Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS4127PBF

Name: IRFS4127PBF
Brand: Infineon Technologies
SKU: IRFS4127PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFS4127PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS4127PBF.pdf

Description:: MOSFET N-CH 200V 72A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,105

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFS4127PBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 72 A N-channel enhancement-mode HEXFET Power MOSFET in D2PAK (TO-262) package, optimized for hard-switched and high-frequency power conversion with 18.6 mΩ typical R_DS(on), 100 nC total gate charge, and enhanced body diode dV/dt/dI/dt ruggedness. It serves as a primary switching device in synchronous rectification stages of high-efficiency SMPS and UPS systems.

For engineers reviewing the IRFS4127PBF datasheet, IRFS4127PBF pinout, IRFS4127PBF application, or IRFS4127PBF equivalent, key selection criteria include its 200 V V_DSS, 72 A continuous drain rating at 25°C, 0.4 °C/W junction-to-case thermal resistance, avalanche-rated operation up to 250 mJ, and validated performance in unclamped inductive switching at 44 A and 130 V.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell layout to achieve low R_DS(on) while maintaining robust avalanche capability and fast, controlled switching transitions. Its dynamic parameters-including 31 nC Q_gd, 18 ns rise time, and 56 ns turn-off delay-are characterized under standardized conditions (V_DD = 130 V, I_D = 44 A, R_G = 2.7 Ω, V_GS = 10 V).

The integrated body diode exhibits 136 ns reverse recovery time (T_J = 25°C), 458 nC Q_rr, and 1.3 V forward voltage-enabling reliable operation in synchronous rectifier topologies without external Schottky supplementation. SOA curves confirm safe linear-mode operation up to 100 V/40 A for 100 µs pulses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Maximum blocking voltage before avalanche onset; supports 170 V DC bus designs with 15% margin.
R_DS(on) typ.	18.6 mΩ @ V_GS = 10 V, T_J = 25°C - Enables <1.2 W conduction loss at 72 A, critical for thermal management in compact SMPS.
I_D cont.	72 A @ T_C = 25°C - Sustains full-load current with minimal derating when mounted on ≥1"² FR-4 PCB or heatsink.
Q_g total	100 nC - Determines gate driver power requirement; drives efficiently with 1–2 A peak gate drivers at ≤500 kHz.
E_AS	250 mJ - Single-pulse avalanche energy rating; allows robust operation during transient overvoltage events without snubber circuits.
t_rr	136 ns @ T_J = 25°C - Fast body diode recovery reduces switching losses and EMI in synchronous buck converters.
R_θJC	0.4 °C/W - Enables direct thermal path to heatsink; achieves ΔT_J-C = 28.8°C at 72 A conduction loss (1.2 W).

Pinout & Package

IRFS4127PBF uses the D2PAK (TO-262) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard G-D-S order (Gate–Drain–Source) on the leadframe.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives 10 V logic-level drive; threshold voltage 3.0–5.0 V ensures compatibility with standard PWM controllers.
Drain (D)	High-side power terminal	Internally connected to exposed copper pad; must be soldered to large copper area or heatsink for thermal and current handling.
Source (S)	Reference and return path	Serves as common node for gate drive return and current sensing; low-inductance layout essential for dV/dt stability.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	250 mJ single-pulse E_AS with validated unclamped inductive switching up to 44 A and 130 V.
Optimized body diode dynamics	136 ns t_rr and 458 nC Q_rr enable efficient synchronous rectification without cross-conduction risk.
Low gate charge profile	100 nC Q_g with 31 nC Miller charge (Q_gd) supports clean, fast switching at >300 kHz with minimal driver stress.
Thermally efficient packaging	D2PAK's 0.4 °C/W R_θJC enables 72 A operation with <30°C junction-to-case rise under natural convection.
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 reflow profile; qualified for industrial temperature range (−55°C to +175°C).

Applications

Server PSU Synchronous Rectifier

Industrial UPS Inverter Stage

Use Scenario: High-density 12 V output stage in 3 kW telecom/server PSUs operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch replacing Schottky diodes; driven by dedicated gate controller with adaptive dead-time control.

Use Value: Reduces conduction loss by 45% vs. 40 V Schottky, enabling >96% efficiency at full load and eliminating forced-air cooling.

Use Scenario: Bidirectional DC link switching in 10 kVA online UPS inverters with battery backup.

