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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS4227PBF

Name: IRFS4227PBF
Brand: Infineon Technologies
SKU: IRFS4227PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS4227PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS4227PBF.pdf

Description:: MOSFET N-CH 200V 62A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,310

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Product details

Overview

IRFS4227PBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 130 A, 22 mΩ N-channel D2Pak power MOSFET optimized for plasma display panel (PDP) sustain, energy recovery, and pass-switch applications. It features 70 nC total gate charge, 240 V repetitive avalanche rating, 175 °C maximum junction temperature, and low EPULSE energy dissipation under inductive switching.

For engineers reviewing the IRFS4227PBF datasheet, IRFS4227PBF pinout, IRFS4227PBF application, or IRFS4227PBF equivalent, key selection criteria include its 22 mΩ R_DS(on) at V_GS = 10 V, 240 V avalanche capability, fast 33 ns turn-on delay, 31 ns fall time, and suitability for high-reliability PDP sustain circuits requiring robust unclamped inductive switching performance.

Technical Context

This HEXFET® power MOSFET employs advanced silicon process technology to achieve low on-resistance and high peak current capability while maintaining stable threshold voltage over temperature (−13 mV/°C coefficient). Its internal structure supports high dv/dt immunity and low source/drain inductance (L_S = 7.5 nH, L_D = 4.5 nH), critical for minimizing shoot-through risk in half-bridge PDP sustain stages.

The device is characterized for operation up to 175 °C junction temperature with validated thermal resistance R_θJC = 0.45 °C/W (typical) and 0.65 °C/W (end-of-life after 1000 thermal cycles). Its body diode exhibits 100–150 ns reverse recovery time and 430–640 nC Q_rr, enabling efficient energy recovery in resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	200 V - Maximum blocking voltage for PDP sustain bus operation
R_DS(on) @ 10 V	22 mΩ typ. - Low conduction loss at rated 130 A continuous drain current
Q_g	70 nC typ. - Enables fast switching with moderate gate drive power
I_RP @ T_C = 100°C	130 A - Sustains high peak current during PDP sustain pulses
E_PULSE	910 µJ max. - Low per-pulse energy dissipation reduces thermal stress in repetitive switching
T_J max	175 °C - Extended thermal margin for high-power density PDP modules
V_DS(Avalanche)	240 V typ. - Robust unclamped inductive switching capability beyond rated V_DS

Pinout & Package

IRFS4227PBF is housed in a surface-mount D2Pak (TO-263) package with three terminals: Gate (G), Drain (D), and Source (S). The package features isolated drain tab for direct heatsinking and optimized thermal path to case.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives 10 V logic-level drive; 70 nC Q_g requires ~1.4 A peak gate current for 50 ns rise time
D	High-side drain connection	Exposed copper drain pad; electrically connected to heatsink; carries full load current
S	Source return path	Common reference for gate drive and current sensing; internal source inductance 7.5 nH affects di/dt-induced voltage spikes

Key Features

Feature	Design Value
Optimized for PDP sustain	Low EPULSE (≤910 µJ) minimizes heat generation during 100–200 kHz sustain pulses
Repetitive avalanche capability	Rated for 240 V avalanche with 62 mJ E_AR, enabling reliable operation without external snubbers
Fast switching transitions	33 ns t_d(on), 20 ns t_r, 21 ns t_d(off), 31 ns t_f reduce switching losses in high-frequency PDP drivers
High-temperature ruggedness	175 °C T_J max and −13 mV/°C V_GS(th) drift ensure stable turn-on behavior across operating range

Applications

Plasma Display Panel (PDP) Sustain Circuit

Energy Recovery Resonant Converter

Use Scenario: Driving sustain electrodes in AC plasma displays at 100–200 kHz with ±170 V swing.

IC Role / Device Role / Timing Role: High-side switch in half-bridge topology; handles bidirectional current during resonance.

Use Value: 22 mΩ R_DS(on) and 130 A I_RP enable high-efficiency sustain with minimal conduction loss and thermal derating.

Use Scenario: Recovering stored energy from PDP electrode capacitance via resonant LC tank.

IC Role / Device Role / Timing Role: Main switching element controlling resonant current flow and zero-voltage switching timing.

Use Value: 240 V avalanche rating and 100–150 ns t_rr body diode support reliable energy transfer without clamping diodes.

