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Infineon Technologies IRFS4115PBF
- Part No.:
- IRFS4115PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFS4115PBF.pdf
- Description:
- MOSFET N-CH 150V 195A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,895
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Product details
Overview
IRFS4115PBF from Infineon Technologies is a 150V, 99A (silicon-limited), N-channel enhancement-mode HEXFET Power MOSFET in TO-262 package, optimized for high-efficiency synchronous rectification and hard-switched SMPS topologies. It features 10.3 mΩ typical RDS(on), 77 nC total gate charge, and enhanced body diode dV/dt and dI/dt capability for robust unclamped inductive switching.
For engineers reviewing the IRFS4115PBF datasheet, IRFS4115PBF pinout, IRFS4115PBF application, or IRFS4115PBF equivalent, key selection criteria include avalanche energy rating (830 mJ), junction-to-case thermal resistance (0.4 °C/W), SOA compliance at 100 μs–DC, and body diode reverse recovery performance (Qrr = 300 nC @ 25°C).
Technical Context
This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted edge termination to achieve improved avalanche ruggedness and dynamic dV/dt immunity. Its low Coss eff. (TR) of 530 pF and Crss of 105 pF support high-frequency operation up to 1 MHz in resonant converters.
The integrated body diode exhibits fast reverse recovery (trr = 86 ns) and low VSD (1.3 V), enabling efficient synchronous rectification without external Schottky diodes. Gate threshold voltage (3.0–5.0 V) and transconductance (97 S) are tightly specified for predictable turn-on behavior across temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 150 V - Maximum blocking voltage before avalanche onset; supports 120 V bus designs with 25% margin. |
| RDS(on) typ. | 10.3 mΩ @ VGS = 10 V, TJ = 25°C - Enables <1 W conduction loss at 10 A continuous drain current. |
| ID (silicon) | 99 A @ TC = 25°C - Thermal limit set by junction temperature; requires heatsink for sustained >50 A operation. |
| Qg | 77 nC max - Determines gate driver power requirement; compatible with standard 1-A peak drivers at ≤500 kHz. |
| EAS | 830 mJ - Single-pulse avalanche energy rating; allows safe operation under inductive load dump without snubber. |
| trr | 86 ns @ TJ = 25°C - Fast body diode recovery reduces switching losses in synchronous buck and LLC phases. |
| RθJC | 0.4 °C/W - Enables direct mounting to cold plate; 100 W dissipation raises case temperature only 40°C above heatsink. |
Pinout & Package
IRFS4115PBF uses the TO-262 (ISOTOP) package: 3-pin, single-ended, through-hole mount with isolated tab (drain-connected). The package provides low-inductance source path and mechanical robustness for industrial power stages.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal for channel inversion | Accepts 10 V logic-level drive; internal RG = 2.3 Ω limits ringing but requires <10 Ω external series resistance for optimal EMI control. |
| D (Drain) | Main high-side current path and heat sink interface | Tab is electrically connected to drain; must be insulated from chassis unless referenced to system ground. |
| S (Source) | Return path for load current and gate reference | Low-inductance Kelvin connection recommended for high-di/dt applications to avoid false turn-off. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced avalanche ruggedness | 830 mJ single-pulse EAS with thermally limited failure mode-enables reliable operation in UPS and motor drive fault conditions. |
| Optimized body diode dI/dt capability | di/dt ≤ 1040 A/μs supported-reduces risk of commutation failure in synchronous rectifiers during light-load transitions. |
| Fully characterized SOA | DC-rated SOA up to 100 A @ 50 V with TC = 25°C-validates linear-mode use in hot-swap and electronic fuse circuits. |
| Lead-free and RoHS-compliant | Pb-free plating and halogen-free mold compound-meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life. |
Applications
| High-Efficiency Server PSU | Industrial Uninterruptible Power Supply |
|---|---|
Use Scenario: Primary-side switch in 3.3 kW telecom rectifier with interleaved PFC + LLC topology. IC Role / Device Role / Timing Role: High-side switching element in half-bridge LLC primary; operates at 300–500 kHz with ZVS. Use Value: Low Qgd/Qgs ratio (26/28 nC) minimizes Miller-induced shoot-through risk during high-dV/dt transitions. |
Use Scenario: Bidirectional DC link switch in 10 kVA double-conversion UPS with battery backup. IC Role / Device Role / Timing Role: Inverter leg switch handling 150 V DC bus and 60 A RMS output current. Use Value: 195 A pulsed drain rating and 396 A body diode surge current support short-circuit ride-through per IEC 62040-1. |
| Hard-Switched Motor Drive Inverter | High-Frequency Induction Heater |
Use Scenario: 7.5 kW three-phase inverter driving permanent magnet motor in HVAC compressor. IC Role / Device Role / Timing Role: Phase-leg upper switch subjected to 120 V DC bus and 40 A peak phase current. Use Value: 0.4 °C/W RθJC enables direct cold-plate mounting, reducing thermal cycling stress vs. TO-247 alternatives. |
