Infineon Technologies IRFS41N15DTRLP

Overview

IRFS41N15DTRLP from Infineon Technologies is a 150 V, 41 A N-channel enhancement-mode HEXFET® Power MOSFET in D2-Pak (TO-263) surface-mount package, rated for continuous drain current of 41 A at T_C = 25°C and R_DS(on) ≤ 0.045 Ω at V_GS = 10 V. It features fully characterized avalanche capability (E_AS = 470 mJ), low gate-to-drain charge (Q_gd = 35–52 nC), and optimized output capacitance (C_{oss eff.} = 250 pF) for high-frequency DC-DC converters.

For engineers reviewing the IRFS41N15DTRLP datasheet, IRFS41N15DTRLP pinout, IRFS41N15DTRLP application, or IRFS41N15DTRLP equivalent, key selection criteria include its D2-Pak thermal performance (R_θJA = 40 °C/W on 1" FR-4), body diode recovery (t_rr = 170–260 ns), and lead-free compliance-critical for compact, high-efficiency power stages in industrial SMPS and motor drives.

Technical Context

This MOSFET employs planar silicon process with optimized cell geometry to achieve low R_DS(on) while maintaining robust unclamped inductive switching (UIS) capability. Its dynamic parameters-including Q_g = 72–110 nC, C_iss = 2520 pF, and Cr_ss = 110 pF-are fully characterized across V_DS range to support accurate loss modeling in hard-switched topologies.

The device integrates a fast, low-V_SD body diode (V_SD ≤ 1.3 V at I_S = 25 A, T_J = 25°C) with controlled reverse recovery (Q_rr = 1.3–1.9 µC, di/dt = 100 A/µs). Thermal design is enabled by validated junction-to-case resistance (R_θJC = 0.75 °C/W) and case-to-sink interface data (R_θCS = 0.50 °C/W, greased flat surface).

Key Specifications

Pinout & Package

The IRFS41N15DTRLP uses the D2-Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 10.67 mm × 9.65 mm × 4.83 mm and is lead-free compliant per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL110N10F7 and IXTP40N15X2, IRFS41N15DTRLP uniquely balances 150 V rating, D2-Pak SMT compatibility, and validated avalanche ruggedness-making it the only option among the three suitable for compact, transient-hardened 48–100 V DC-DC modules.

Availability

IRFS41N15DTRLP is available at Aetrix Electronics and suitable for industrial DC-DC converters, motor drive half-bridge stages, and photovoltaic DC optimizers requiring stable component supply and lead-free SMT compatibility.

Supply support for IRFS41N15DTRLP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power supplies, motor controls, and renewable energy systems where thermal robustness and transient immunity are mandatory.

FAQ

What is the maximum allowable gate-to-source voltage for IRFS41N15DTRLP?

The absolute maximum V_GS is ±30 V. Operation beyond ±20 V risks permanent gate oxide damage, even for short pulses. For reliable 10 V enhancement, gate drive must be tightly regulated with clamping (e.g., Zener diode) to prevent overshoot during fast switching transitions.

Can IRFS41N15DTRLP be used in synchronous rectification without an external Schottky diode?

Yes-the integrated body diode has V_SD ≤ 1.3 V at 25 A and t_rr = 170–260 ns, enabling efficient synchronous rectification in 100–500 kHz DC-DC converters. However, dead-time must be precisely tuned (≥100 ns) to avoid cross-conduction, as Q_rr = 1.3–1.9 µC contributes to shoot-through current.

What is the recommended PCB footprint and thermal pad layout for D2-Pak mounting?

Per Infineon Application Note AN-994, use a 10.6 mm × 9.6 mm exposed copper pad with 4–6 thermal vias (0.3 mm diameter, filled/plated) connecting to inner ground planes. Minimum solder mask opening matches pad size; stencil aperture should be 110% of pad area for optimal paste release and void minimization.

Does IRFS41N15DTRLP support paralleling for higher current capacity?

Yes-its positive R_DS(on) temperature coefficient (0.17 V/°C) ensures inherent current sharing. Parallel operation requires matched gate drive impedance (<2 Ω per device), symmetrical layout, and shared source inductance <1 nH to prevent oscillation. Derate total current by 15% for thermal margin in multi-device configurations.