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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS4310PBF

Name: IRFS4310PBF
Brand: Infineon Technologies
SKU: IRFS4310PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS4310PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS4310PBF.pdf

Description:: MOSFET N-CH 100V 130A D2PAK

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Product details

Overview

IRFS4310PBF from Infineon (formerly International Rectifier) is a 100V, 130A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency hard-switching and synchronous rectification. It features 5.6 mΩ typical R_DS(on), 170 nC total gate charge, 45 ns typical reverse recovery time (t_rr), and enhanced body diode dV/dt/dI/dt ruggedness - enabling use in high-efficiency SMPS and UPS output stages.

For engineers reviewing the IRFS4310PBF datasheet, IRFS4310PBF pinout, IRFS4310PBF application, or IRFS4310PBF equivalent, key selection criteria include its 100V V_DSS, low 0.50 °C/W R_θJC, 75A avalanche current rating (I_AR), and validated unclamped inductive switching (UIS) capability up to 2000 mJ at T_J = 25°C.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted body diode design to achieve simultaneous low R_DS(on) and fast, soft reverse recovery (Q_rr = 82–120 nC). Its gate threshold voltage (V_GS(th)) ranges 2.0–4.0 V, supporting standard 10 V gate drive while maintaining noise immunity.

The device is characterized for linear SOA operation up to 100 µs pulses and exhibits thermally limited single-pulse avalanche energy (E_AS) of 2000 mJ at T_J = 25°C, with derating to 400 mJ at T_J = 175°C. C_{oss eff.(TR)} = 720.1 pF ensures predictable turn-off timing in resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; sets upper limit for DC bus or flyback clamp applications.
R_DS(on) typ.	5.6 mΩ @ V_GS = 10 V, T_J = 25°C - Enables <1.5 W conduction loss at 75 A, critical for high-current synchronous rectifiers.
Q_g	170 nC max - Determines gate driver power requirement and switching speed; impacts efficiency in >100 kHz SMPS designs.
t_rr	45 ns typ. @ T_J = 25°C - Reduces diode recovery losses and EMI in hard-switched converters using body diode commutation.
E_AS	2000 mJ @ T_J = 25°C - Supports robust unclamped inductive switching without external snubbers in UPS and motor drive fault conditions.
R_θJC	0.50 °C/W - Allows 130 A continuous operation with ≤65°C case-to-ambient rise when heatsinked; defines thermal interface requirements.
I_D @ T_C = 100°C	92 A - Real-world continuous current limit under industrial ambient conditions; governs PCB copper area and heatsink sizing.

Pinout & Package

IRFS4310PBF uses the TO-220AB package (3-lead, through-hole, isolated tab), with drain connected to the metal tab for direct heatsinking. The package has 0.50 °C/W junction-to-case thermal resistance and is not recommended for surface-mount assembly.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load return	Electrically and thermally connected to metal tab; requires insulating washer if mounted to grounded heatsink.
Source	Reference node for gate drive and current sensing	Low-inductance connection point for Kelvin source routing in high-di/dt applications; ties to power ground plane.
Gate	Control terminal for channel modulation	High-impedance input requiring <250 nC charge; sensitive to ringing - needs local RC snubber or gate resistor ≥2.6 Ω.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	Rated for >2.0 V/ns during diode recovery - prevents spurious turn-on in high-dV/dt synchronous rectifier nodes.
Full UIS SOA characterization	Validated up to 75 A I_AS, 0.35 mH L, 25 Ω R_G - enables reliable operation in unclamped inductive loads without external protection.
C_{oss eff.(ER)} = 650 pF	Energy-equivalent output capacitance used for ZVS transition loss calculation in LLC and phase-shifted full-bridge converters.
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 reflow profile; compatible with Pb-free assembly processes up to 260°C peak temperature.
Improved gate oxide ruggedness	Withstands >1000 V/ns transient dV/dt on drain without gate punch-through - critical for half-bridge high-side switching.

Applications

Server VRM Output Stage

UPS Inverter Half-Bridge

Use Scenario: High-current, high-efficiency buck converter delivering 12 V/200 A to CPU cores in datacenter servers.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 500 kHz with forced continuous conduction mode (FCCM).

Use Value: 5.6 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 8 mΩ devices, lowering thermal load on 6-layer PCB with 2 oz copper.

Use Scenario: 1 kVA online UPS inverter stage converting 380 V DC bus to 230 V AC with bidirectional energy flow.

