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Infineon Technologies IRFS4321-7PPBF
- Part No.:
- IRFS4321-7PPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-7, D2PAK (6 Leads + Tab)
- Datasheet:
-
IRFS4321-7PPBF.pdf
- Description:
- MOSFET N-CH 150V 86A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,509
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Product details
Overview
IRFS4321-7PPBF from Infineon Technologies (formerly International Rectifier) is a 150V, 86A N-channel enhancement-mode HEXFET® Power MOSFET in D2Pak-7Pin package, optimized for high-frequency hard-switched DC-DC converters and synchronous rectification in SMPS. It features 11.7 mΩ typical RDS(on) at VGS = 10 V, 71 nC total gate charge, and fully characterized avalanche SOA for robust unclamped inductive switching in UPS and motion control systems.
For engineers reviewing the IRFS4321-7PPBF datasheet, IRFS4321-7PPBF pinout, IRFS4321-7PPBF application, or IRFS4321-7PPBF equivalent, key selection criteria include its 0.43 °C/W RθJC, 120 mJ single-pulse avalanche energy, 89 ns typical reverse recovery time, and 30 V gate voltage rating - all critical for thermal management and EMI-sensitive high-efficiency power stages.
Technical Context
This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted body diode design to achieve low Qgd/Qg ratio (21/71 nC), enabling fast, low-loss switching in 100–500 kHz SMPS topologies. Its 150 V VDS rating supports 48 V and 60 V bus architectures with margin for transient overvoltage.
The device integrates a low-VSD (1.3 V @ 50 A, TJ = 25°C) body diode with controlled reverse recovery (Qrr = 300–450 nC), reducing commutation losses and dv/dt-induced shoot-through risk in synchronous buck and LLC resonant converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - Supports 48 V input systems with ≥2× transient margin for industrial UPS and motor drives |
| RDS(on) typ. | 11.7 mΩ @ VGS = 10 V - Enables <1.2 W conduction loss at 86 A continuous drain current |
| Qg | 71 nC - Reduces gate drive power requirement and improves switching speed in high-frequency operation |
| EAS | 120 mJ - Allows safe unclamped inductive switching up to 50 A without external snubbers |
| trr | 89 ns - Limits diode reverse recovery overshoot and EMI generation during synchronous rectification |
| RθJC | 0.43 °C/W - Enables >300 W power dissipation with moderate heatsinking in D2Pak-7Pin form factor |
| VGS | ±30 V - Provides robustness against gate transients in noisy industrial environments |
Pinout & Package
D2Pak-7Pin (TO-263-7L) thermally enhanced surface-mount package with isolated tab, 3.3 mm height, and 10.67 × 15.88 mm footprint. Features dual-source terminals and Kelvin source connection for accurate gate drive referencing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal; accepts 10 V logic-level drive; internal RG = 0.8 Ω limits ringing |
| S1 | Source (Main) | Primary current return path; bonded to exposed copper pad for low-inductance layout |
| S2 | Source (Kelvin) | Reference node for gate driver feedback; isolates gate loop from high di/dt source paths |
| D1–D4 | Drain (Parallel) | Four paralleled drain terminals reduce package inductance (<1.5 nH) and improve current sharing |
Key Features
| Feature | Design Value |
|---|---|
| Low Qgd/Qg ratio | 29.6% (21/71 nC) - Minimizes Miller plateau duration and improves controllability during turn-off |
| Fully characterized avalanche SOA | 120 mJ single-pulse, thermally limited - Eliminates need for external clamping in flyback and active clamp circuits |
| Improved diode recovery | Qrr = 300–450 nC, IRRM = 6.5 A - Reduces cross-conduction losses and EMI in synchronous rectifiers |
| Enhanced thermal interface | 0.43 °C/W RθJC - Delivers 350 W PD at TC = 25°C with direct heatsink mounting |
Applications
| Motion Control Inverter Stage | High-Efficiency Server SMPS |
|---|---|
Use Scenario: Three-phase BLDC motor drive operating at 20–40 kHz PWM frequency with 48 V DC bus. IC Role / Device Role / Timing Role: High-side and low-side switching element in inverter half-bridge; handles 86 A peak phase current with <100 ns switching transitions. Use Value: Low RDS(on) and fast tr/tf (60/35 ns) reduce conduction and switching losses by 18% versus legacy 20 mΩ MOSFETs. | Use Scenario: Secondary-side synchronous rectifier in 12 V/100 A VRM for AI accelerator cards. IC Role / Device Role / Timing Role: Body-diode-replacement switch in multiphase buck converter; operates with 500 kHz switching and 100 A average output current. Use Value: 1.3 V VSD and 89 ns trr cut rectifier losses by 32% compared to Schottky solutions at 125°C junction temperature. |
| Industrial UPS Output Stage | Hard-Switched Telecom Rectifier |