Pass-Switch for High-Voltage DC Bus

Industrial Inverter Half-Bridge Stage

Use Scenario: Isolating or enabling high-current DC paths in industrial power supplies or battery systems.

IC Role / Device Role / Timing Role: Unidirectional pass transistor controlled by gate voltage; no PWM required.

Use Value: 175 °C T_J rating and 0.45 °C/W R_θJC allow sustained 130 A conduction with compact heatsinking.

Use Scenario: Medium-power motor drive or UPS inverter stage operating below 200 V bus voltage.

IC Role / Device Role / Timing Role: Low-side or high-side switch in 3-phase bridge; commutates inductive motor current.

Use Value: Low Q_gd/Q_g ratio (23/70 nC) improves controllability during hard-switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP4227PBF	TO-247 package; identical electrical specs but higher R_θJA (40 °C/W vs. 0.45 °C/W case-to-ambient not applicable; R_θJC = 0.45 °C/W same)	Requires through-hole PCB layout and larger heatsink footprint	Select when mechanical mounting constraints favor TO-247 or legacy board compatibility is required
STP130N20F6	200 V, 130 A, 20 mΩ; lower Q_g (52 nC); no specified avalanche rating	Lacks documented repetitive avalanche capability; unsuitable for unclamped inductive loads	Select only in clamped or ZVS topologies where avalanche stress is absent

Compared with IRFP4227PBF and STP130N20F6, IRFS4227PBF offers superior thermal interface via D2Pak's low R_θJC, verified 240 V avalanche robustness for PDP sustain, and optimized EPULSE for high-frequency pulse trains-making it uniquely suited for thermally constrained, high-reliability plasma display applications.

Availability

IRFS4227PBF is available at Aetrix Electronics and suitable for plasma display panel sustain circuits, energy recovery converters, and high-current pass-switch applications requiring stable component supply and long-term industrial availability.

Supply support for IRFS4227PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

The IRFS4227PBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in plasma display sustain, resonant energy recovery, and medium-voltage industrial power conversion.

FAQ

What is the maximum continuous drain current for IRFS4227PBF at 100°C case temperature?

The maximum continuous drain current (I_D) for IRFS4227PBF at T_C = 100°C is 130 A when V_GS = 10 V. This rating assumes proper heatsinking with R_θJC ≤ 0.45 °C/W and accounts for thermal derating above 25°C ambient. Operation beyond this limit risks exceeding 175°C junction temperature.

Does IRFS4227PBF have a specified repetitive avalanche energy rating?

Yes, IRFS4227PBF is rated for repetitive avalanche energy (E_AR) of 62 mJ at T_J = 25°C. This value is measured under standardized unclamped inductive switching conditions (L = 220 nH, C = 0.4 µF, V_GS = 15 V) and confirms its suitability for PDP sustain circuits where inductive energy must be safely absorbed without external protection.

What is the typical gate threshold voltage and how does it vary with temperature?

The typical gate threshold voltage (V_GS(th)) is 4.0 V at T_J = 25°C, with a guaranteed range of 3.0–5.0 V. Its temperature coefficient is −13 mV/°C, meaning V_GS(th) decreases linearly as junction temperature rises-critical for ensuring consistent turn-on behavior across the full −40°C to +175°C operating range.

Can IRFS4227PBF be used in surface-mount reflow assembly processes?

Yes, IRFS4227PBF in D2Pak (TO-263) package is qualified for lead-free reflow soldering per IPC/JEDEC J-STD-020, with peak temperature tolerance up to 260°C for 10 seconds. Its exposed drain pad requires appropriate stencil design and thermal relief to ensure void-free solder joints and optimal thermal transfer to the PCB heatsink area.

IRFS4227PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 62A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 46A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 98 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 4600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS4227PBF FAQ

1.How can I place an order for IRFS4227PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS4227PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS4227PBF reliable?

The price and inventory of IRFS4227PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4227PBF is usually 5 days.

3.What payment methods are accepted for IRFS4227PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4227PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS4227PBF?

IRFS4227PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS4227PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS4227PBF?

For technical support, including IRFS4227PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4227PBF requirements.

6.How does Aetrix verify that IRFS4227PBF is sourced from the original manufacturer or authorized distributors?

All IRFS4227PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4227PBF meets industry standards.

7.What is the process for return or replacement of IRFS4227PBF?

All IRFS4227PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4227PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS4227PBF part is unused and in its original packaging.

Return procedure for IRFS4227PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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