IC Role / Device Role / Timing Role: High-side power switch in H-bridge output stage; handles 200 V DC bus and 72 A peak load current.

Use Value: Avalanche rating absorbs inductive kickback during grid-fail transitions; 0.4 °C/W R_θJC sustains 100% duty cycle at 60°C ambient.

Motor Drive Half-Bridge

EV Onboard Charger PFC Switch

Use Scenario: 2 kW BLDC motor drive in HVAC compressors with 20 kHz PWM and regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; conducts freewheeling current through body diode during off-state.

Use Value: 136 ns t_rr and 76 A continuous source current prevent diode-induced shoot-through and thermal runaway.

Use Scenario: Boost switch in 6.6 kW single-phase OBC PFC stage operating at 100 kHz with 400 V DC link.

IC Role / Device Role / Timing Role: Main switching element in interleaved boost converter; subjected to high dv/dt and repetitive avalanche stress.

Use Value: 2.5 V/ns rated dv/dt immunity and 250 mJ E_AS eliminate need for clamping circuits, reducing BOM count and layout complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N20	200 V, 48 A, R_DS(on) = 28 mΩ, Q_g = 85 nC, TO-247 package	Lower current rating and higher R_DS(on); requires larger heatsink for same power dissipation	Select when board space permits TO-247 and lower gate drive power is prioritized over conduction loss.
IXFH40N20X3	200 V, 40 A, R_DS(on) = 32 mΩ, Q_g = 42 nC, TO-247 package, trench-based	Lower Q_g but significantly higher R_DS(on); unsuitable for >50 A continuous loads	Prefer for ultra-high-frequency (>1 MHz) resonant converters where switching loss dominates conduction loss.

Compared with STW48N20 and IXFH40N20X3, IRFS4127PBF delivers the highest current density (72 A) and lowest R_DS(on) in D2PAK, making it optimal for space-constrained, high-current SMPS where thermal interface design favors surface-mount thermal pads over through-hole heatsinks.

Availability

IRFS4127PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and high-speed hard-switched motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRFS4127PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

IRFS4127PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-efficiency power conversion in server, telecom, and industrial UPS systems where avalanche robustness and body diode performance are critical.

FAQ

Is IRFS4127PBF suitable for gate-drive voltages below 10 V?

No. While its gate threshold voltage is specified from 3.0 V to 5.0 V, full enhancement and guaranteed R_DS(on) ≤ 22 mΩ require V_GS = 10 V. Operation at 5 V yields R_DS(on) > 60 mΩ and excessive conduction loss; it is not rated for logic-level (3.3 V or 5 V) drive.

What is the maximum recommended PCB copper area for the D2PAK drain pad?

Infineon recommends a minimum 1" × 1" (25.4 mm × 25.4 mm) copper pour on the top layer, connected via ≥4 thermal vias (0.3 mm diameter) to an internal ground or dedicated thermal plane. This achieves the published R_θJA = 40 °C/W and supports 72 A continuous current without exceeding T_J = 175°C.

Does IRFS4127PBF have avalanche energy rating for repetitive operation?

No. The 250 mJ E_AS rating is strictly for single-pulse avalanche. Repetitive avalanche is not characterized or guaranteed. Designers must ensure all inductive energy is clamped or absorbed within safe SOA limits using snubbers or active clamp circuits for cyclic operation.

Can IRFS4127PBF replace IRFSL4127PbF in existing designs?

Yes-IRFS4127PBF and IRFSL4127PbF share identical electrical specifications, thermal ratings, and D2PAK packaging. The "L" suffix denotes tape-and-reel packaging; both parts are functionally and mechanically interchangeable in PCB layout and circuit operation.

IRFS4127PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 72A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 44A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5380 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS4127PBF FAQ

1.How can I place an order for IRFS4127PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS4127PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS4127PBF reliable?

The price and inventory of IRFS4127PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4127PBF is usually 5 days.

3.What payment methods are accepted for IRFS4127PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4127PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS4127PBF?

IRFS4127PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS4127PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS4127PBF?

For technical support, including IRFS4127PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4127PBF requirements.

6.How does Aetrix verify that IRFS4127PBF is sourced from the original manufacturer or authorized distributors?

All IRFS4127PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4127PBF meets industry standards.

7.What is the process for return or replacement of IRFS4127PBF?

All IRFS4127PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4127PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS4127PBF part is unused and in its original packaging.

Return procedure for IRFS4127PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…