate threshold voltage ranges from 3.0 V to 5.0 V, but full enhancement requires ≥10 V_GS to achieve the specified 10.0 mΩ R_DS(on). At 5 V_GS, R_DS(on) increases significantly (typically >40 mΩ), resulting in excessive conduction loss; a dedicated 10–12 V gate driver is mandatory for rated performance.

How is the D2PAK-7L package different from standard D2PAK (TO-263-3)?

The D2PAK-7L adds four extra terminals: two additional source pins (beyond the standard one), two gate pins, and retains the drain connection via the exposed pad. This configuration reduces source inductance by ~50%, enables Kelvin source sensing, and separates gate drive paths to suppress oscillation - unlike the 3-pin D2PAK which shares source/gate return paths and lacks layout flexibility.

Can IRFS4115-7PPBF replace older IRFS4115PbF in existing designs?

Yes - IRFS4115-7PPBF is the lead-free, RoHS-compliant successor to IRFS4115PbF, with identical electrical specifications, pinout, and thermal performance. The "7P" suffix denotes the 7-pin D2PAK variant, and the "-7PPBF" suffix confirms Pb-free plating and halogen-free molding compound; no layout or firmware changes are needed for drop-in replacement.

IRFS4115-7PPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 105A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11.8mOhm @ 63A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5320 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 380W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK (7-Lead)

IRFS4115-7PPBF FAQ

1.How can I place an order for IRFS4115-7PPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS4115-7PPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS4115-7PPBF reliable?

The price and inventory of IRFS4115-7PPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4115-7PPBF is usually 5 days.

3.What payment methods are accepted for IRFS4115-7PPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4115-7PPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS4115-7PPBF?

IRFS4115-7PPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS4115-7PPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS4115-7PPBF?

For technical support, including IRFS4115-7PPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4115-7PPBF requirements.

6.How does Aetrix verify that IRFS4115-7PPBF is sourced from the original manufacturer or authorized distributors?

All IRFS4115-7PPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4115-7PPBF meets industry standards.

7.What is the process for return or replacement of IRFS4115-7PPBF?

All IRFS4115-7PPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4115-7PPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS4115-7PPBF part is unused and in its original packaging.

Return procedure for IRFS4115-7PPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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