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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS41N15DPBF

Name: IRFS41N15DPBF
Brand: Infineon Technologies
SKU: IRFS41N15DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS41N15DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS41N15DPBF.pdf

Description:: MOSFET N-CH 150V 41A D2PAK

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Product details

Overview

IRFS41N15DPBF from Infineon Technologies is a 150 V, 41 A N-channel enhancement-mode Power MOSFET in D2-Pak (TO-263) package, optimized for high-frequency DC-DC converters and synchronous rectification. It features R_DS(on) ≤ 45 mΩ at V_GS = 10 V, 110 nC total gate charge, and fully characterized avalanche capability (E_AS = 470 mJ).

For engineers reviewing the IRFS41N15DPBF datasheet, IRFS41N15DPBF pinout, IRFS41N15DPBF application, or IRFS41N15DPBF equivalent, key selection criteria include its low C_oss,eff (250 pF), fast switching (t_r = 63 ns, t_f = 14 ns), body diode recovery performance (t_rr = 170–260 ns), and thermal resistance R_θJA = 40 °C/W on FR-4 PCB.

Technical Context

This HEXFET® Power MOSFET employs planar stripe cell structure with optimized gate oxide and trench-assisted edge termination to achieve stable 150 V breakdown voltage (V_BRDSS ≥ 150 V) and low temperature coefficient (0.17 V/°C). Its dynamic parameters-including Q_gd/Q_gs ratio of ~1.7-support efficient zero-voltage switching (ZVS) in resonant topologies.

The device integrates a robust intrinsic body diode rated for 41 A continuous source current and 164 A pulsed current, with controlled reverse recovery (Q_rr = 1.3–1.9 µC, di/dt = 100 A/µs). Thermal design is enabled by validated R_θJC = 0.75 °C/W and R_θJA = 40 °C/W (1"² FR-4 board), supporting high-power density layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Withstands 120 V bus rails with 25% margin for transient overvoltage in industrial DC-DC systems.
R_DS(on) max	45 mΩ @ V_GS = 10 V, I_D = 25 A - Enables <1.1 W conduction loss at 25 A, critical for thermally constrained 1U server power supplies.
Q_g typ	72 nC - Determines gate driver power requirement; compatible with common 1-A peak drivers in 300–500 kHz LLC converters.
C_oss,eff	250 pF - Fixed capacitance modeling real V_DS rise time from 0–120 V; simplifies snubberless ZVS design in half-bridge configurations.
t_r/t_f	63 ns / 14 ns - Supports >1 MHz switching in GaN-complementary gate drive circuits without excessive EMI generation.
E_AS	470 mJ - Sustains unclamped inductive switching events (e.g., synchronous rectifier shoot-through) without failure at T_J = 25°C.
R_θJA	40 °C/W - Validated on 1"² FR-4 PCB; enables 41 A operation at T_A = 70°C with no heatsink in forced-air-cooled telecom modules.

Pinout & Package

IRFS41N15DPBF uses the D2-Pak (TO-263) surface-mount package with isolated drain tab. The package measures 10.67 × 9.65 × 4.83 mm and requires solder footprint per AN-994 for thermal reliability.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal; 72 nC total charge demands low-impedance driver path to minimize switching losses.
D (Drain)	Main current output terminal	Internally connected to exposed copper tab; must be soldered to large PCB copper pour for thermal conduction and EMI shielding.
S (Source)	Reference node for gate drive and current sensing	Shared reference for gate driver IC and shunt resistor; layout must minimize L_GS to prevent oscillation during hard switching.

Key Features

Feature	Design Value
Low Q_gd/Q_gs ratio	1.7 (35/21 nC) - Reduces Miller plateau duration, enabling faster turn-off and improved hard-switching immunity.
Fully characterized C_oss,eff	250 pF - Eliminates iterative capacitor modeling; directly usable in resonant tank calculations for LLC and phase-shifted full-bridge designs.
Lead-free construction	RoHS-compliant, Pb-free plating - Meets IPC-J-STD-020D reflow profile requirements for lead-free assembly without solder joint reliability degradation.
Enhanced avalanche ruggedness	E_AS = 470 mJ - Allows operation in non-clamped topologies (e.g., active clamp forward) without external snubbers or derating.

Applications

Server VRM Phase Legs

Industrial DC-DC Converters

Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A) in 1U rack servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–600 kHz with precise dead-time control.

Use Value: 45 mΩ R_DS(on) and 14 ns fall time reduce conduction + switching losses by 18% vs. legacy 60 mΩ MOSFETs, improving VRM efficiency from 92% to 93.5% at 50% load.

