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Infineon Technologies IRFS4228PBF

Part No.:
IRFS4228PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRFS4228PBF.pdf
Description:
MOSFET N-CH 150V 83A D2PAK
Quantity:
Payment:
Payment
Shipping:
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Inventory:4

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Product details

Overview

IRFS4228PBF from Infineon Technologies (formerly International Rectifier) is a 150 V, 170 A, 12 mΩ N-channel D2PAK-3L Power MOSFET optimized for plasma display panel (PDP) sustain, energy recovery, and pass switch circuits. It features low EPULSE rating (≤120 µJ at 100°C), 71 nC total gate charge, and 175°C maximum junction temperature.

For engineers reviewing the IRFS4228PBF datasheet, IRFS4228PBF pinout, IRFS4228PBF application, or IRFS4228PBF equivalent, key selection criteria include avalanche ruggedness (180 V repetitive avalanche voltage), fast switching (tr = 59 ns, tf = 33 ns), body diode performance (trr = 76–110 ns, Qrr = 230–350 nC), and thermal robustness (RθJC = 0.45°C/W).

Technical Context

This MOSFET employs advanced HEXFET® process technology with optimized charge distribution for high-repetition-rate PDP sustain discharge control. Its low RDS(on) and low QG enable efficient high-frequency switching in resonant energy recovery topologies where precise pulse energy control is critical.

The device integrates a robust intrinsic body diode with controlled reverse recovery (Qrr ≤ 350 nC) and supports unclamped inductive switching up to 180 V avalanche voltage. Thermal design is enabled by its low junction-to-case resistance and validated 1000-cycle temperature cycling endurance (−55°C to +150°C).

Key Specifications

ParameterValue and Actual Design Meaning
VDS (min)150 V - Withstands sustained drain-source voltage up to rated breakdown without conduction.
RDS(on) (typ @ 10 V)12 mΩ - Enables <1.2 W conduction loss at 100 A, critical for high-current PDP sustain stages.
ID (cont @ TC=100°C)170 A - Sustains full-rated current at elevated case temperatures common in compact PDP power modules.
Qg (typ)71 nC - Reduces gate drive power and enables fast turn-on (<18 ns delay) in high-duty-cycle applications.
EPULSE (max @ TC=100°C)120 µJ - Limits single-pulse energy dissipation during transient overloads, improving reliability in energy recovery circuits.
TJ (max)175°C - Supports operation in thermally constrained PDP chassis environments without derating.
tr / tf59 ns / 33 ns - Enables sub-100 ns switching transitions essential for >200 kHz sustain frequency operation.

Pinout & Package

IRFS4228PBF is housed in a surface-mount D2PAK-3L (TO-263-3) package with isolated heatsink tab. The package provides low thermal resistance (RθJC = 0.45°C/W) and mechanical robustness for high-power switching modules.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control inputReceives 10 V logic-level drive to fully enhance channel; threshold voltage 3.0–5.0 V ensures noise margin in noisy PDP environments.
D (Drain)High-side power outputConnected to PDP sustain bus; rated for 150 V DC and 180 V repetitive avalanche during flyback recovery.
S (Source)Power return / referenceServes as common return for gate drive and load current; internal source inductance (7.5 nH) impacts di/dt-induced voltage spikes.

Key Features

FeatureDesign Value
Low EPULSE rating≤120 µJ at 100°C - Minimizes localized die heating during repetitive energy recovery pulses, extending lifetime in PDP sustain drivers.
Repetitive avalanche capabilityRated 180 V, 170 A - Allows safe operation under unclamped inductive switching conditions without external snubbers in resonant topologies.
Fast body diode recoverytrr = 76–110 ns, Qrr = 230–350 nC - Reduces commutation losses and EMI in bidirectional energy transfer paths of PDP sustain circuits.
High-temperature ruggedness175°C TJ max + 0.65°C/W end-of-life RθJC - Maintains stable on-resistance and gate threshold across extended thermal cycles in sealed display enclosures.

Applications

PDP Sustain DriverEnergy Recovery Circuit

Use Scenario: Driving sustain electrodes in plasma display panels to maintain pixel illumination through high-frequency AC discharge.

IC Role / Device Role / Timing Role: High-current, high-voltage switching element controlling 150–200 kHz sustain pulses with precise energy per pulse.

Use Value: Low RDS(on) and low EPULSE reduce thermal stress and improve luminance stability over display lifetime.