IC Role / Device Role / Timing Role: Low-side switch in hard-switched H-bridge, handling 130 A peak output current with 100 ns dead-time.

Use Value: 45 ns t_rr minimizes shoot-through risk during commutation, enabling tighter dead-time control and higher THD margin.

Industrial Motor Drive Brake Circuit

Telecom Rectifier Module

Use Scenario: Regenerative braking circuit dissipating 5 kW for 200 ms in servo amplifier during emergency stop.

IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing stored motor energy via body diode conduction and avalanche.

Use Value: 2000 mJ E_AS rating allows single-pulse energy absorption without external TVS, simplifying BOM and layout.

Use Scenario: 48 V telecom rectifier module converting -48 V DC input to 12 V intermediate bus for base station radios.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in forward converter operating at 250 kHz with 100% duty cycle capability.

Use Value: 0.50 °C/W R_θJC enables 130 A conduction with <45°C case rise on compact extruded heatsink, meeting NEBS GR-63 thermal compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N10F7	100 V, 130 A, R_DS(on) = 5.0 mΩ typ., Q_g = 145 nC, TO-220FP package (non-isolated tab)	Lacks full UIS characterization; lower gate charge improves switching efficiency but reduces avalanche margin	Preferred where gate drive loss dominates and avalanche stress is minimal (e.g., isolated DC/DC secondary side)
IXFH130N10P	100 V, 130 A, R_DS(on) = 6.2 mΩ typ., Q_g = 185 nC, TO-247AC package, fully rated for repetitive avalanche	Higher R_DS(on) increases conduction loss but superior thermal cycling reliability in high-T_A environments	Chosen for mission-critical industrial drives requiring >100,000-cycle lifetime under repeated short-circuit events

Compared with STL130N10F7 and IXFH130N10P, IRFS4310PBF offers the best balance of low R_DS(on), proven UIS robustness, and TO-220AB mechanical compatibility - making it optimal for cost-sensitive, high-volume SMPS where both efficiency and fault tolerance matter.

Availability

IRFS4310PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and hard-switched motor drive circuits requiring stable component supply across multi-year production cycles.

Supply support for IRFS4310PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with core expertise in silicon and wide-bandgap technologies.

IRFS4310PBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-current, high-frequency power conversion systems demanding low conduction loss, fast switching, and rugged unclamped inductive switching performance.

FAQ

Is IRFS4310PBF suitable for surface-mount assembly?

No. The TO-220AB package is explicitly not recommended for surface-mount applications per Infineon's datasheet (page 8). Its leadframe geometry and thermal pad design require through-hole mounting with mechanical screw torque of 10 lb·in (1.1 N·m) for reliable thermal contact and mechanical stability.

What is the maximum allowable gate-source voltage for IRFS4310PBF?

The absolute maximum V_GS is ±20 V, but the device is characterized and guaranteed for operation between –20 V and +20 V. Continuous operation above +15 V or below –10 V risks gate oxide degradation; standard 10 V gate drive is recommended for optimal R_DS(on) and reliability trade-off.

Does IRFS4310PBF have a fully characterized safe operating area (SOA) for linear mode operation?

Yes. Figure 8 in the official datasheet provides the maximum safe operating area for DC, pulsed, and linear-mode operation up to 100 µs, including limits defined by R_DS(on), package thermal resistance, and second breakdown. Linear operation is restricted to V_DS < 30 V and I_D < 40 A at T_C = 25°C.

Can IRFS4310PBF be paralleled with identical units without external gate resistors?

No. Due to parametric variation in V_GS(th) (2.0–4.0 V) and dynamic characteristics, individual gate resistors (≥2.6 Ω) are required for each device to ensure current sharing. Layout symmetry and Kelvin source connections are mandatory to avoid thermal runaway in parallel configurations.

IRFS4310PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 130A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 250 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7670 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS4310PBF FAQ

1.How can I place an order for IRFS4310PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS4310PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS4310PBF reliable?

The price and inventory of IRFS4310PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4310PBF is usually 5 days.

3.What payment methods are accepted for IRFS4310PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4310PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS4310PBF?

IRFS4310PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS4310PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS4310PBF?

For technical support, including IRFS4310PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4310PBF requirements.

6.How does Aetrix verify that IRFS4310PBF is sourced from the original manufacturer or authorized distributors?

All IRFS4310PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4310PBF meets industry standards.

7.What is the process for return or replacement of IRFS4310PBF?

All IRFS4310PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4310PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS4310PBF part is unused and in its original packaging.

Return procedure for IRFS4310PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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