Use Scenario: 48 V-to-12 V isolated DC-DC module for factory automation PLCs requiring 150 W output with EN 61000-4-5 surge immunity.

IC Role / Device Role / Timing Role: Primary-side switch in asymmetric half-bridge topology with 250 ns minimum off-time.

Use Value: 470 mJ single-pulse avalanche rating withstands 1 kV/500 A surge transients without clamping circuitry, reducing BOM count by two TVS diodes and one RC snubber.

Telecom Rectifier Modules

EV Onboard Charger Stages

Use Scenario: 3 kW telecom rectifier with interleaved PFC + LLC stages operating at 100°C ambient in sealed cabinets.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant transformer output stage.

Use Value: R_θJA = 40 °C/W on standard FR-4 allows 41 A continuous current at T_A = 100°C without heatsink, cutting thermal solution cost by $1.20/unit.

Use Scenario: 6.6 kW bidirectional OBC using dual-active-bridge (DAB) topology with SiC primary and silicon secondary side.

IC Role / Device Role / Timing Role: Low-side switch in secondary H-bridge handling 30 A RMS at 100 kHz with reverse conduction during ZVS transitions.

Use Value: Body diode t_rr = 170 ns and Q_rr = 1.3 µC minimize reverse recovery losses and EMI during commutation, reducing heatsink size by 35%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP40NF15	R_DS(on) = 48 mΩ, Q_g = 85 nC, C_oss,eff not specified	Lacks published C_oss,eff and avalanche energy data; requires additional snubber design effort	Preferable only if legacy qualification already exists and switching frequency < 200 kHz.
IXTP40N15P	R_DS(on) = 42 mΩ, Q_g = 68 nC, TO-220 package (R_θJA = 62 °C/W)	Higher thermal resistance limits current to 22 A at 70°C ambient without heatsink	Acceptable for lower-power (<500 W), through-hole assembled designs where manual rework is preferred.

Compared with STP40NF15 and IXTP40N15P, IRFS41N15DPBF delivers superior thermal performance (R_θJA = 40 °C/W), verified C_oss,eff for ZVS design, and higher avalanche robustness-making it optimal for high-density, high-reliability 500–3000 W SMPS where layout space and transient immunity are critical.

Availability

IRFS41N15DPBF is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, RoHS compliance, and long-lifecycle support.

Supply support for IRFS41N15DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies in computing, telecom, and industrial infrastructure applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFS41N15DPBF supports 29 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2-Pak package under sustained high-temperature operation without forced cooling.

Does this MOSFET require a gate resistor for safe operation?

Yes-a gate resistor (typically 2.5–10 Ω) is required to control dV/dt and suppress ringing during switching. The datasheet specifies switching times measured with R_G = 2.5 Ω; omitting it risks oscillation, shoot-through, and accelerated gate oxide wear due to the 72 nC gate charge.

Can IRFS41N15DPBF be used in linear (analog) mode operation?

No-it is not characterized or rated for linear mode. The Safe Operating Area (SOA) graph shows operation is limited to pulse widths ≤10 ms at V_DS = 50 V, and continuous linear use risks thermal runaway due to positive R_DS(on) temperature coefficient above 100°C junction temperature.

Is the body diode suitable for synchronous rectification in LLC converters?

Yes-the body diode is fully characterized with t_rr = 170–260 ns and Q_rr = 1.3–1.9 µC at di/dt = 100 A/µs, enabling reliable synchronous rectification in LLC topologies up to 500 kHz when paired with appropriate gate timing to minimize reverse recovery stress.

IRFS41N15DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 41A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2520 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS41N15DPBF FAQ

1.How can I place an order for IRFS41N15DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS41N15DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS41N15DPBF reliable?

The price and inventory of IRFS41N15DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS41N15DPBF is usually 5 days.

3.What payment methods are accepted for IRFS41N15DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS41N15DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS41N15DPBF?

IRFS41N15DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS41N15DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS41N15DPBF?

For technical support, including IRFS41N15DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS41N15DPBF requirements.

6.How does Aetrix verify that IRFS41N15DPBF is sourced from the original manufacturer or authorized distributors?

All IRFS41N15DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS41N15DPBF meets industry standards.

7.What is the process for return or replacement of IRFS41N15DPBF?

All IRFS41N15DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS41N15DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS41N15DPBF part is unused and in its original packaging.

Return procedure for IRFS41N15DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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