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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS4310TRRPBF

Name: IRFS4310TRRPBF
Brand: Infineon Technologies
SKU: IRFS4310TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS4310TRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS4310TRRPBF.pdf

Description:: MOSFET N-CH 100V 130A D2PAK

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Product details

Overview

IRFS4310TRRPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 130A N-channel enhancement-mode HEXFET Power MOSFET in D2Pak (TO-263) package, optimized for high-frequency hard-switched and synchronous rectification applications. It features 5.6 mΩ typical R_DS(on), 170 nC total gate charge, 45 ns typical reverse recovery time (t_rr), and enhanced body diode dV/dt and dI/dt ruggedness - enabling reliable operation in SMPS secondary-side rectification and UPS output stages.

For engineers reviewing the IRFS4310TRRPBF datasheet, IRFS4310TRRPBF pinout, IRFS4310TRRPBF application, or IRFS4310TRRPBF equivalent, key selection criteria include its 100V V_DS rating, low 5.6 mΩ on-resistance at 10V V_GS, 130A continuous drain current capability, robust unclamped inductive switching (UIS) performance (E_AS = 980 mJ), and fast body diode recovery (Q_rr = 82–120 nC).

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted charge balancing to achieve low R_DS(on) while maintaining high avalanche energy tolerance. Its dynamic parameters - including C_iss = 7670 pF, C_oss(eff, TR) = 720.1 pF, and Q_gd/Q_gs ratio of ~1.35 - support stable high-speed switching up to several hundred kHz in resonant and phase-shifted topologies.

The integrated body diode is characterized for hard commutation: t_rr = 45–68 ns (T_J = 25°C), I_RRM = 3.3 A, and di/dt capability up to 550 A/µs under specified conditions. Thermal design is enabled by R_θJC = 0.50 °C/W and R_θJA = 40 °C/W (PCB mount), supporting high-power density implementations without forced air cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for primary-side switch or secondary-side synchronous rectifier in 48V–60V bus systems.
R_DS(on) typ.	5.6 mΩ @ V_GS = 10 V, T_J = 25°C - Enables <1.5 W conduction loss at 75 A, critical for >95% efficiency in high-current SMPS outputs.
I_D cont.	130 A @ T_C = 25°C - Supports high-current power delivery in UPS inverters and motor drive half-bridges with minimal paralleling.
Q_g	170 nC max - Determines gate driver power requirement; compatible with standard 2–4 A peak gate drivers for ≤500 kHz switching.
t_rr	45 ns typ. @ T_J = 25°C - Minimizes dead-time losses and shoot-through risk in synchronous rectification when paired with precise timing control.
E_AS	980 mJ single-pulse - Allows safe operation under unclamped inductive switching events (e.g., transformer leakage energy) without external snubbers.
R_θJC	0.50 °C/W - Enables direct heatsink mounting with low thermal resistance; supports >100 W continuous dissipation with modest heatsinking.

Pinout & Package

D2Pak (TO-263) surface-mount package with isolated tab (drain-connected). Standard 3-pin layout optimized for high-current PCB routing and thermal transfer via exposed copper pad.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Connected to power ground or low-side switch node; carries full load current and must be routed with wide copper pour.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring low-inductance connection to driver; sensitive to ringing due to Q_gd = 62 nC.
Pin 3 (Drain)	High-side power terminal	Internally connected to metal tab; electrically and thermally coupled to heatsink - requires isolation if heatsink is grounded.

Key Features

Feature	Design Value
Enhanced body diode dV/dt ruggedness	Rated for 2.0 V/ns per datasheet test condition - prevents spurious turn-on during high dv/dt transients in bridge-leg configurations.
Full UIS characterization	E_AS = 980 mJ, I_AR = 75 A - Eliminates need for external avalanche protection in flyback or LLC resonant converters.
Low C_oss(eff, ER)	650 pF - Reduces capacitive switching loss during zero-voltage switching (ZVS) transitions in phase-shifted full-bridge designs.
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 reflow profile - supports automated SMT assembly without lead contamination concerns.
Thermally robust SOA	Linear derating factor 0.83 W/°C above 25°C case temperature - enables predictable power handling across industrial ambient ranges (−40°C to +100°C).

Applications

Server PSU Synchronous Rectification

Industrial UPS Inverter Stage

Use Scenario: Secondary-side rectification in 48V-output, 1–3 kW server power supplies using synchronous topology.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven with precise gate timing aligned to transformer secondary voltage polarity.

Use Value: Reduces conduction loss by >60% vs. 100V Schottky, improving full-load efficiency from 93% to ≥95.5% and lowering thermal stress on PCB.

Use Scenario: High-current H-bridge output stage in 3-phase 10–20 kVA uninterruptible power supplies.

