Infineon Technologies IRFS4410

Overview

IRFS4410 from Infineon Technologies (formerly International Rectifier) is a 100V, 88A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, featuring 8.0 mΩ typical R_DS(on), 120 nC total gate charge, and enhanced avalanche ruggedness. It serves as a high-current primary-side switch or synchronous rectifier in hard-switched SMPS, UPS inverters, and motor drive half-bridges.

For engineers reviewing the IRFS4410 datasheet, IRFS4410 pinout, IRFS4410 application, or IRFS4410 equivalent, key selection criteria include its 100V V_DS rating, 8.0 mΩ on-resistance at 10V V_GS, 380A pulsed diode current capability, 300 mJ single-pulse avalanche energy, and TO-220AB thermal resistance of 0.61°C/W junction-to-case.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and thick gate oxide to deliver improved dV/dt immunity and body diode recovery robustness. Its dynamic parameters-including 44 nC Miller charge, 5150 pF input capacitance, and 38 ns typical reverse recovery time-support operation up to 500 kHz in resonant and phase-shifted topologies.

The device integrates an intrinsic fast-recovery body diode rated for 58A continuous source current and 380A pulsed current, with Q_rr of 61–92 nC and I_RRM ≤ 2.8 A. Thermal design is anchored by R_θJC = 0.61°C/W and R_θJA = 62°C/W (TO-220), enabling 75A package-limited continuous conduction at T_C = 100°C.

Key Specifications

Pinout & Package

IRFS4410 uses a standard TO-220AB 3-pin through-hole package with drain-connected tab for low-inductance heatsinking. Pin 1 is Gate, Pin 2 is Drain (tab), Pin 3 is Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100V power MOSFET applications.

Compared with STP110N10F7 and IXTH86N10L2, IRFS4410 offers balanced trade-offs: mid-range R_DS(on) and Q_g, proven avalanche capability, and TO-220AB mechanical compatibility-making it optimal for cost-sensitive, thermally constrained industrial SMPS upgrades.

Availability

IRFS4410 is available at Aetrix Electronics and suitable for uninterruptible power supplies, server power supplies, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRFS4410 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The IRFS4410 belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial, computing, and telecom infrastructure.

FAQ

Is IRFS4410 suitable for synchronous rectification in LLC resonant converters?

Yes. With 38 ns reverse recovery time, 61 nC Q_rr, and 1.3 V body diode forward voltage, IRFS4410 reduces conduction and switching losses in secondary-side synchronous rectification. Its 100 V rating provides margin for reflected transients in 48 V output designs, and its 8.0 mΩ R_DS(on) ensures low loss at 50–80 A loads.

What is the maximum safe continuous drain current at 85°C case temperature?

Per the datasheet derating curve (Fig. 9), IRFS4410 supports 75 A continuous drain current at T_C = 85°C. This value is package-limited-not die-limited-and assumes proper heatsinking with flat greased interface (R_θCS = 0.50°C/W). Exceeding 75 A risks solder joint fatigue and thermal runaway.

Does IRFS4410 require a negative gate voltage for reliable turn-off in high-dv/dt environments?

No. The device has a gate threshold voltage range of 2.0–4.0 V and exhibits no significant Miller-induced false turn-on below V_GS = 0 V. Its Crss/Ciss ratio of 3.7% and specified dv/dt immunity (>5 V/ns) allow robust operation with 0 V to 10 V gate drive in hard-switched topologies without negative bias.

Can IRFS4410 be used in parallel configurations, and what layout considerations apply?

Yes-IRFS4410 is designed for paralleling. Key requirements include matched gate drive impedance (<2 Ω per device), symmetrical PCB trace lengths to minimize loop inductance, Kelvin-source routing to eliminate source inductance imbalance, and thermal coupling via shared heatsink to ensure current sharing within ±10% across devices at 80 A total load.