Use Scenario: 3 kVA online UPS inverter stage with bidirectional energy flow and 150 V DC link. IC Role / Device Role / Timing Role: Unclamped inductive switching device handling 343 A pulsed drain current during battery backup mode. Use Value: 120 mJ EAS and 150 V VDS enable reliable operation without snubber networks, reducing BOM count by 4 components per phase. | Use Scenario: Primary-side switch in 3.3 kW telecom rectifier using phase-shifted full-bridge topology at 200 kHz. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-assisted main switch; withstands 128 V VDD with 100 A peak current. Use Value: 71 nC Qg and low Coss (390 pF) reduce ZVS dead-time requirements and improve light-load efficiency by 2.1%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current 150 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW75N150FD | 150 V, 75 A, RDS(on) = 14.5 mΩ, Qg = 105 nC, TO-247 package | Higher RDS(on) and gate charge increase conduction and drive losses; lacks Kelvin source | Preferred where through-hole mounting and higher avalanche ruggedness (220 mJ) are prioritized over board space and switching speed |
| IXFH70N15X3 | 150 V, 70 A, RDS(on) = 12.5 mΩ, Qg = 62 nC, TO-247-3L | Lower Qg improves switching but no Kelvin source; lower ID rating reduces margin in 86 A designs | Selected when gate drive simplicity and reduced EMI are critical, and peak current remains ≤70 A |
Compared with STW75N150FD and IXFH70N15X3, IRFS4321-7PPBF uniquely combines D2Pak-7Pin's low-inductance layout, Kelvin source for stable gate control, and 86 A current rating - making it optimal for compact, high-density, high-reliability SMPS and motor drive PCBs where thermal performance and diode recovery are decisive.
Availability
IRFS4321-7PPBF is available at Aetrix Electronics and suitable for motion control inverters, high-efficiency server SMPS, and industrial UPS systems requiring stable component supply across multi-year production cycles.
Supply support for IRFS4321-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial motor drives, telecom infrastructure, and renewable energy systems.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRFS4321-7PPBF supports 61 A continuous drain current at TC = 100°C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2Pak-7Pin package and must be validated with actual board-level thermal resistance and heatsink performance.
Does this MOSFET require a negative gate voltage for reliable turn-off?
No - the IRFS4321-7PPBF has a gate threshold voltage range of 3.0–5.0 V and is fully controllable with 0 V to +10 V gate drive. A negative gate bias is not required, though applying –5 V can improve noise immunity in high-dv/dt environments without exceeding the ±30 V VGS rating.
Can the Kelvin source (S2) pin be left unconnected in standard applications?
No - S2 must be connected directly to the gate driver's reference ground to maintain accurate gate-to-source voltage control. Leaving S2 floating introduces measurement error and risks false turn-on due to source inductance voltage drop during high di/dt events, especially in synchronous rectifier configurations.
Is the 120 mJ avalanche energy rating applicable for repetitive operation?
No - the 120 mJ rating is strictly for single-pulse avalanche under defined test conditions (TJ = 25°C, L = 0.096 mH, RG = 25 Ω). Repetitive avalanche requires derating per Figures 14–15 and adherence to thermal limits; Infineon does not recommend sustained repetitive avalanche operation for this part.
IRFS4321-7PPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-7, D2PAK (6 Leads + Tab)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 14.7mOhm @ 34A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4460 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 350W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK (7-Lead)
IRFS4321-7PPBF FAQ
1.How can I place an order for IRFS4321-7PPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFS4321-7PPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFS4321-7PPBF reliable?
The price and inventory of IRFS4321-7PPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4321-7PPBF is usually 5 days.
3.What payment methods are accepted for IRFS4321-7PPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4321-7PPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFS4321-7PPBF?
IRFS4321-7PPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFS4321-7PPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFS4321-7PPBF?
For technical support, including IRFS4321-7PPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4321-7PPBF requirements.
6.How does Aetrix verify that IRFS4321-7PPBF is sourced from the original manufacturer or authorized distributors?
All IRFS4321-7PPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4321-7PPBF meets industry standards.
7.What is the process for return or replacement of IRFS4321-7PPBF?
All IRFS4321-7PPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4321-7PPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFS4321-7PPBF part is unused and in its original packaging.
Return procedure for IRFS4321-7PPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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