IC Role / Device Role / Timing Role: High-current switching device in leg configuration; handles bidirectional current flow during battery backup mode.

Use Value: Withstands repetitive 550 A pulsed source current (I_SM) and 130 A continuous drain current, enabling compact inverter design without paralleling.

Hard-Switched DC-DC Converters

High-Frequency Motor Drive Half-Bridge

Use Scenario: Primary-side switch in 200–500 kHz isolated forward or active-clamp forward converters for telecom rectifiers.

IC Role / Device Role / Timing Role: Fast-turning main power switch; leverages low Q_gd/Q_gs ratio to minimize Miller-induced delay and improve duty-cycle fidelity.

Use Value: 68 ns t_d(off) and 78 ns t_f enable clean turn-off with minimal overlap loss, sustaining >92% efficiency at 300 kHz.

Use Scenario: Upper/lower switch in 20–40 kHz three-phase BLDC motor drives for HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: High-current, high-ruggedness switching element subjected to inductive kickback and regenerative braking currents.

Use Value: Body diode dI/dt capability of 550 A/µs and 120 ns t_rr at 125°C ensures reliable freewheeling without external diodes or snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N10F7	R_DS(on) = 5.0 mΩ typ., Q_g = 145 nC, DFN8 5×6 mm package (no isolated tab)	Lower gate charge improves switching efficiency but lacks isolated drain tab - requires insulated heatsink or PCB isolation.	Preferred where board space is constrained and thermal interface can be managed without mechanical isolation.
IXFH130N10P	R_DS(on) = 6.2 mΩ typ., TO-247 package, E_AS = 720 mJ, higher R_θJC = 0.65 °C/W	Higher thermal resistance and lower avalanche rating limit use in high-reliability, high-dV/dt environments like medical UPS.	Selected when legacy TO-247 footprint compatibility is required and peak avalanche stress is below 700 mJ.

Compared with STL130N10F7 and IXFH130N10P, IRFS4310TRRPBF offers superior avalanche robustness (980 mJ vs. ≤720 mJ), an isolated drain tab for simplified heatsinking, and proven dV/dt immunity - making it preferred for mission-critical SMPS and UPS where reliability under transient overload is non-negotiable.

Availability

IRFS4310TRRPBF is available at Aetrix Electronics and suitable for high-efficiency server PSUs, industrial UPS inverters, and hard-switched DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IRFS4310TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to Infineon's legacy HEXFET Power MOSFET product line, designed specifically for high-current, high-ruggedness switching in industrial power conversion, UPS, and motor control - emphasizing avalanche survivability, body diode performance, and thermal reliability over raw speed.

FAQ

What is the maximum continuous drain current for IRFS4310TRRPBF at 100°C case temperature?

The maximum continuous drain current is 92 A at T_C = 100°C and V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2Pak package and ensures junction temperature remains ≤175°C under steady-state conduction with proper heatsinking.

Does IRFS4310TRRPBF have a fully characterized reverse recovery charge (Q_rr)?

Yes - Q_rr is fully characterized across temperature: 82–120 nC at T_J = 25°C and 120–180 nC at T_J = 125°C, measured at I_F = 75 A, dI/dt = 100 A/µs, and V_R = 85 V. These values are validated per JEDEC standards and published in Figure 20 of the official datasheet.

Can IRFS4310TRRPBF be used in surface-mount applications without mechanical reinforcement?

Yes - unlike TO-220AB variants, the IRFS4310TRRPBF uses the D2Pak (TO-263) package explicitly qualified for surface-mount assembly. Its leadframe design and solderable exposed drain pad support IPC-A-610 Class 2/3 compliance when using recommended footprint and reflow profiles per Application Note AN-994.

Is the gate threshold voltage (V_GS(th)) stable across temperature?

V_GS(th) decreases linearly with rising temperature: from 4.0 V at −55°C to 2.0 V at 175°C (typical), with a temperature coefficient of −4.5 mV/°C. This behavior is documented in Figure 16 and must be accounted for in gate drive design to avoid unintended turn-on near T_Jmax.

IRFS4310TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 130A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 250 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7670 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS4310TRRPBF FAQ

1.How can I place an order for IRFS4310TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS4310TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS4310TRRPBF reliable?

The price and inventory of IRFS4310TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4310TRRPBF is usually 5 days.

3.What payment methods are accepted for IRFS4310TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4310TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS4310TRRPBF?

IRFS4310TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS4310TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS4310TRRPBF?

For technical support, including IRFS4310TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4310TRRPBF requirements.

6.How does Aetrix verify that IRFS4310TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFS4310TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4310TRRPBF meets industry standards.

7.What is the process for return or replacement of IRFS4310TRRPBF?

All IRFS4310TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4310TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS4310TRRPBF part is unused and in its original packaging.

Return procedure for IRFS4310TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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