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Infineon Technologies IRFS4229PBF
- Part No.:
- IRFS4229PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFS4229PBF.pdf
- Description:
- MOSFET N-CH 250V 45A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,680
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Product details
Overview
IRFS4229PBF from Infineon Technologies (formerly International Rectifier) is a 250 V, 91 A (TC = 100°C), D2PAK-packaged N-channel enhancement-mode Power MOSFET optimized for plasma display panel (PDP) sustain, energy recovery, and pass-switch circuits. It features 42 mΩ RDS(on) @ 10 V, 72 nC total gate charge, and 175°C maximum junction temperature.
For engineers reviewing the IRFS4229PBF datasheet, IRFS4229PBF pinout, IRFS4229PBF application, or IRFS4229PBF equivalent, key selection criteria include avalanche ruggedness (300 V repetitive), low EPULSE rating for high-repetition switching, fast switching times (tr = 31 ns, tf = 21 ns), and thermal robustness in high-power PDP sustain stages.
Technical Context
This HEXFET® device uses advanced trench-gate process technology to achieve low RDS(on) and high current density while maintaining strong unclamped inductive switching (UIS) capability. Its 300 V avalanche rating and 33 mJ single-pulse EAS support reliable operation under transient overvoltage conditions common in PDP energy recovery loops.
The MOSFET integrates a fast, low-loss body diode with trr = 190–290 ns and Qrr = 840–1260 nC, enabling efficient freewheeling in resonant topologies. Its 0.45°C/W typical RθJC ensures effective heat transfer to heatsinks in high-duty-cycle applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (min) | 250 V - Withstands DC bus voltages up to 250 V in PDP sustain circuits without breakdown. |
| RDS(on) (typ @ 10 V) | 42 mΩ - Enables <1.1 W conduction loss at 50 A drain current, critical for thermal management in compact PDP modules. |
| ID @ TC = 100°C | 91 A - Sustains continuous high-current drive required for PDP cell sustain pulses without derating. |
| Qg (typ) | 72 nC - Supports fast turn-on with moderate gate drive power, reducing switching losses in 200–500 kHz PDP sustain waveforms. |
| EPULSE (max @ 25°C) | 1600 µJ - Limits per-pulse energy dissipation during short-circuit or overload events in pass-switch configurations. |
| tr/tf | 31 ns / 21 ns - Enables clean edge transitions in high-frequency sustain drivers, minimizing cross-conduction and EMI. |
| TJ (max) | 175°C - Allows operation in thermally constrained PDP chassis environments with minimal margin loss over lifetime. |
Pinout & Package
IRFS4229PBF is housed in a surface-mount D2PAK (TO-263) package with exposed drain pad for enhanced thermal performance. The package measures 10.16 × 15.37 mm and is RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current path output terminal | Connected to PCB copper pour for low-inductance, high-current return path and thermal sinking. |
| Source (S) | Reference node for gate drive and current sensing | Provides low-impedance return for gate driver loop and enables accurate shunt-based current monitoring. |
| Gate (G) | Control input for channel conduction | Requires <5 V threshold activation; sensitive to ringing-requires local RC snubbing and tight layout. |
Key Features
| Feature | Design Value |
|---|---|
| Optimized for PDP sustain/energy recovery | Low EPULSE and high IRP (300 A) enable repeated high-energy pulse handling without degradation. |
| Repetitive avalanche rated | 300 V VDS(Avalanche) supports safe operation during inductive flyback without external clamping. |
| High-temperature ruggedness | 175°C TJ(max) and stable RDS(on) vs. temperature ensure long-term reliability in sealed PDP enclosures. |
| Fast body diode | trr = 190–290 ns and Qrr = 840–1260 nC reduce reverse recovery losses in resonant energy recovery paths. |
Applications
| Plasma Display Panel (PDP) Sustain Circuit | PDP Energy Recovery Switch |
|---|---|
Use Scenario: Driving row/column electrodes in AC plasma displays to maintain pixel illumination during sustain phase. IC Role / Device Role / Timing Role: High-current, high-voltage switch toggling at 200–500 kHz to generate sustain pulses across plasma cells. Use Value: Low RDS(on) and fast switching minimize conduction and switching losses, extending module lifetime and reducing cooling requirements. |
Use Scenario: Recovering inductive energy stored in sustain transformers and feeding it back into the DC bus. IC Role / Device Role / Timing Role: Bidirectional energy transfer switch operating in resonant half-bridge configuration with body diode conduction. Use Value: Low Qrr and soft-recovery body diode reduce voltage overshoot and EMI, improving system efficiency by >3% versus standard MOSFETs. |
| PDP Pass-Switch Module | Industrial Resonant DC-DC Converter |