Use Scenario: Recovering and recycling inductive energy from sustain transformer windings during each half-cycle.

IC Role / Device Role / Timing Role: Bidirectional switch enabling resonant energy transfer between sustain bus and recovery capacitor banks.

Use Value: Fast trr/Qrr and avalanche rating eliminate need for external freewheeling diodes and snubbers, reducing BOM count.

Pass Switch for HV BusIndustrial Resonant Inverter

Use Scenario: Isolating or connecting high-voltage DC bus segments in modular PDP power supplies.

IC Role / Device Role / Timing Role: Low-loss series pass element handling up to 170 A continuous current at 150 V.

Use Value: 12 mΩ RDS(on) limits conduction loss to <200 W at full load, enabling air-cooled designs.

Use Scenario: High-efficiency resonant DC-AC conversion in industrial induction heating and ultrasonic generators.

IC Role / Device Role / Timing Role: Primary-side switching device operating at 100–500 kHz with hard-switched and soft-switched modes.

Use Value: 175°C junction rating and 0.45°C/W RθJC support high-power density layouts without forced cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STW90NF20200 V VDS, 90 A ID, 20 mΩ RDS(on), TO-247 packageHigher voltage margin but lower current rating and higher on-resistance; requires larger heatsink areaPreferred when system voltage exceeds 160 V but peak current stays below 90 A
IXFH170N15T2150 V VDS, 170 A ID, 11.5 mΩ RDS(on), TO-247-3 packageLower RDS(on) and faster Qgd, but no specified EPULSE rating or PDP-optimized avalanche testingSelected for general-purpose 150 V inverters where PDP-specific energy pulse validation is not required

Compared with STW90NF20 and IXFH170N15T2, IRFS4228PBF uniquely combines PDP-validated EPULSE performance, low-Qg timing control, and D2PAK thermal efficiency-making it irreplaceable in space-constrained, high-repetition sustain driver modules.

Availability

IRFS4228PBF is available at Aetrix Electronics and suitable for plasma display panel sustain drivers, energy recovery circuits, and high-current pass switch applications requiring stable component supply and long-term industrial availability.

Supply support for IRFS4228PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in high-voltage discrete devices.

The IRFS4228PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-frequency switching in plasma display and resonant power conversion systems.

FAQ

What is the maximum recommended gate drive voltage for IRFS4228PBF?

The absolute maximum gate-to-source voltage is ±30 V, but the device is characterized and optimized for 10 V enhancement. Driving above 15 V yields diminishing RDS(on) improvement while increasing gate oxide stress and risk of parasitic turn-on in high-dV/dt environments typical of PDP sustain circuits.

Does IRFS4228PBF require a gate resistor for reliable operation?

Yes - a 2.5 Ω gate resistor is specified in the datasheet for switching time characterization and EMI control. This value balances turn-on speed (reducing conduction loss) against shoot-through risk and gate oscillation, especially when driving in parallel or with high di/dt loads like PDP sustain transformers.

Can IRFS4228PBF be used in synchronous rectification applications?

No - its body diode is optimized for unidirectional recovery in PDP sustain, not for bidirectional conduction. Reverse recovery parameters (Qrr, trr) are not characterized for synchronous rectifier duty, and its SOA does not guarantee safe operation under reverse-biased gate conditions required in SR topologies.

Is the D2PAK-3L package lead-free and RoHS compliant?

Yes - the "PbF" suffix confirms lead-free termination and full compliance with RoHS Directive 2011/65/EU. The package uses matte tin plating over copper leads and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) for standard PCB assembly processes.

IRFS4228PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
150 V
Current - Continuous Drain (Id) @ 25°C:
83A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
15mOhm @ 33A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
107 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
4530 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
330W (Tc)
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRFS4228PBF FAQ

1.How can I place an order for IRFS4228PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS4228PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS4228PBF reliable?

The price and inventory of IRFS4228PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4228PBF is usually 5 days.

3.What payment methods are accepted for IRFS4228PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4228PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS4228PBF?

IRFS4228PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS4228PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS4228PBF?

For technical support, including IRFS4228PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4228PBF requirements.

6.How does Aetrix verify that IRFS4228PBF is sourced from the original manufacturer or authorized distributors?

All IRFS4228PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4228PBF meets industry standards.

7.What is the process for return or replacement of IRFS4228PBF?

All IRFS4228PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4228PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS4228PBF part is unused and in its original packaging.

Return procedure for IRFS4228PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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