Use Scenario: Resonant tank switch in 200 kHz induction heating generator delivering 5 kW to work coil. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) device operating with 100% duty cycle at elevated temperature. Use Value: Coss eff. (ER) = 460 pF ensures predictable resonant frequency stability across temperature and voltage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, medium-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N15F7 | RDS(on) = 9.5 mΩ (lower), Qg = 85 nC (higher), TO-220FP package, RθJC = 0.55 °C/W | Higher conduction loss margin but lower thermal performance; unsuitable for >75 A continuous without forced air. | Select when board space constraints favor smaller footprint over thermal headroom. |
| IXFH110N15T2 | RDS(on) = 11.5 mΩ (higher), EAS = 1100 mJ (higher), TO-247 package, RθJC = 0.35 °C/W | Superior avalanche immunity and thermal conductivity, but larger PCB area and higher gate drive energy. | Select for mission-critical industrial inverters requiring extended unclamped inductive switching endurance. |
Compared with STP110N15F7 and IXFH110N15T2, IRFS4115PBF offers the best balance of low gate charge, moderate RDS(on), and TO-262 thermal performance-ideal for cost-sensitive, medium-power SMPS where layout density and thermal management are co-optimized.
Availability
IRFS4115PBF is available at Aetrix Electronics and suitable for high-efficiency server PSUs, industrial uninterruptible power supplies, and hard-switched motor drive inverters requiring stable component supply and long-term manufacturing continuity.
Supply support for IRFS4115PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global fabrication and packaging infrastructure.
IRFS4115PBF belongs to the HEXFET® Power MOSFET product line, engineered for high-reliability, high-efficiency power conversion in telecom, industrial, and renewable energy systems where ruggedness and thermal performance are critical.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRFS4115PBF supports 70 A continuous drain current at TC = 100°C with VGS = 10 V, as defined by silicon-limited conduction and thermal derating. This value reflects junction temperature limitation-not package wire bond capacity-and assumes adequate heatsinking to maintain case temperature.
Does IRFS4115PBF require a gate resistor for reliable operation?
Yes-a 4.7 Ω to 10 Ω series gate resistor is recommended to dampen parasitic oscillation caused by trace inductance and internal gate resistance (2.3 Ω). Without it, ringing can exceed VGS absolute maximum (±20 V), risking gate oxide damage during fast switching.
Can IRFS4115PBF be used in linear (active) mode applications?
Yes-the device is fully characterized for Safe Operating Area (SOA) down to DC, with published curves for 100 μs, 1 ms, 10 ms, and DC operation. Linear use requires strict thermal design: at 50 V VDS, maximum continuous current is ~25 A with TC ≤ 60°C to stay within 175°C TJ.
How does the body diode performance compare to discrete Schottky diodes?
The integrated body diode has VSD = 1.3 V and trr = 86 ns-higher forward drop than 0.5 V Schottky diodes but significantly lower reverse recovery charge (Qrr = 300 nC vs. >1000 nC for fast recovery diodes). It eliminates component count and layout complexity in synchronous rectifiers where moderate efficiency trade-offs are acceptable.
IRFS4115PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 12.1mOhm @ 62A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 120 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5270 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRFS4115PBF FAQ
1.How can I place an order for IRFS4115PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFS4115PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFS4115PBF reliable?
The price and inventory of IRFS4115PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4115PBF is usually 5 days.
3.What payment methods are accepted for IRFS4115PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4115PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFS4115PBF?
IRFS4115PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFS4115PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFS4115PBF?
For technical support, including IRFS4115PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4115PBF requirements.
6.How does Aetrix verify that IRFS4115PBF is sourced from the original manufacturer or authorized distributors?
All IRFS4115PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4115PBF meets industry standards.
7.What is the process for return or replacement of IRFS4115PBF?
All IRFS4115PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4115PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFS4115PBF part is unused and in its original packaging.
Return procedure for IRFS4115PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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