Use Scenario: Bypassing or routing high-current sustain waveforms between multiple PDP submodules. IC Role / Device Role / Timing Role: Low-loss, high-current pass transistor activated during specific timing windows to isolate or interconnect sustain sections. Use Value: 91 A continuous rating at 100°C case temperature allows compact, fanless designs without forced air cooling. |
Use Scenario: Primary-side switch in ZVS/ZCS resonant converters for industrial power supplies and LED drivers. IC Role / Device Role / Timing Role: Hard- and soft-switched power switch handling 200–300 V DC input with high peak currents. Use Value: Repetitive avalanche capability eliminates need for external snubbers, simplifying board layout and reducing BOM count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage, high-current power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW20NK50Z | 500 V VDS, 20 A ID, TO-247 package, higher RDS(on) (0.25 Ω) | Lower current rating and larger footprint limit use in high-density PDP sustain boards. | Preferred where higher voltage margin (>400 V) is needed but peak current remains ≤20 A. |
| IXFH30N25X3 | 250 V VDS, 30 A ID, TO-247, lower Qg (45 nC), no specified EPULSE | Lacks documented EPULSE rating and avalanche endurance data for PDP energy recovery duty cycles. | Suitable for general-purpose 250 V switching where avalanche stress is absent and gate drive power is critical. |
Compared with STW20NK50Z and IXFH30N25X3, IRFS4229PBF uniquely combines 91 A current capability, low EPULSE, and validated repetitive avalanche performance-making it the only option qualified for full-cycle PDP sustain and energy recovery in production-grade modules.
Availability
IRFS4229PBF is available at Aetrix Electronics and suitable for plasma display panel sustain circuits, PDP energy recovery systems, and industrial resonant DC-DC converters requiring stable component supply and long-term lifecycle support.
Supply support for IRFS4229PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in high-reliability discrete power devices.
IRFS4229PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-ruggedness switching in plasma display and industrial resonant power conversion systems.
FAQ
Is IRFS4229PBF suitable for hard-switched 250 V DC-DC converters?
Yes-its 250 V VDS rating, 42 mΩ RDS(on), and 175°C TJ(max) support continuous hard-switching at up to 91 A with proper heatsinking. However, its 72 nC Qg requires robust gate drive capable of delivering ≥2 A peak current to achieve sub-50 ns switching transitions.
Does IRFS4229PBF have a fully characterized body diode for synchronous rectification?
No-it is not designed for synchronous rectification. Its body diode has trr = 190–290 ns and Qrr = 840–1260 nC, which are optimized for PDP energy recovery freewheeling-not low-loss rectification. Dedicated synchronous rectifiers or Schottky-assisted topologies are recommended for rectification roles.
What is the maximum allowable gate-source voltage for reliable operation?
The absolute maximum VGS is ±30 V, but reliable long-term operation requires limiting VGS to ≤20 V. Gate oxide integrity degrades above 20 V, and datasheet characterization (e.g., Qg, RDS(on)) is specified up to 20 V. A 15 V gate drive with active clamping is recommended for PDP applications.
Can IRFS4229PBF be used in parallel configurations for higher current?
Yes-its positive RDS(on) temperature coefficient (RDS(on) increases with temperature) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink to prevent thermal runaway. Derate total current by 15% for 2× parallel use.
IRFS4229PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 48mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4560 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 330W (Tc)
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRFS4229PBF FAQ
1.How can I place an order for IRFS4229PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFS4229PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFS4229PBF reliable?
The price and inventory of IRFS4229PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4229PBF is usually 5 days.
3.What payment methods are accepted for IRFS4229PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4229PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFS4229PBF?
IRFS4229PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFS4229PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFS4229PBF?
For technical support, including IRFS4229PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4229PBF requirements.
6.How does Aetrix verify that IRFS4229PBF is sourced from the original manufacturer or authorized distributors?
All IRFS4229PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4229PBF meets industry standards.
7.What is the process for return or replacement of IRFS4229PBF?
All IRFS4229PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4229PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFS4229PBF part is unused and in its original packaging.
Return procedure for IRFS4229PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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